云南暗弱天体光谱及成像仪(Yunnan Faint-Object Spectrograph and Camera,YFOSC)是一台能够快速切换工作模式,进行天文成像及光谱观测的仪器。其中长缝光谱作为该仪器的主要光谱观测模式广泛应用于点源以及面源的分光测量研究。通过测...云南暗弱天体光谱及成像仪(Yunnan Faint-Object Spectrograph and Camera,YFOSC)是一台能够快速切换工作模式,进行天文成像及光谱观测的仪器。其中长缝光谱作为该仪器的主要光谱观测模式广泛应用于点源以及面源的分光测量研究。通过测量该模式下YFOSC系统的波长响应曲线,各块光栅的波长范围,并对定标灯谱进行波长证认,同时在考虑大气吸收以及望远镜效率的情况下给出了曝光时间曲线,为观测者更好地使用该仪器提供参考。最后以近期拍摄的一条超新星光谱为例,介绍长缝光谱模式的实际观测能力。展开更多
Methods for improving the high current performance of static induction transistor （SIT） are presented.Many important factors,such as ＂trans-conductance per unit channel width＂ θ, ＂gate efficiency＂ η, ＂sensiti...Methods for improving the high current performance of static induction transistor （SIT） are presented.Many important factors,such as ＂trans-conductance per unit channel width＂ θ, ＂gate efficiency＂ η, ＂sensitivity factor＂ D,and ＂intrinsic static gain＂ μ0,that may be used to describe different aspects of the electrical performance of an SIT are first defined.The dependences of electrical parameters on the structure and technological process of an SIT are revealed for the first time.The packaging technologies are so important for the improvement of high power performance of SITs that they must be paid attention.Testing techniques and circuits for measuring frequency and power parameters of SITs are designed and constructed.The influence of packaging processes in technological practice on the electrical performance of SITs is also discussed in depth.展开更多
A high performance VHF power VDMOSFET,ap plying to the mobile communications,is developed,which can deliver an output power of 12W with the drain efficiency of 70% as well as the gain of 12dB at a low supply voltag...A high performance VHF power VDMOSFET,ap plying to the mobile communications,is developed,which can deliver an output power of 12W with the drain efficiency of 70% as well as the gain of 12dB at a low supply voltage of 12V and 175MHz.It is fabricated by using the terraced gat e structure and refractory molybdenum (Mo) gate technology.展开更多
0.5μm-gate-length lateral double-diffused metal-oxide-semiconductor field-effect transistors （LDMOSFETs） with low barrier body contact （LBBC） and body tied to the source （BTS） were fabricated on silicon-on-insu...0.5μm-gate-length lateral double-diffused metal-oxide-semiconductor field-effect transistors （LDMOSFETs） with low barrier body contact （LBBC） and body tied to the source （BTS） were fabricated on silicon-on-insulator （SOI） substrates. The back-gate effects on front-channel subthreshold characteristics, on-resistance, and off-state breakdown characteristics of these devices are studied in detail. The LDMOSFETs with the LBBC structure show less back-gate effect than those with the BTS structure due to better control of the floating body effect and suppression of the parasitic backchannel leakage current. A model for the SOl LDMOSFETs has been given,including the front- and back-channel conductions as well as the bias-dependent series resistance.展开更多
文摘云南暗弱天体光谱及成像仪(Yunnan Faint-Object Spectrograph and Camera,YFOSC)是一台能够快速切换工作模式,进行天文成像及光谱观测的仪器。其中长缝光谱作为该仪器的主要光谱观测模式广泛应用于点源以及面源的分光测量研究。通过测量该模式下YFOSC系统的波长响应曲线,各块光栅的波长范围,并对定标灯谱进行波长证认,同时在考虑大气吸收以及望远镜效率的情况下给出了曝光时间曲线,为观测者更好地使用该仪器提供参考。最后以近期拍摄的一条超新星光谱为例,介绍长缝光谱模式的实际观测能力。
文摘Methods for improving the high current performance of static induction transistor （SIT） are presented.Many important factors,such as ＂trans-conductance per unit channel width＂ θ, ＂gate efficiency＂ η, ＂sensitivity factor＂ D,and ＂intrinsic static gain＂ μ0,that may be used to describe different aspects of the electrical performance of an SIT are first defined.The dependences of electrical parameters on the structure and technological process of an SIT are revealed for the first time.The packaging technologies are so important for the improvement of high power performance of SITs that they must be paid attention.Testing techniques and circuits for measuring frequency and power parameters of SITs are designed and constructed.The influence of packaging processes in technological practice on the electrical performance of SITs is also discussed in depth.
文摘A high performance VHF power VDMOSFET,ap plying to the mobile communications,is developed,which can deliver an output power of 12W with the drain efficiency of 70% as well as the gain of 12dB at a low supply voltage of 12V and 175MHz.It is fabricated by using the terraced gat e structure and refractory molybdenum (Mo) gate technology.
基金the National Natural Science Foundation of China(No.60576051)the State Key Development Program for Basic Research of China(No.2006CB3027-01)~~
文摘0.5μm-gate-length lateral double-diffused metal-oxide-semiconductor field-effect transistors （LDMOSFETs） with low barrier body contact （LBBC） and body tied to the source （BTS） were fabricated on silicon-on-insulator （SOI） substrates. The back-gate effects on front-channel subthreshold characteristics, on-resistance, and off-state breakdown characteristics of these devices are studied in detail. The LDMOSFETs with the LBBC structure show less back-gate effect than those with the BTS structure due to better control of the floating body effect and suppression of the parasitic backchannel leakage current. A model for the SOl LDMOSFETs has been given,including the front- and back-channel conductions as well as the bias-dependent series resistance.
