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High Performance VHF Power VDMOSFETs for Low Voltage Applications
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作者 刘英坤 梁春广 +3 位作者 邓建国 张颖秋 郎秀兰 李思渊 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2001年第8期975-978,共4页
A high performance VHF power VDMOSFET,ap plying to the mobile communications,is developed,which can deliver an output power of 12W with the drain efficiency of 70% as well as the gain of 12dB at a low supply voltag... A high performance VHF power VDMOSFET,ap plying to the mobile communications,is developed,which can deliver an output power of 12W with the drain efficiency of 70% as well as the gain of 12dB at a low supply voltage of 12V and 175MHz.It is fabricated by using the terraced gat e structure and refractory molybdenum (Mo) gate technology. 展开更多
关键词 low voltage terraced gate structure Mo gate te chnology VHF power VDMOSFET
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