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低阻α-Ta栅电极材料的制备与研究 被引量:2
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作者 王刚 杨柏梁 +2 位作者 赵超 刘宏宇 黄锡珉 《液晶与显示》 CAS CSCD 2000年第1期28-34,共7页
研究了溅射Ta膜的电学和结构特性与N2气分压的关系,并确定了电学性能稳定的低阻α-Ta薄膜(电阻率34μΩ·cm)的制备工艺条件。
关键词 X射线衍射 方块电阻 α-Ta 栅电极材料 薄膜
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Ultrathin 2D ternary Bi_(2)Te_(2)Se flakes for fast-response photodetectors with gate-tunable responsivity 被引量:1
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作者 Peng Luo Ke Pei +5 位作者 Fakun Wang Xin Feng Huiqiao Li Xitao Liu Junhua Luo Tianyou Zhai 《Science China Materials》 SCIE EI CAS CSCD 2021年第12期3017-3026,共10页
Two-dimensional(2D) ternary materials have sprung up in a broad variety of optoelectronic applications due to their robust degree of freedom to design the physical properties of the materials through adjusting the sto... Two-dimensional(2D) ternary materials have sprung up in a broad variety of optoelectronic applications due to their robust degree of freedom to design the physical properties of the materials through adjusting the stoichiometric ratio. However, the controlled growth of high-quality 2D ternary materials with good chemical stoichiometry remains challenging, which severely impedes their further development and future device applications. Herein, we synthesize ternary Bi_(2)Te_(2)Se(BTS) flakes with a thickness down to 4 nm and a lateral dimension about 60 μm by an atmospheric-pressure solid source thermal evaporation method on a mica substrate. The phonon vibration and electrical transportation of 2D BTS are respectively investigated by temperature-dependent Raman spectrum and conductivity measurements. Furthermore, the photodetector based on 2D BTS exhibits excellent performance with a high light on/off ratio of 1300(365 nm), a wide spectral response range from 365 to 980 nm, and an ultra-fast response speed up to 2 μs. In addition, its electrical and photoelectric properties can be modulated by the gate voltage, offering an improved infrared responsivity to 2.74 A W^(-1) and an on/off ratio of 2266 under 980 nm. This work introduces an effective approach to obtain 2D BTS flakes and demonstrates their excellent prospects in optoelectronics. 展开更多
关键词 2D materials ternary materials Bi_(2)Te_(2)Se PHOTODETECTORS field-effect transistors
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