A monolithically integrated optoelectronic receiver is presented. A silicon-based photo-diode and receiver circuits are integrated on identical substrates in order to eliminate the parasitics induced by hybrid packagi...A monolithically integrated optoelectronic receiver is presented. A silicon-based photo-diode and receiver circuits are integrated on identical substrates in order to eliminate the parasitics induced by hybrid packaging. Implemented in the present deep sub-micron MS/RF （mixed signal, radio frequency） CMOS,this monolithically OEIC takes advantage of several new features to improve the performance of the photo-diode and eventually the whole OEIC.展开更多
We aimed to develop a process technology for constructing a carbon-based micro-electromechanical system that does not require a high-temperature and high-energy process. A HOPG （highly oriented pyrolytic graphite） c...We aimed to develop a process technology for constructing a carbon-based micro-electromechanical system that does not require a high-temperature and high-energy process. A HOPG （highly oriented pyrolytic graphite） crystal microsheet was prepared by exfoliation. Cantilevers and doubly clamped beams were patterned using a photoresist. The HOPG microsheet was attached by using a tantalum layer. We fabricated cantilevers and a doubly clamped beam by controlling the thickness of the HOPG microsheet and then measured the first resonance frequency. The measurements suggest a need to improve the stiffness of the beam.展开更多
In this study, we investigated the nucleation mechanism of perovskite films by employing isopropanol(IPA), a weakly coordinating solvent, to anneal both PbI2 and CH3 NH3 PbI3 in the sequential deposition and CsPbI3 in...In this study, we investigated the nucleation mechanism of perovskite films by employing isopropanol(IPA), a weakly coordinating solvent, to anneal both PbI2 and CH3 NH3 PbI3 in the sequential deposition and CsPbI3 in the one-step deposition. IPA solvent annealing(IPA SA) of PbI2 films was carried out at different temperatures. The grain size,compactness, roughness and morphology of PbI2 and CH3 NH3 PbI3 films were seriously affected by annealing methods. Similarly, weakly coordinating solvent annealing process was also employed to anneal all inorganic CsPbI3 perovskite in a one-step method. A continuous and dense CsPbI3 film with uniform grain size was obtained. We recognized that weakly coordinating solvent annealing for perovskite could regulate the dissolution-recrystallization process via controlling the volume of residual solvent in perovskite intermediate films. The power conversion efficiency(PCE) of conventional CH3 NH3 PbI3 perovskite solar cells(PSCs)reached 17.4% and that of CsPbI3 PSCs reached 2.5% based on this sequential IPA SA process.展开更多
Electro-deposition, electrical activation, thermal oxidation, and reactive ion sputtering are the four primary methods to fabricate iridium oxide film. Among these methods, reactive ion sputtering is a commonly used m...Electro-deposition, electrical activation, thermal oxidation, and reactive ion sputtering are the four primary methods to fabricate iridium oxide film. Among these methods, reactive ion sputtering is a commonly used method in standard micro-fabrication processes. In different sputtering conditions, the component, texture, and electrochemistry character of iridium oxide varies considerably. To fabricate the iridium oxide film compatible with the wafer-level processing of neural electrodes, the quality of iridium oxide film must be able to withstand the mechanical and chemical impact of post-processing, and simultaneously achieve good performance as a neural electrode. In this study, parameters of sputtering were researched and developed to achieve a balance between mechanical stability and good electrochemical characteristics of iridium oxide film on electrode. Iridium oxide fabricating process combined with fabrication flow of silicon electrodes, at wafer-level, is introduced to produce silicon based planar iridium oxide neural electrodes. Compared with bare gold electrodes, iridium oxide electrodes fabricated with this method exhibit particularly good electrochemical stability, low impedance of 386 kW at 1 kH z, high safe charge storage capacity of 3.2 m C/cm^2, and good impedance consistency of less than 25% fluctuation.展开更多
文摘A monolithically integrated optoelectronic receiver is presented. A silicon-based photo-diode and receiver circuits are integrated on identical substrates in order to eliminate the parasitics induced by hybrid packaging. Implemented in the present deep sub-micron MS/RF （mixed signal, radio frequency） CMOS,this monolithically OEIC takes advantage of several new features to improve the performance of the photo-diode and eventually the whole OEIC.
文摘We aimed to develop a process technology for constructing a carbon-based micro-electromechanical system that does not require a high-temperature and high-energy process. A HOPG （highly oriented pyrolytic graphite） crystal microsheet was prepared by exfoliation. Cantilevers and doubly clamped beams were patterned using a photoresist. The HOPG microsheet was attached by using a tantalum layer. We fabricated cantilevers and a doubly clamped beam by controlling the thickness of the HOPG microsheet and then measured the first resonance frequency. The measurements suggest a need to improve the stiffness of the beam.
基金supported by the National Natural Science Foundation of China(61574029,61421002 and 61574029)supported by University of Kentucky
文摘In this study, we investigated the nucleation mechanism of perovskite films by employing isopropanol(IPA), a weakly coordinating solvent, to anneal both PbI2 and CH3 NH3 PbI3 in the sequential deposition and CsPbI3 in the one-step deposition. IPA solvent annealing(IPA SA) of PbI2 films was carried out at different temperatures. The grain size,compactness, roughness and morphology of PbI2 and CH3 NH3 PbI3 films were seriously affected by annealing methods. Similarly, weakly coordinating solvent annealing process was also employed to anneal all inorganic CsPbI3 perovskite in a one-step method. A continuous and dense CsPbI3 film with uniform grain size was obtained. We recognized that weakly coordinating solvent annealing for perovskite could regulate the dissolution-recrystallization process via controlling the volume of residual solvent in perovskite intermediate films. The power conversion efficiency(PCE) of conventional CH3 NH3 PbI3 perovskite solar cells(PSCs)reached 17.4% and that of CsPbI3 PSCs reached 2.5% based on this sequential IPA SA process.
基金supported by the National Natural Science Foundation of China(Grant Nos.61335010,61275145,61275200&61275145)the National Hi-Tech Research and Development Program of China("863"Project)(Grant No.2013AA032204)+1 种基金the Brain Vanguard Technology Crossover Cooperation Projects of Chinese Academy of Sciences(GrantNo.KJZD-EW-L11-01)the Recruitment Program for Young Professionals
文摘Electro-deposition, electrical activation, thermal oxidation, and reactive ion sputtering are the four primary methods to fabricate iridium oxide film. Among these methods, reactive ion sputtering is a commonly used method in standard micro-fabrication processes. In different sputtering conditions, the component, texture, and electrochemistry character of iridium oxide varies considerably. To fabricate the iridium oxide film compatible with the wafer-level processing of neural electrodes, the quality of iridium oxide film must be able to withstand the mechanical and chemical impact of post-processing, and simultaneously achieve good performance as a neural electrode. In this study, parameters of sputtering were researched and developed to achieve a balance between mechanical stability and good electrochemical characteristics of iridium oxide film on electrode. Iridium oxide fabricating process combined with fabrication flow of silicon electrodes, at wafer-level, is introduced to produce silicon based planar iridium oxide neural electrodes. Compared with bare gold electrodes, iridium oxide electrodes fabricated with this method exhibit particularly good electrochemical stability, low impedance of 386 kW at 1 kH z, high safe charge storage capacity of 3.2 m C/cm^2, and good impedance consistency of less than 25% fluctuation.
