The Influence of Rapid Thermal Annealing on SiGe/Si Multiple-Quantum Wells p_-i_-n Photodiodes

The influence of thermal treatment on Si 1-x Ge x/Si multiple-quantum wells (MQW) p-i-n photodiodes has been investigated by photocurrent spectroscopy combined with X-ray double crystal diffraction.The cutoff wavelength is significantly reduced due to the Si-Ge interdiffusion and partial relaxation of the strained SiGe alloy.The values of the blue shift increase slowly with the annealing temperatures in the range of 750℃ to 850℃.However,the nonlinear changes in photocurrent intensities of the samples annealed at different temperatures have been observed,which is mainly dominated by the generation of misfit dislocations and the reduction of the point defects in the heating process.

具有给定稳定数和连通性的极值图(英文)

如果n阶图G的稳定数为α，连通数为k，则称之为一个(n,α,k)图. Chváta和Erdos证明如果α≤k,则G是一个哈密尔顿图.如果α-1≥k≥2, 图G多大才能保证存在一个哈密尔顿圈? 本文回答了这个问题，进一步特征化极大数目的边的图，即给出了极图(n,α,k)的特征.

φ-pH diagram of As-N-Na-H_2O system for arsenic removal during alkaline pressure oxidation leaching of lead anode slime

In order to illustrate the thermodynamic characteristics of arsenic during alkaline pressure oxidation leaching process oflead anode slime(NaNO3as oxidant;NaOH as alkaline reagent),theφ-pH diagrams of As-Na-H2O,N-H2O,As-N-Na-H2Osystems at ionic mass concentration of0.1mol/kg and temperatures of298,373,423and473K were established according tothermodynamic calculation.The results show that the existence forms of arsenic are associated with pH value,which mainly exists inthe forms of H3AsO4,24H AsO-,24HAsO-,H2AsO2-and As2O3in lower pH region,while it mainly exists in the form of3AsO4-when pH>11.14.High alkali concentration and high temperature are advantageous to the arsenic leaching.The alkaline pressureoxidation leaching experiments display that the tendency of arsenic leaching rate confirms the thermodynamic analysis resultsobtained from theφ-pH diagrams of As-N-Na-H2O system,and the highest leaching rate of arsenic reaches95.85%at453K.

Hawking Radiation from Spherically Symmetrical Gravitational Collapse to an Extremal R-N Black Hole for a Charged Scalar Field

Si-Jie Gao has recently investigated Hawking radiation from spherically symmetrical gravitational collapse to an extremal R-N black hole for a real scalar field. Especially he estimated the upper bound for the expected number of particles in any wave packet belonging to spontaneously produced from the state , which confirms the traditional belief that extremal black holes do not radiate particles. Making some modifications, we demonstrate that the analysis can go through for a charged scalar field.

Strong Current-Polarization and Negative Differential Resistance in FeN3-Embedded Armchair Graphene Nanoribbons

Motivated by the recent advances of transition-metal-nitrogen-carbon (TM-N-C) materials in catalysis, we investigate the electronic structure and transport properties of FeN3-embedded armchair and zigzag graphene nanoribbons (FeN3@AGNRs, FeN3@ZGNRs) with different widths. The first-principles results indicate that the FeN3 induces significant changes on the band structures of both ZGNRs and AGNRs, making the resultant systems quite different from the pristine ones and own room-temperature stable ferromagnetic (FM) ground states. While only FeN3@AGNRs possess a significant spin-dependent negative differential resistance (NDR) and a striking current polarization (nearly 100%) behaviors, due to that FeN3 introduces two isolated spin-down states, which contribute current with different performances when they couple with different frontier orbits. It is suggested that by embedding FeN3 complexes, AGNRs can be used to build spin devices in spintronics.

