Hot carrier effects of p MOSFETs with different oxide thicknesses are studied in low gate voltage range.All electrical parameters follow a power law relationship with stress time,but degradation slope is dependent ...Hot carrier effects of p MOSFETs with different oxide thicknesses are studied in low gate voltage range.All electrical parameters follow a power law relationship with stress time,but degradation slope is dependent on gate voltage.For the devices with thicker oxides,saturated drain current degradation has a close relationship with the product of gate current and electron fluence.For small dimensional devices,saturated drain current degradation has a close relationship with the electron fluence.This degradation model is valid for p MOSFETs with 0 25μm channel length and different gate oxide thicknesses.展开更多
A gate-all-around cylindrical （GAAC） transistor for sub-10nm scaling is proposed. The GAAC transistor device physics,TCAD simulation,and proposed fabrication procedure are reported for the first time. Among all othe...A gate-all-around cylindrical （GAAC） transistor for sub-10nm scaling is proposed. The GAAC transistor device physics,TCAD simulation,and proposed fabrication procedure are reported for the first time. Among all other novel FinFET devices, the gate-all-around cylindrical device can be particularly applied for reducing the problems of the conventional multi-gate FinFET and improving the device performance and the scale down capability. According to our simulation,the gate-all-around cylindrical device shows many benefits over conventional multi-gate FinFET, including gate-all- around rectangular （GAAR） devices. With gate-all-around cylindrical architecture,the transistor is controlled by an essen- tially infinite number of gates surrounding the entire cylinder-shaped channel. The electrical integrity within the channel is improved by reducing the leakage current due to the non-symmetrical field accumulation such as the corner effect. The proposed fabrication procedures for devices having GAAC device architecture are also discussed. The method is characterized by its simplicity and full compatibility with conventional planar CMOS technology.展开更多
A novel opening loop structure of fiber Bragg grating is proposed. From the analysis of the strain distribution at the side of the opening loop we found that the structure can be used as a new setup to linearly tune t...A novel opening loop structure of fiber Bragg grating is proposed. From the analysis of the strain distribution at the side of the opening loop we found that the structure can be used as a new setup to linearly tune the central wavelength of the fiber Bragg gating. The setup is an uniform fiber Bragg grating bonded to the side of a beam which can produce an uniform strain. The experimental results show that the wavelength range of linear tuning is about 5.0 nm,the sensitivity is about 3. ]8 nm/N and the linearity is up to 0. 9988.The largest tuning range of the setup is about 11. 0 nm while the linearity is 0. 9941 in the ranae of 0 and 11. 0 nm. ExPerimental results are in good agreement with our theoretical analysis.展开更多
A 33×33 thermo-optically tunable arrayed-waveguide-grating (AWG) has been fabricated by using the poly (2,3,4,5,6-pentafluorostyrene-co-glycidylmethacrylate) (PFS-co-GMA).The technological process of the fabricat...A 33×33 thermo-optically tunable arrayed-waveguide-grating (AWG) has been fabricated by using the poly (2,3,4,5,6-pentafluorostyrene-co-glycidylmethacrylate) (PFS-co-GMA).The technological process of the fabrication of the device is described,and the measured results are presented.The measured spacing of the wavelength channel is about 0.81 nm,the 3-dB bandwidth is about 0.35 nm,the crosstalk is about -20 dB,and the insertion loss is between 10.4 dB for the centre port and 11.9 dB for the edge port.The measured thermo-optical tunable shift is about -0.12 nm/K.The measured center wavelength is 1 545.21-1 551.81 nm in the temperature range from 10℃ to 65℃,and the tuning range is 6.6 nm.展开更多
Herein we extract all the frequency-dependent coupling-of-modes （COM） parameters, which will be used to the rapid simulation and optimal design of surface acoustic wave （SAW） devices. FEM/BEM is used to calculate ...Herein we extract all the frequency-dependent coupling-of-modes （COM） parameters, which will be used to the rapid simulation and optimal design of surface acoustic wave （SAW） devices. FEM/BEM is used to calculate the exact field distributions of forward and backward surface acoustic waves within a finite-length periodic grating at every frequency. The middle compo- nent of the grating, regarded as a periodic structure, is selected to be investigated which can satisfy the presupposition of the COM model. From these field distributions, the values of P-matrix elements of one cell are calculated. The COM parameters taken as functions of frequency are accurately obtained. Specifically, the frequency-dependent relationships of reflection coefficient and propagation velocity are obtained independently. Using the resultant COM parameters, a one-port resonator on the substrate of 128°YX-LiNbO3 is simulated and the admittance curve shows good agreement with the simulating results using FEM/BEM. These results verify the validity and accuracy of this method.展开更多
An asymmetric fiber （Fabry-Perot, F-P） interferometric cavity with the good linearity and wide dynamic range was successfully designed based on the optical thin film characteristic matrix theory; by adjusting the ma...An asymmetric fiber （Fabry-Perot, F-P） interferometric cavity with the good linearity and wide dynamic range was successfully designed based on the optical thin film characteristic matrix theory; by adjusting the material of two different thin metallic layers, the asymmetric fiber F-P interferometric cavity was fabricated by depositing the multi-layer thin films on the optical fiber＇s end face. The asymmetric F-P cavity has the extensive potential application. In this paper, the demodulation method for the wavelength shift of the fiber Bragg grating （FBG） sensor based on the F-P cavity is demonstrated, and a theoretical formula is obtained. And the experimental results coincide well with the computational results obtained from the theoretical model.展开更多
文摘Hot carrier effects of p MOSFETs with different oxide thicknesses are studied in low gate voltage range.All electrical parameters follow a power law relationship with stress time,but degradation slope is dependent on gate voltage.For the devices with thicker oxides,saturated drain current degradation has a close relationship with the product of gate current and electron fluence.For small dimensional devices,saturated drain current degradation has a close relationship with the electron fluence.This degradation model is valid for p MOSFETs with 0 25μm channel length and different gate oxide thicknesses.
