The electronic structure,including band structure,density of states (DOS), and partial density of states of SrTi1-xSbxO3 with x = 0,0. 125,0.25,and 0.33 is calculated from the first principles of plane wave ultra-so...The electronic structure,including band structure,density of states (DOS), and partial density of states of SrTi1-xSbxO3 with x = 0,0. 125,0.25,and 0.33 is calculated from the first principles of plane wave ultra-soft pseudo-potential technology based on density function theory. The calculated results reveal that due to the electron doping,the Fermi level moves into the conduction bands for SrTi1-xSbxO3 with x = 0. 125 and the system shows metallic behavior. In addition, the DOS moves towards low energy and the optical band gap is broadened. The wide band gap and the low density of the states in the conduction band result in the transparency of the films.展开更多
Using the first-principles calculations based on density functional theory(DFT),the structure stability,electronic and some optical properties of C and N doped cubic ZrO2(c-ZrO2) in 24-atom systems were investigated.I...Using the first-principles calculations based on density functional theory(DFT),the structure stability,electronic and some optical properties of C and N doped cubic ZrO2(c-ZrO2) in 24-atom systems were investigated.It is found from the formation energies calculations that N ions are easier to be doped into c-ZrO2 than C ions.The electronic structure results show that Zr8O15C and Zr8O15N systems are semiconductors with the band gap of 2.3 eV and 2.8 eV,respectively,which are lower than that of the pure ZrO2(3.349 eV).And optical properties results depict that anion doping,especially C adding,can enhance the static dielectric function,visible and ultraviolet light absorption and reflecting ability of c-ZrO2 crystal.展开更多
A first-principles study has been performed to calculate the electronic and optical properties of the SbxSn1xO system.The simulations are based upon the method of generalized gradient approximations with the Perdew-Bu...A first-principles study has been performed to calculate the electronic and optical properties of the SbxSn1xO system.The simulations are based upon the method of generalized gradient approximations with the Perdew-Burke-Ernzerhof form in the framework of density functional theory.The supercell structure shows a trend from expanding to shrinking with the increasing Sb concentration.The increasing Sb concentration induces the band gap narrowing.Optical transition has shifted to the low energy range with increasing Sb concentration.Other important optical constants such as the dielectric function,reflectivity,refractive index,and electron energy loss function for Sb-doped SnO2 are discussed.The optical absorption edge of SnO2 doped with Sb also shows a redshift.展开更多
The first-principles calculations were performed to investigate the electronic structure, magnetic and dielectric properties of Cr-doped Fe_3C, in comparison to those of pure Fe_3C and Cr_3C. The obtained results show...The first-principles calculations were performed to investigate the electronic structure, magnetic and dielectric properties of Cr-doped Fe_3C, in comparison to those of pure Fe_3C and Cr_3C. The obtained results show that the thermodynamic stability of Crdoped Fe_3C becomes weaker in terms of the larger formation enthalpy, on the contrary, the metallicity and covalency are found to strengthen to some extent. The magnetic moments of Fe_3C, Fe_(11)CrC_4(g), and Fe_(11)CrC_4(s) are respectively 21.36 μB/cell, 16.92 μB/cell, and 17.62 μB/cell, and in Fe_(11)CrC4(g) and Fe_(11)CrC_4(s), the Fe of Wyckoff positions of 8d and 4c is substituted by Cr. The local magnetic moment of Cr at 8d site is larger than that at 4c site in the doped structure, which is opposite to that of Fe. In low frequency band, the permittivity follows the ranking of Fe_(11)Cr C_4(s)>Cr_3C>Fe_(11)Cr C_4(g)>Fe_3C. Once exceeding a certain frequency, the sequence will be broken. Besides the electron transition, the polarization of atoms also makes a contribution to the dielectric properties.展开更多
