Y2002-63084-209 0212497Cu/Cr,Cu/V 和 Cu/Ta 多层中 Cu 的自对准钝化=Selfaligned passivation of Cu in Cu/Cr,Cu/V,and Cu/Tamultilayers[会,英]/Iraji-Zad,A.& Vashaei,Z.//ICM2000 Proceedings of the Twelfth International ...Y2002-63084-209 0212497Cu/Cr,Cu/V 和 Cu/Ta 多层中 Cu 的自对准钝化=Selfaligned passivation of Cu in Cu/Cr,Cu/V,and Cu/Tamultilayers[会,英]/Iraji-Zad,A.& Vashaei,Z.//ICM2000 Proceedings of the Twelfth International Conference0n Microelectronics.—209～212(PE)展开更多
The low-temperature measurement of Hall effect of the two-dimensional electron system in a double-layered gated Si-δ-doped GaAs is presented.A complex peculiar nonlinear dependence of the depletion on gate voltage i...The low-temperature measurement of Hall effect of the two-dimensional electron system in a double-layered gated Si-δ-doped GaAs is presented.A complex peculiar nonlinear dependence of the depletion on gate voltage is observed.The nonlinearity is also explained on the basis of the assumption that the double-capacity model consists of two δ-doped two-dimensional electron layers and a metallic gate,and the experimental result that the electron mobility is linear with the electron density on a log-log scale.展开更多
文摘Y2002-63084-209 0212497Cu/Cr,Cu/V 和 Cu/Ta 多层中 Cu 的自对准钝化=Selfaligned passivation of Cu in Cu/Cr,Cu/V,and Cu/Tamultilayers[会,英]/Iraji-Zad,A.& Vashaei,Z.//ICM2000 Proceedings of the Twelfth International Conference0n Microelectronics.—209～212(PE)
文摘The low-temperature measurement of Hall effect of the two-dimensional electron system in a double-layered gated Si-δ-doped GaAs is presented.A complex peculiar nonlinear dependence of the depletion on gate voltage is observed.The nonlinearity is also explained on the basis of the assumption that the double-capacity model consists of two δ-doped two-dimensional electron layers and a metallic gate,and the experimental result that the electron mobility is linear with the electron density on a log-log scale.