Dependences of spin polarization on the control parameters in the spin-polarized injection through the magnetic p-n junction

Effective spin-polarized injection from magnetic semiconductor （MS） to nonmagnetic semiconductor （NMS） has been highlighted in recent years. In this paper we study theoretically the dependence of nonequilibrium spin polarization （NESP） in NMS during spin-polarized injection through the magnetic p-n junction. Based on the theory in semiconductor physics, a model is established and the boundary conditions are determined in the case of no external spin-polarized injection and low bias. The control parameters that may influence the NESP in NMS are indicated by calculating the distribution of spin polarization. They are the doping concentrations, the equilibrium spin polarization in MS and the bias. The effective spin-polarized injection can be realized more easily by optimizing the above parameters.

Existence of Solutions for Generalized Sturm-Liouville m-point Boundary Value Problems in Banach Spaces

By applying the fixed-point theorem of strict-set-contraction,this paper establishes the existence of one solution or one positive solution to the generalized Sturm-Liouville m-point boundary value problem in Banach spaces.

Pre-dispersed carbon black as conductive agent for LiFePO_4 cathodes

High dispersed carbon black was applied for LiFePO4 cathodes as conductive agent.Nano-conductive carbon agent was pre-dispersed with poly acrylic acid(PAA) as dispersant in organic N-methyl-pyrrolidone(NMP) solvent system.The dispersion property of nano-conductive carbon agent was evaluated using particle size distribution measurements,scanning electron microscopy(SEM) and transmission electron microscope(TEM).LiFePO4 cathode with as-received nano-conductive carbon agent(SP) and LiFePO4 cathode with pre-dispersed nano-conductive carbon agent(SP-PAA) were examined by scanning electron microscopy(SEM),cyclic voltammetry(CV),electrochemical impendence spectroscopy(EIS) and charge/discharge cycling performance.Results show that the dispersion property of carbon black is improved by using PAA as the dispersant.The LiFePO4 cathodes with SP-PAA exhibit improved rate behaviors(4C,135.1 mAh/g) and cycle performance(95%,200 cycles) compared to LiFePO4 cathodes with SP(4C,103.9 mAh/g and 83%,200 cycles).Because pre-dispersed carbon black(SP-PAA) is dispersed homogeneously in the dried composite electrode to form a more uniform conductive network between the active material particles,electrochemical performances of the LiFePO4 cathodes are improved.

Boundedness of Higher Order Commutators of Fractional Integral Operators on Homogeneous Morrey-Herz Spaces

Some boundedness results are established in the setting of homogeneous Morrey-Herz spaces for a class of higher order commutators T^mb,l and M^mb,l generated by fractional integral operators Tl and maximal fractional operators Ml with function b（x） in BMO（R^n）, respectively.

On Conformal Minimal Immersions of Two-Spheres into CPN

A curvature pinching theorem is given on conformal immersions of two spheres into CPN in this paper.

Wavelength-tunable infrared light emitting diode based on ordered ZnO nanowire/Si1-xGex alloy heterojunction

A novel infrared light emitting diode （LED） based on an ordered p-n heterojunction built of a p-Si1-xGe/alloy and n-ZnO nanowires has been developed. The electroluminescence （EL） emission of this LED is in the infrared range, which is dominated by the band gap of Si1-xGex alloy. The EL wavelength variation of the LED shows a red shift, which increases with increasing mole fraction of Ge. With Ge mole fractions of 0.18, 0.23 and 0.29, the average EL wavelengths are around 1,144, 1,162 and 1,185 nm, respectively. The observed magnitudes of the red shifts are consistent with theoretical calculations. Therefore, by modulating the mole fraction of Ge in the Si1-xGex alloy, we can adjust the band gap of the SiGe film and tune the emission wavelength of the fabricated LED. Such an IR LED device may have great potential applications in optical communication, environmental monitoring and biological and medical analyses.

The highly conducting carbon electrodes derived from spin-coated polyacrylonitrile films

Carbon films prepared from pyrolyzation of spin-casted polyacrylonitrile （PAN） thin films display high electrical conductivity （〉600 S/cm, at 1000 ℃ carbonization）, low sheet resistance （about 100 Y2/square at the PAN film thickness of 70 nm） and partial transmittance. These pyrolyzed PAN （PPAN） films were patterned as bottom electrodes by photolithography, and utilized as drain and source electrodes to fabricate organic field-effect transistor （OFET） devices with a p-type semiconductor （P3HT） and an n-type semiconductor （DPP-containing quinoidal small molecule） through a spin-coating procedure. The results showed that the devices with the PAN electrodes exhibited almost the same excellent performance without any further modification compared to those devices with traditional Au electrodes. Since these PPAN films had the advantages of low-cost, high performance, easier for large-area fabrication, thermal and chemical stability, it should be a promising electrode material for organic electrodes.