The band structure, density of states, electron density difference and optical properties of intrinsic β-Ga2O3 and N-doped β-Ga2O3 were calculated using first-principles based on density functional theory. After N d...The band structure, density of states, electron density difference and optical properties of intrinsic β-Ga2O3 and N-doped β-Ga2O3 were calculated using first-principles based on density functional theory. After N doping, the band gap decreases, shallow acceptor impurity levels are introduced over the top of the valence band and the absorption band edge is slightly red-shifted compared to that of the intrinsic one. The anisotropic optical properties are investigated by means of the complex dielectric function, which are explained by the selection rule of the band-to-band transitions. All calculation results indicate that N-doping is a very promising method to get P-type β-Ga2O3.展开更多
A series of two-dimensional (2D) conjugated copolymers with spatial D-A-D structures (PTNBTB, PTCBTB, and PTSBTB) consisting of hetero-atom-bridged dithiophene and phenylvinyl-substituted benzothiadiazole blocks i...A series of two-dimensional (2D) conjugated copolymers with spatial D-A-D structures (PTNBTB, PTCBTB, and PTSBTB) consisting of hetero-atom-bridged dithiophene and phenylvinyl-substituted benzothiadiazole blocks in the main chain have been designed, synthesized, and characterized. The structure-property relationships of the resulting copolymers were systematically investigated. The effects of the bridging atoms (N, C, and Si) on their thermal, optical, electrochemical and charge- transporting properties were also studied. PTNBTB exhibits a smaller band gap with red-shifted absorption, whereas PTSBTB possesses deeper HOMO level and higher hole mobility than PTCBTB or PTSBTB. Bulk heterojunction (BHJ) solar cells were fabricated and characterized with the conventional configuration of ITO/PEDOT:PSS/copolymer:PCT^BM (I:I)/Ca/A1. As ex- pected, PTSBTB devices showed the highest PCE, up to 4.01%, which was due to the lower HOMO level, higher carrier mobility, and stronger optical response as well as the finer nanoscale phase separation of the pristine polymer and/or the corresponding blending active layer with PC71BM. The primary results offer useful insights in designing 2D copolymers with spatial D-A-D backbone and different hetero-atom bridged donor units to finely tune the absorptions, electronic energy levels, carrier mobilities and the photovoltaic properties.展开更多
文摘The electronic structure,including band structure,density of states (DOS), and partial density of states of SrTi1-xSbxO3 with x = 0,0. 125,0.25,and 0.33 is calculated from the first principles of plane wave ultra-soft pseudo-potential technology based on density function theory. The calculated results reveal that due to the electron doping,the Fermi level moves into the conduction bands for SrTi1-xSbxO3 with x = 0. 125 and the system shows metallic behavior. In addition, the DOS moves towards low energy and the optical band gap is broadened. The wide band gap and the low density of the states in the conduction band result in the transparency of the films.
基金Project(61172047) supported by the National Natural Science Foundation of China
文摘Using the first-principles calculations based on density functional theory(DFT),the structure stability,electronic and some optical properties of C and N doped cubic ZrO2(c-ZrO2) in 24-atom systems were investigated.It is found from the formation energies calculations that N ions are easier to be doped into c-ZrO2 than C ions.The electronic structure results show that Zr8O15C and Zr8O15N systems are semiconductors with the band gap of 2.3 eV and 2.8 eV,respectively,which are lower than that of the pure ZrO2(3.349 eV).And optical properties results depict that anion doping,especially C adding,can enhance the static dielectric function,visible and ultraviolet light absorption and reflecting ability of c-ZrO2 crystal.
基金Supported by the Fundamental Research Funds for the Central Universities under Grant No. BUPT2009RC0412the National Natural Science Foundation of China under Grant Nos. 60908028 and 60971068
文摘A first-principles study has been performed to calculate the electronic and optical properties of the SbxSn1xO system.The simulations are based upon the method of generalized gradient approximations with the Perdew-Burke-Ernzerhof form in the framework of density functional theory.The supercell structure shows a trend from expanding to shrinking with the increasing Sb concentration.The increasing Sb concentration induces the band gap narrowing.Optical transition has shifted to the low energy range with increasing Sb concentration.Other important optical constants such as the dielectric function,reflectivity,refractive index,and electron energy loss function for Sb-doped SnO2 are discussed.The optical absorption edge of SnO2 doped with Sb also shows a redshift.
