This paper describes the fabrication and electrical characteristics of Ti/4H-SiC Schottky barrier diodes （SBDs）. The ideality factor n = 1.08 and effective Schottky barrier heightφ= 1.05eV of the SBDs were measured...This paper describes the fabrication and electrical characteristics of Ti/4H-SiC Schottky barrier diodes （SBDs）. The ideality factor n = 1.08 and effective Schottky barrier heightφ= 1.05eV of the SBDs were measured with the method of forward current density-voltage （J-V）. A low reverse leakage current below 5.96 ×10^-3A/cm^2 at a bias voltage of - 1. 1kV was obtained. By using B^＋ implantation,an amorphous layer as the edge termination was formed. We used the PECVD SiO2 as the field plate dielectric. The SBDs have an on-state current density of 430A/cm^2 at a forward voltage drop of about 4V. The specific on-resistance Ro, was found to be 6. 77mΩ2 · cm^2 .展开更多
By calculating the energy distribution of electrons reaching the photocathode surface and solving the Schrodinger equation that describes the behavior of an electron tunneling through the surface potential barrier,we ...By calculating the energy distribution of electrons reaching the photocathode surface and solving the Schrodinger equation that describes the behavior of an electron tunneling through the surface potential barrier,we obtain an equation to calculate the emitted electron energy distribution of transmission-mode NEA GaAs photocathodes. Accord- ing to the equation,we study the effect of cathode surface potential barrier on the electron energy distribution and find a significant effect of the barrier-Ⅰ thickness or end height,especially the thickness,on the quantum efficiency of the cath- ode. Barrier Ⅱ has an effect on the electron energy spread, and an increase in the vacuum level will lead to a narrower electron energy spread while sacrificing a certain amount of cathode quantum efficiency. The equation is also used to fit the measured electron energy distribution curve of the transmission-mode cathode and the parameters of the surface barri- er are obtained from the fitting. The theoretical curve is in good agreement with the experimental curve.展开更多
The fabrication and electrical characterization of Scho tt ky barrier diodes (SBD) on 6H-SiC,via thermal evaporation of Ni are reported.Th e Schottky barrier diodes are fabricated during the 6H-SiC epilayers grow n b...The fabrication and electrical characterization of Scho tt ky barrier diodes (SBD) on 6H-SiC,via thermal evaporation of Ni are reported.Th e Schottky barrier diodes are fabricated during the 6H-SiC epilayers grow n by using chemical vapor deposition on commercially available single-crystal 6 H-SiC wafers.The I-V characteristics of these diodes exhibit a sharp break down,with the breakdown voltage of 450V at room temperature.The diodes are demon strated to be of a low reverse leakage current of 5×10 -4 A·cm -2 at the bias voltage of -200V.The ideal factor and barrier height are 1 09 and 1 24-1 26eV,respectively.展开更多
The effect of changing Be doping concentration in GaAs layer on the integrated photosensitivity for nega- tive-electron-affinity GaAs photocathodes is investigated. Two GaAs samples with the monolayer structure and th...The effect of changing Be doping concentration in GaAs layer on the integrated photosensitivity for nega- tive-electron-affinity GaAs photocathodes is investigated. Two GaAs samples with the monolayer structure and the muhilayer structure are grown by molecular beam epitaxy. The former has a constant Be concentration of 1 × 10^19 cm^-3, while the latter includes four layers with Be doping concentrations of 1 × 10^19, 7 × 10^18, 4 × 10^18, and 1 × 10^18 cm^-3 from the bottom to the surface. Negative-electron-affinity GaAs photocathodes are fabricated by exciting the sample surfaces with alternating input of Cs and O in the high vacuum system. The spectral response results measured by the on-line spectral response measurement system show that the integrated photosensitivity of the photocathode with the muhilayer structure enhanced by at least 50% as compared to that of the monolayer structure. This attributes to the improvement in the crystal quality and the increase in the surface escape probability. Different stress situations are observed on GaAs samples with monolayer structure and muhilayer structure, respectively.展开更多