Carleson-Type Maximal Operators with Variable Kernels

The author considers the L^p boundedness for two kinds of Carleson-type maximal operators with variable kernels(Ω(x,y'))/(|y|~n),whereΩ(x,y')∈L~∞(R^n)×W_2~s(S^(n-1))for some s>0.

Extremals in some classes of Carnot groups

Let G be a Carnot group and D={e 1,e 2 } be a bracket generating left invariant distribution on G.In this paper,we obtain two main results.We first prove that there only exist normal minimizers in G if the type of D is (2,1,...,1) or (2,1,...,1,2).This immediately leads to the fact that there are only normal minimizers in the Goursat manifolds.As one corollary,we also obtain that there are only normal minimizers when dim G 5.We construct a class of Carnot groups such as that of type (2,1,...,1,2,n 0,...,n a) with n 0 1,n i 0,i=1,...,a,in which there exist strictly abnormal extremals.This implies that,for any given manifold of dimension n 6,we can find a class of n-dimensional Carnot groups having strictly abnormal minimizers.We conclude that the dimension n=5 is the border line for the existence and nonexistence of strictly abnormal extremals.Our main technique is based on the equations for the normal and abnormal extremals.

Advanced non-precious electrocatalyst of the mixed valence CoO_x nanocrystals supported on N-doped carbon nanocages for oxygen reduction

Taking advantage of the nitrogen(N)-participation and large surface area of N-doped carbon nanocages(NCNCs),the Co Ox nanocrystals are conveniently immobilized onto the NCNCs with high dispersion.The Co Ox/NCNCs hybrid exists in the mixed valence with predominant Co O over Co3O4 and demonstrates superb oxygen reduction reaction activity and stability remaining^94%current density even after operation over 100 h.These results suggest a promising strategy to develop advanced electrocatalysts with the novel NCNCs or even beyond.

Wafer-scale arrayed p-n junctions based on few-layer epitaxial GaTe

Two-dimensional （2D） materials have attracted substantial attention in electronic and optoelectronic applications with the superior advantages of being flexible, transparent, and highly tunable. Gapless graphene exhibits ultra-broadband and fast photoresponse while the 2D semiconducting MoS2 and GaTe exhibit high sensitivity and tunable responsivity to visible light. However, the device yield and repeatability call for further improvement to achieve large-scale uniformity. Here, we report a layer-by-layer growth of wafer-scale GaTe with a high hole mobility of 28.4 cm^2/（V.s） by molecular beam epitaxy. The arrayed p-n ）unctions were developed by growing few-layer GaTe directly on fhree-inch Si wafers. The resultant diodes reveal good rectifying characteristics and a high photovoltaic external quantum efficiency up to 62% at 4.8 μW under zero bias. The photocurrent reaches saturation fast enough to capture a time constant of 22 μs and shows no sign of device degradation after 1.37 million cycles of operation. Most strikingly, such high performance has been achieved across the entire wafer, making the volume production of devices accessible. Finally, several photoimages were acquired by the GaTe/Si photodiodes with reasonable contrast and spatial resolution, demonstrating the potential of integrating the 2D materials with silicon technology for novel optoelectronic devices.

Experimental study of GaN based blue light emitting diodes with a thin AlInN layer in front of the electron blocking layer

The Ga N based blue light emitting diodes(LEDs) with a thin Al In N layer inserted in front of the electron blocking layer(EBL) are experimentally studied.It is found that inserting a thin EBL can improve the light output power and reduce the efficiency droop compared with the conventional Al Ga N counterparts.Based on numerical simulation and analysis,the improvement on the electrical and optical characteristics is mainly attributed to the reduction of the electron leakage current,which increases the concentration of carriers in the quantum well(QW) when the thin Al In N layer is used.