直接数字平板X线成像系统(Director Digital Panel radigraphy DDR)是近几年才发展起来的全新的数字化成像技术。平板数字探测器研制成功并应用临床在成像技术上是一个飞跃。数字探测器代替了传统X线设备由影像增强器、摄像头、光学系...直接数字平板X线成像系统(Director Digital Panel radigraphy DDR)是近几年才发展起来的全新的数字化成像技术。平板数字探测器研制成功并应用临床在成像技术上是一个飞跃。数字探测器代替了传统X线设备由影像增强器、摄像头、光学系统和模数转换器构成的影像链。由直接数字化代替传统的模数转换,因而避免了影像链上诸多环节对影像产生的影响,减少了图像的噪音和失真,展开更多
Here, we report a trap-assisted photomultiplication (PM) phenomenon in solution-processed organic photodetectors (OPDs) using poly(3-hexylthiophene) (P3HT): indene-C60 bisadduct (ICBA) as the active layer. ...Here, we report a trap-assisted photomultiplication (PM) phenomenon in solution-processed organic photodetectors (OPDs) using poly(3-hexylthiophene) (P3HT): indene-C60 bisadduct (ICBA) as the active layer. The maximum external quantum efficiency (EQE) is 685% for the device with 2% ICBA doping ratio, which is much higher than that of OPDs with P3HT:ICBA (1:1) as the active layer. The PM phenomenon is attributed to the hole tunneling injection assisted by trapped electron in ICBA near A1 cathode, which can be demonstrated from the EQE spectra and transient photocurrent curves of OPDs with different ICBA doping ratios.展开更多
文摘直接数字平板X线成像系统(Director Digital Panel radigraphy DDR)是近几年才发展起来的全新的数字化成像技术。平板数字探测器研制成功并应用临床在成像技术上是一个飞跃。数字探测器代替了传统X线设备由影像增强器、摄像头、光学系统和模数转换器构成的影像链。由直接数字化代替传统的模数转换,因而避免了影像链上诸多环节对影像产生的影响,减少了图像的噪音和失真,
基金supported by the National Training Program of Innovation and Entrepreneurship for Undergraduates,Fundamental Research Funds for the Central Universities(Grant No.2014JBZ017)National Natural Science Foundation of China(Grant No.613770029)Beijing Natural Science Foundation(Grant No.2122050)
文摘Here, we report a trap-assisted photomultiplication (PM) phenomenon in solution-processed organic photodetectors (OPDs) using poly(3-hexylthiophene) (P3HT): indene-C60 bisadduct (ICBA) as the active layer. The maximum external quantum efficiency (EQE) is 685% for the device with 2% ICBA doping ratio, which is much higher than that of OPDs with P3HT:ICBA (1:1) as the active layer. The PM phenomenon is attributed to the hole tunneling injection assisted by trapped electron in ICBA near A1 cathode, which can be demonstrated from the EQE spectra and transient photocurrent curves of OPDs with different ICBA doping ratios.