Density functional method （B3p86） was used to optimize the structure of the molecule Fe2. The result showed that the ground electronic state for the molecule Fe2 is nonet state instead of septet state, which indicat...Density functional method （B3p86） was used to optimize the structure of the molecule Fe2. The result showed that the ground electronic state for the molecule Fe2 is nonet state instead of septet state, which indicates that there is a spin polarization effect in the molecule Fe2, i.e., in which there are 8 parallel spin electrons.In this case, the number of the unpaired d-orbit electrons is the largest, and these electrons occupy different spatial orbitals so that the energy of the molecule Fe2 is minimized. Meanwhile, the spin pollution was not found because the wave functions of the ground state do not mix with those of the higher energy states. In addition, the Murrell-Sorbie potential functions with the parameters for the ground electronic state and other exited electronic states of the molecule Fe2 were derived. The dissociation energy, equilibrium bond length and the vibration frequency for the ground electronic state of the molecule Fe2 are 3.5522 eV, 0.2137 nm and 292.914 cm^-1, respectively. Its force constants f2, f3 and f4 are 1.4115×1^02 a J/nm^2, -37.1751×103^aJ/nm^3 and 98.7596× 10^4 a J/nm^4, respectively. The other spectroscopic parameters ωexe, Be and αe for the ground electronic state of Fe2 are 0.3522, 0.0345 and 0.4963× 10^-4 cm^-1, respectively.展开更多
Two interacting light filaments with different initial phases propagating in air are investigated numerically by using a ray tracing method. The evolution of the rays of a filament is governed by a potential field. Du...Two interacting light filaments with different initial phases propagating in air are investigated numerically by using a ray tracing method. The evolution of the rays of a filament is governed by a potential field. During propagation, the two potential wells of the two filaments can merge into one or repel each other, depending on the initial phase difference between the two filaments. The study provides a simple description of the interacting filaments.展开更多
We have studied the effects of the finite range on the fusion and/or breakup of ^6He^＋238U and ^11Li＋^208pb Pb dynamic polarization potential approach. It has been found of the interaction between the fragments of t...We have studied the effects of the finite range on the fusion and/or breakup of ^6He^＋238U and ^11Li＋^208pb Pb dynamic polarization potential approach. It has been found of the interaction between the fragments of the projectile systems at near barrier energies within the framework of that at near barrier energies the maximum flux is lost to the breakup channel and at energies well above the Coulomb barrier the fusion coupled with the breakup channel opens up, initially with sharp rise and later becoming saturated at energy nearly twice of the Coulomb barrier. Further, it is found that the breakup cross section increases with the increasing range of the interaction between the fragments of the projectile while the fusion coupled with the breakup channel cross section decreases with the increasing range.展开更多
文摘This paper describes the fabrication and electrical characteristics of Ti/4H-SiC Schottky barrier diodes （SBDs）. The ideality factor n = 1.08 and effective Schottky barrier heightφ= 1.05eV of the SBDs were measured with the method of forward current density-voltage （J-V）. A low reverse leakage current below 5.96 ×10^-3A/cm^2 at a bias voltage of - 1. 1kV was obtained. By using B^＋ implantation,an amorphous layer as the edge termination was formed. We used the PECVD SiO2 as the field plate dielectric. The SBDs have an on-state current density of 430A/cm^2 at a forward voltage drop of about 4V. The specific on-resistance Ro, was found to be 6. 77mΩ2 · cm^2 .
文摘By calculating the energy distribution of electrons reaching the photocathode surface and solving the Schrodinger equation that describes the behavior of an electron tunneling through the surface potential barrier,we obtain an equation to calculate the emitted electron energy distribution of transmission-mode NEA GaAs photocathodes. Accord- ing to the equation,we study the effect of cathode surface potential barrier on the electron energy distribution and find a significant effect of the barrier-Ⅰ thickness or end height,especially the thickness,on the quantum efficiency of the cath- ode. Barrier Ⅱ has an effect on the electron energy spread, and an increase in the vacuum level will lead to a narrower electron energy spread while sacrificing a certain amount of cathode quantum efficiency. The equation is also used to fit the measured electron energy distribution curve of the transmission-mode cathode and the parameters of the surface barri- er are obtained from the fitting. The theoretical curve is in good agreement with the experimental curve.
