One of the most important components of a linac is bunchcr. Throughout most of the buncher, the electrons are well forward of the crest and have velocities considerably less than light velocity, thus they arc in a reg...One of the most important components of a linac is bunchcr. Throughout most of the buncher, the electrons are well forward of the crest and have velocities considerably less than light velocity, thus they arc in a region of radial dcfocusing and a considerable fraction of the beam will be lost unless defocusing action is counteracted by some other applied forces. The simplest way to do this is to sct up a longitudinal magnetic field which intcmcts with the radial motion of the electrons and causes them to follow helical orbits through the space occupied by the field. In this paper, five solenoids were designed to provide necessary magnetic field inside the bunchcr. Magnetic field was analytically calculated and compared with simulation results of Computer Simulation Technology （CST）. Because of resistance in wires, some amount of energy appears in form of heat, so heat power was calculated analytically and cooling system was designed for these solenoids by Analysis System （ANSYS）.展开更多
The aim of the study of phase shifter on MEMS （micro-electro-mechanical systems） structures was to minimize the dimensions of the design achievement. Also, the main task was to achieve the reliability and durability...The aim of the study of phase shifter on MEMS （micro-electro-mechanical systems） structures was to minimize the dimensions of the design achievement. Also, the main task was to achieve the reliability and durability of the device. The calculation was based on the optimization technique （step by step） and the modeling of individual parts of the device, namely MEMS-keys that perform the main function--switching. The urgency of this problem is the development and study of one device as a universal, that is, automatically switches from two signals simultaneously. Designs are original and devises are the intellectual property of the authors. The program for modeling phase shifters Computer Simulation Technology Microwave Studio and its results are presented in the paper.展开更多
The DS(directional solidification) polycrystalline silicon ingot is the most important photovoltaic material today,and the conversion efficiency of solar cells is affected by the morphology and organization of the cry...The DS(directional solidification) polycrystalline silicon ingot is the most important photovoltaic material today,and the conversion efficiency of solar cells is affected by the morphology and organization of the crystal.Uniform grains with larger size are conducive to get high-quality wafer,so improving the cell conversion efficiency.However,grains sizes that are less than 1 mm2 can be observed frequently in the central district of mc-Si ingots,which bring negative effect to the quality of the mc-Si ingot and decrease the electrical performance of wafer.In this paper,we make an attempt to explain the formation mechanism and influence factors of microcrystal in mc-Si ingot with computer simulation technology and theory of component supercooling.It was found that:to avoid production of microcrystal,it's better to increase the value of G/V(V is the growth rate and G is the near-interface temperature gradient),strengthen the melt convection front in the solidification interface and keep a fairly flat solid/melt interface in producing mc-Si ingot.展开更多
文摘One of the most important components of a linac is bunchcr. Throughout most of the buncher, the electrons are well forward of the crest and have velocities considerably less than light velocity, thus they arc in a region of radial dcfocusing and a considerable fraction of the beam will be lost unless defocusing action is counteracted by some other applied forces. The simplest way to do this is to sct up a longitudinal magnetic field which intcmcts with the radial motion of the electrons and causes them to follow helical orbits through the space occupied by the field. In this paper, five solenoids were designed to provide necessary magnetic field inside the bunchcr. Magnetic field was analytically calculated and compared with simulation results of Computer Simulation Technology （CST）. Because of resistance in wires, some amount of energy appears in form of heat, so heat power was calculated analytically and cooling system was designed for these solenoids by Analysis System （ANSYS）.
文摘The aim of the study of phase shifter on MEMS （micro-electro-mechanical systems） structures was to minimize the dimensions of the design achievement. Also, the main task was to achieve the reliability and durability of the device. The calculation was based on the optimization technique （step by step） and the modeling of individual parts of the device, namely MEMS-keys that perform the main function--switching. The urgency of this problem is the development and study of one device as a universal, that is, automatically switches from two signals simultaneously. Designs are original and devises are the intellectual property of the authors. The program for modeling phase shifters Computer Simulation Technology Microwave Studio and its results are presented in the paper.
基金supported by the Natural Science Foundation of Jiangsu Province of China (Grant No BK2008548)
文摘The DS(directional solidification) polycrystalline silicon ingot is the most important photovoltaic material today,and the conversion efficiency of solar cells is affected by the morphology and organization of the crystal.Uniform grains with larger size are conducive to get high-quality wafer,so improving the cell conversion efficiency.However,grains sizes that are less than 1 mm2 can be observed frequently in the central district of mc-Si ingots,which bring negative effect to the quality of the mc-Si ingot and decrease the electrical performance of wafer.In this paper,we make an attempt to explain the formation mechanism and influence factors of microcrystal in mc-Si ingot with computer simulation technology and theory of component supercooling.It was found that:to avoid production of microcrystal,it's better to increase the value of G/V(V is the growth rate and G is the near-interface temperature gradient),strengthen the melt convection front in the solidification interface and keep a fairly flat solid/melt interface in producing mc-Si ingot.
