The large refractive index difference between Si and SiO2 makes it possible to realize ultrasmall photonic integrated circuits. A 5×5 ultracompact arrayed waveguide grating multiplexer based on 500×250 nm Si...The large refractive index difference between Si and SiO2 makes it possible to realize ultrasmall photonic integrated circuits. A 5×5 ultracompact arrayed waveguide grating multiplexer based on 500×250 nm Si nanowire waveguides is designed and fabricated by using the technologies of E-beam writing and amorphous-Si deposition. The mea- sured channel spacing is about 1.5 nm (close to the design value) and the channel crosstalk is about –8 dB.展开更多
A 25-channel 200 GHz arrayed waveguide grating （AWG） based on Si nanowire wavegnides is designed, simulated and fab- ricated. Transfer function method is used in the simulation and error analysis of AWG with width f...A 25-channel 200 GHz arrayed waveguide grating （AWG） based on Si nanowire wavegnides is designed, simulated and fab- ricated. Transfer function method is used in the simulation and error analysis of AWG with width fluctuations. The 25-channel 200 GHz AWG exhibits central channel insertion loss of 6.7 dB, crosstalk of-13 dB, and central wavelength of 1 560.55 nm. The error analysis can explain the experimental results of 25-channel 200 GHz AWG well. By using deep ul- traviolet lithography （DUV） and inductively coupled plasma etching （ICP） technologies, the devices are fabricated on sili- con-on-insulator （SOI） substrate.展开更多
文摘The large refractive index difference between Si and SiO2 makes it possible to realize ultrasmall photonic integrated circuits. A 5×5 ultracompact arrayed waveguide grating multiplexer based on 500×250 nm Si nanowire waveguides is designed and fabricated by using the technologies of E-beam writing and amorphous-Si deposition. The mea- sured channel spacing is about 1.5 nm (close to the design value) and the channel crosstalk is about –8 dB.
基金supported by the National Key Research and Development Program of China(No.2016YFB0402504)the National Natural Science Foundation of China(Nos.61435013 and 61405188)
文摘A 25-channel 200 GHz arrayed waveguide grating （AWG） based on Si nanowire wavegnides is designed, simulated and fab- ricated. Transfer function method is used in the simulation and error analysis of AWG with width fluctuations. The 25-channel 200 GHz AWG exhibits central channel insertion loss of 6.7 dB, crosstalk of-13 dB, and central wavelength of 1 560.55 nm. The error analysis can explain the experimental results of 25-channel 200 GHz AWG well. By using deep ul- traviolet lithography （DUV） and inductively coupled plasma etching （ICP） technologies, the devices are fabricated on sili- con-on-insulator （SOI） substrate.