文摘The fabrication and electrical characterization of Scho tt ky barrier diodes (SBD) on 6H-SiC,via thermal evaporation of Ni are reported.Th e Schottky barrier diodes are fabricated during the 6H-SiC epilayers grow n by using chemical vapor deposition on commercially available single-crystal 6 H-SiC wafers.The I-V characteristics of these diodes exhibit a sharp break down,with the breakdown voltage of 450V at room temperature.The diodes are demon strated to be of a low reverse leakage current of 5×10 -4 A·cm -2 at the bias voltage of -200V.The ideal factor and barrier height are 1 09 and 1 24-1 26eV,respectively.
文摘The effect of changing Be doping concentration in GaAs layer on the integrated photosensitivity for nega- tive-electron-affinity GaAs photocathodes is investigated. Two GaAs samples with the monolayer structure and the muhilayer structure are grown by molecular beam epitaxy. The former has a constant Be concentration of 1 × 10^19 cm^-3, while the latter includes four layers with Be doping concentrations of 1 × 10^19, 7 × 10^18, 4 × 10^18, and 1 × 10^18 cm^-3 from the bottom to the surface. Negative-electron-affinity GaAs photocathodes are fabricated by exciting the sample surfaces with alternating input of Cs and O in the high vacuum system. The spectral response results measured by the on-line spectral response measurement system show that the integrated photosensitivity of the photocathode with the muhilayer structure enhanced by at least 50% as compared to that of the monolayer structure. This attributes to the improvement in the crystal quality and the increase in the surface escape probability. Different stress situations are observed on GaAs samples with monolayer structure and muhilayer structure, respectively.
基金This work was supported by the National Natural Science Foundation of China （No. 10574096） the Research Fund for the Doctoral Program of High Education （No. 20050610010）.
文摘Density functional method （B3p86） was used to optimize the structure of the molecule Fe2. The result showed that the ground electronic state for the molecule Fe2 is nonet state instead of septet state, which indicates that there is a spin polarization effect in the molecule Fe2, i.e., in which there are 8 parallel spin electrons.In this case, the number of the unpaired d-orbit electrons is the largest, and these electrons occupy different spatial orbitals so that the energy of the molecule Fe2 is minimized. Meanwhile, the spin pollution was not found because the wave functions of the ground state do not mix with those of the higher energy states. In addition, the Murrell-Sorbie potential functions with the parameters for the ground electronic state and other exited electronic states of the molecule Fe2 were derived. The dissociation energy, equilibrium bond length and the vibration frequency for the ground electronic state of the molecule Fe2 are 3.5522 eV, 0.2137 nm and 292.914 cm^-1, respectively. Its force constants f2, f3 and f4 are 1.4115×1^02 a J/nm^2, -37.1751×103^aJ/nm^3 and 98.7596× 10^4 a J/nm^4, respectively. The other spectroscopic parameters ωexe, Be and αe for the ground electronic state of Fe2 are 0.3522, 0.0345 and 0.4963× 10^-4 cm^-1, respectively.
基金Project supported by the National Natural Science Foundation of China （Grant Nos 60621063, 10334110, 10425416, 10634020 and 60478047）, the National Key Basic Research Special Foundation of China （Grant No G1999075206）, and the National Hi-Tech ICF Programme.
文摘Two interacting light filaments with different initial phases propagating in air are investigated numerically by using a ray tracing method. The evolution of the rays of a filament is governed by a potential field. During propagation, the two potential wells of the two filaments can merge into one or repel each other, depending on the initial phase difference between the two filaments. The study provides a simple description of the interacting filaments.
文摘We have studied the effects of the finite range on the fusion and/or breakup of ^6He^＋238U and ^11Li＋^208pb Pb dynamic polarization potential approach. It has been found of the interaction between the fragments of the projectile systems at near barrier energies within the framework of that at near barrier energies the maximum flux is lost to the breakup channel and at energies well above the Coulomb barrier the fusion coupled with the breakup channel opens up, initially with sharp rise and later becoming saturated at energy nearly twice of the Coulomb barrier. Further, it is found that the breakup cross section increases with the increasing range of the interaction between the fragments of the projectile while the fusion coupled with the breakup channel cross section decreases with the increasing range.
