The electrical performance including breakdown voltage and turn-off speed of SOI-LIGBT is improved by incorporating a resistive field plate (RFP) and a p-MOSFET.The p-MOSFET is controlled by a signal detected from a p...The electrical performance including breakdown voltage and turn-off speed of SOI-LIGBT is improved by incorporating a resistive field plate (RFP) and a p-MOSFET.The p-MOSFET is controlled by a signal detected from a point of the RFP.During the turning-off of the IGBT,the p-MOSFET is turned on,which provides a channel for the excessive carriers to flow out of the drift region and prevents the carriers from being injected into the drift region.At the same time,the electric field affected by the RFP makes the excessive carriers flow through a wider region,which almost eliminates the second phase of the turning-off of the SOI-LIGBT caused by the substrate bias.Faster turn-off speed is achieved by above two factors.During the on state of the IGBT,the p-MOSFET is off,which leads to an on-state performance like normal one.At least,the increase of the breakdown voltage for 25% and the decrease of the turn-off time for 65% can be achieved by this structure as can be verified by the numerical simulation results.展开更多
Breakdown formation in the explosive-emission sources is related to the interelectrode gap filling with the cathode and anode plasma generated at the anode and in the gap under the beam influence. Under conditions of ...Breakdown formation in the explosive-emission sources is related to the interelectrode gap filling with the cathode and anode plasma generated at the anode and in the gap under the beam influence. Under conditions of saturation of the cathode plasma emissive ability as well as when the measures on the emission boundary stabilization are taken, the anode plasma has the deciding part in the formation of the electron source breakdown. The paper presents the results of the anode plasma investigations obtained to solve the problem of the electron beam length increase in the explosive-emission sources. The data concerning the gas release from the anode, the mechanism of the anode plasma formation and the anode plasma influence on the parameters of the generated electron beam are presented as well.展开更多
Breakdown formation in an explosive-emission electron source is related to the interelectrode gap filling with plasma propagating from the cathode and formed at the anode and in the interelectrode gap under the electr...Breakdown formation in an explosive-emission electron source is related to the interelectrode gap filling with plasma propagating from the cathode and formed at the anode and in the interelectrode gap under the electron beam action. Plasma anode is used to increase the beam current density. Preliminary interelectrode gap filling with plasma in the explosive-emission source decreases the influence of uncontrolled plasma arrival from the anode on the diode processes, promotes current density increase and duration of generated electron beams. The paper considers the influence of the cathode geometry on the breakdown formation in the plasma-anode explosive-emission electron source. The data on obtaining of microsecond electron beams with current density of 30 A/cm^2 and 1.5-2 kA/cm^2 are presented.展开更多
文摘The electrical performance including breakdown voltage and turn-off speed of SOI-LIGBT is improved by incorporating a resistive field plate (RFP) and a p-MOSFET.The p-MOSFET is controlled by a signal detected from a point of the RFP.During the turning-off of the IGBT,the p-MOSFET is turned on,which provides a channel for the excessive carriers to flow out of the drift region and prevents the carriers from being injected into the drift region.At the same time,the electric field affected by the RFP makes the excessive carriers flow through a wider region,which almost eliminates the second phase of the turning-off of the SOI-LIGBT caused by the substrate bias.Faster turn-off speed is achieved by above two factors.During the on state of the IGBT,the p-MOSFET is off,which leads to an on-state performance like normal one.At least,the increase of the breakdown voltage for 25% and the decrease of the turn-off time for 65% can be achieved by this structure as can be verified by the numerical simulation results.
文摘Breakdown formation in the explosive-emission sources is related to the interelectrode gap filling with the cathode and anode plasma generated at the anode and in the gap under the beam influence. Under conditions of saturation of the cathode plasma emissive ability as well as when the measures on the emission boundary stabilization are taken, the anode plasma has the deciding part in the formation of the electron source breakdown. The paper presents the results of the anode plasma investigations obtained to solve the problem of the electron beam length increase in the explosive-emission sources. The data concerning the gas release from the anode, the mechanism of the anode plasma formation and the anode plasma influence on the parameters of the generated electron beam are presented as well.
文摘Breakdown formation in an explosive-emission electron source is related to the interelectrode gap filling with plasma propagating from the cathode and formed at the anode and in the interelectrode gap under the electron beam action. Plasma anode is used to increase the beam current density. Preliminary interelectrode gap filling with plasma in the explosive-emission source decreases the influence of uncontrolled plasma arrival from the anode on the diode processes, promotes current density increase and duration of generated electron beams. The paper considers the influence of the cathode geometry on the breakdown formation in the plasma-anode explosive-emission electron source. The data on obtaining of microsecond electron beams with current density of 30 A/cm^2 and 1.5-2 kA/cm^2 are presented.