基金Project(51174252)supported by the Joint Funds of the National Natural Science Foundation of China
文摘The first-principles calculations were performed to investigate the electronic structure, magnetic and dielectric properties of Cr-doped Fe_3C, in comparison to those of pure Fe_3C and Cr_3C. The obtained results show that the thermodynamic stability of Crdoped Fe_3C becomes weaker in terms of the larger formation enthalpy, on the contrary, the metallicity and covalency are found to strengthen to some extent. The magnetic moments of Fe_3C, Fe_(11)CrC_4(g), and Fe_(11)CrC_4(s) are respectively 21.36 μB/cell, 16.92 μB/cell, and 17.62 μB/cell, and in Fe_(11)CrC4(g) and Fe_(11)CrC_4(s), the Fe of Wyckoff positions of 8d and 4c is substituted by Cr. The local magnetic moment of Cr at 8d site is larger than that at 4c site in the doped structure, which is opposite to that of Fe. In low frequency band, the permittivity follows the ranking of Fe_(11)Cr C_4(s)>Cr_3C>Fe_(11)Cr C_4(g)>Fe_3C. Once exceeding a certain frequency, the sequence will be broken. Besides the electron transition, the polarization of atoms also makes a contribution to the dielectric properties.
基金supported by the National Natural Science Foundation of China (Grant No. 10974077)the Natural Science Foundation of Shandong Province, China (Grant No. 2009ZRB01702)the Project of Shandong Province Higher Educational Science and Technology Program (Grant No. J10LA08)
文摘The band structure, density of states, electron density difference and optical properties of intrinsic β-Ga2O3 and N-doped β-Ga2O3 were calculated using first-principles based on density functional theory. After N doping, the band gap decreases, shallow acceptor impurity levels are introduced over the top of the valence band and the absorption band edge is slightly red-shifted compared to that of the intrinsic one. The anisotropic optical properties are investigated by means of the complex dielectric function, which are explained by the selection rule of the band-to-band transitions. All calculation results indicate that N-doping is a very promising method to get P-type β-Ga2O3.
基金supported by the National Natural Science Foundation of China(20802033,21272164)the National High-Tech R&D Program of China(2013AA031901)+1 种基金the Youth Science and Technology Foundation of Sichuan Province(2013JQ0032)the Fundamental Research Funds for the Central Universities(2012SCU04B01,YJ2011025)
文摘A series of two-dimensional (2D) conjugated copolymers with spatial D-A-D structures (PTNBTB, PTCBTB, and PTSBTB) consisting of hetero-atom-bridged dithiophene and phenylvinyl-substituted benzothiadiazole blocks in the main chain have been designed, synthesized, and characterized. The structure-property relationships of the resulting copolymers were systematically investigated. The effects of the bridging atoms (N, C, and Si) on their thermal, optical, electrochemical and charge- transporting properties were also studied. PTNBTB exhibits a smaller band gap with red-shifted absorption, whereas PTSBTB possesses deeper HOMO level and higher hole mobility than PTCBTB or PTSBTB. Bulk heterojunction (BHJ) solar cells were fabricated and characterized with the conventional configuration of ITO/PEDOT:PSS/copolymer:PCT^BM (I:I)/Ca/A1. As ex- pected, PTSBTB devices showed the highest PCE, up to 4.01%, which was due to the lower HOMO level, higher carrier mobility, and stronger optical response as well as the finer nanoscale phase separation of the pristine polymer and/or the corresponding blending active layer with PC71BM. The primary results offer useful insights in designing 2D copolymers with spatial D-A-D backbone and different hetero-atom bridged donor units to finely tune the absorptions, electronic energy levels, carrier mobilities and the photovoltaic properties.