文摘A gate-all-around cylindrical （GAAC） transistor for sub-10nm scaling is proposed. The GAAC transistor device physics,TCAD simulation,and proposed fabrication procedure are reported for the first time. Among all other novel FinFET devices, the gate-all-around cylindrical device can be particularly applied for reducing the problems of the conventional multi-gate FinFET and improving the device performance and the scale down capability. According to our simulation,the gate-all-around cylindrical device shows many benefits over conventional multi-gate FinFET, including gate-all- around rectangular （GAAR） devices. With gate-all-around cylindrical architecture,the transistor is controlled by an essen- tially infinite number of gates surrounding the entire cylinder-shaped channel. The electrical integrity within the channel is improved by reducing the leakage current due to the non-symmetrical field accumulation such as the corner effect. The proposed fabrication procedures for devices having GAAC device architecture are also discussed. The method is characterized by its simplicity and full compatibility with conventional planar CMOS technology.
基金Supported by the National 863 High Technology Project underGrant No.2002AA313110 ,the Science and Technology Innova-tion Foundation,the Students Innovation Foundation of NankaiUniversity,P.R.China .
文摘A novel opening loop structure of fiber Bragg grating is proposed. From the analysis of the strain distribution at the side of the opening loop we found that the structure can be used as a new setup to linearly tune the central wavelength of the fiber Bragg gating. The setup is an uniform fiber Bragg grating bonded to the side of a beam which can produce an uniform strain. The experimental results show that the wavelength range of linear tuning is about 5.0 nm,the sensitivity is about 3. ]8 nm/N and the linearity is up to 0. 9988.The largest tuning range of the setup is about 11. 0 nm while the linearity is 0. 9941 in the ranae of 0 and 11. 0 nm. ExPerimental results are in good agreement with our theoretical analysis.
文摘A 33×33 thermo-optically tunable arrayed-waveguide-grating (AWG) has been fabricated by using the poly (2,3,4,5,6-pentafluorostyrene-co-glycidylmethacrylate) (PFS-co-GMA).The technological process of the fabrication of the device is described,and the measured results are presented.The measured spacing of the wavelength channel is about 0.81 nm,the 3-dB bandwidth is about 0.35 nm,the crosstalk is about -20 dB,and the insertion loss is between 10.4 dB for the centre port and 11.9 dB for the edge port.The measured thermo-optical tunable shift is about -0.12 nm/K.The measured center wavelength is 1 545.21-1 551.81 nm in the temperature range from 10℃ to 65℃,and the tuning range is 6.6 nm.
基金supported by the National Natural Science Foundation of China(Grant Nos. 10774073 and 11174143)
文摘Herein we extract all the frequency-dependent coupling-of-modes （COM） parameters, which will be used to the rapid simulation and optimal design of surface acoustic wave （SAW） devices. FEM/BEM is used to calculate the exact field distributions of forward and backward surface acoustic waves within a finite-length periodic grating at every frequency. The middle compo- nent of the grating, regarded as a periodic structure, is selected to be investigated which can satisfy the presupposition of the COM model. From these field distributions, the values of P-matrix elements of one cell are calculated. The COM parameters taken as functions of frequency are accurately obtained. Specifically, the frequency-dependent relationships of reflection coefficient and propagation velocity are obtained independently. Using the resultant COM parameters, a one-port resonator on the substrate of 128°YX-LiNbO3 is simulated and the admittance curve shows good agreement with the simulating results using FEM/BEM. These results verify the validity and accuracy of this method.
文摘An asymmetric fiber （Fabry-Perot, F-P） interferometric cavity with the good linearity and wide dynamic range was successfully designed based on the optical thin film characteristic matrix theory; by adjusting the material of two different thin metallic layers, the asymmetric fiber F-P interferometric cavity was fabricated by depositing the multi-layer thin films on the optical fiber＇s end face. The asymmetric F-P cavity has the extensive potential application. In this paper, the demodulation method for the wavelength shift of the fiber Bragg grating （FBG） sensor based on the F-P cavity is demonstrated, and a theoretical formula is obtained. And the experimental results coincide well with the computational results obtained from the theoretical model.
