为解决锗(Ge)基硫系玻璃光纤损耗相对较高等问题,采用物理和化学除杂相结合的工艺,制备出了高纯Ge28Sb12Se60硫系玻璃,显著降低了红外波段C、H、O杂质吸收。应用真空高速旋转法,制备出了壁厚均匀、光学质量优异的Ge28Sb12Se58S2硫系玻...为解决锗(Ge)基硫系玻璃光纤损耗相对较高等问题,采用物理和化学除杂相结合的工艺,制备出了高纯Ge28Sb12Se60硫系玻璃,显著降低了红外波段C、H、O杂质吸收。应用真空高速旋转法,制备出了壁厚均匀、光学质量优异的Ge28Sb12Se58S2硫系玻璃皮管。采用棒管法拉制出外径50±1.5μm、具有芯包结构的Ge-Sb-Se硫系玻璃光纤,光纤弯曲半径为5 mm,红外波段吸收基线为2.2 d B/m(2.87μm和4.5μm处除外)。展开更多
A variable structure based control scheme was proposed for Active Queue Management(AQM) by using sliding model algorithm and reach law method. This approach aims to address the tradeoff between good performance and ro...A variable structure based control scheme was proposed for Active Queue Management(AQM) by using sliding model algorithm and reach law method. This approach aims to address the tradeoff between good performance and robustness with respect to the uncertainties of the round-trip time and the number of active connections. Ns simulations results show that the proposed design significantly outperforms the peer AQM schemes in terms of fluctuation in the queue length, packet throughput, and loss ratio. The conclusion is that proposed scheme is in favor of the achievement to AQM objectives due to its good transient and steady performance.展开更多
Monocrystal Sn nanorods encapsulated in the multi-walled carbon nanotubes(Sn@CNT NRs), were fabricated by a facile arc-discharge plasma process, using bulk Sn as the raw target and methane as the gaseous carbon source...Monocrystal Sn nanorods encapsulated in the multi-walled carbon nanotubes(Sn@CNT NRs), were fabricated by a facile arc-discharge plasma process, using bulk Sn as the raw target and methane as the gaseous carbon source. The typical Sn@CNT NRs are 40–90 nm in diameter and400–500 nm in length. The CNTs protect the inner Sn nanorods from oxidation. Temperature dependent I–V curve and electronic resistance reveal that the dielectric behavior of Sn@CNT NRs is attributed to the multi-wall CNTs shell and follows Mott-David variable range hopping [ln R(T)∝T-1/4]model above the superconducting critical temperature of3.69 K, with semiconductor–superconductor transition(SST).Josephson junction of Sn/CNT/Sn layered structure is responsible for the superconducting behavior of Sn@CNT NRs.展开更多
文摘为解决锗(Ge)基硫系玻璃光纤损耗相对较高等问题,采用物理和化学除杂相结合的工艺,制备出了高纯Ge28Sb12Se60硫系玻璃,显著降低了红外波段C、H、O杂质吸收。应用真空高速旋转法,制备出了壁厚均匀、光学质量优异的Ge28Sb12Se58S2硫系玻璃皮管。采用棒管法拉制出外径50±1.5μm、具有芯包结构的Ge-Sb-Se硫系玻璃光纤,光纤弯曲半径为5 mm,红外波段吸收基线为2.2 d B/m(2.87μm和4.5μm处除外)。
文摘A variable structure based control scheme was proposed for Active Queue Management(AQM) by using sliding model algorithm and reach law method. This approach aims to address the tradeoff between good performance and robustness with respect to the uncertainties of the round-trip time and the number of active connections. Ns simulations results show that the proposed design significantly outperforms the peer AQM schemes in terms of fluctuation in the queue length, packet throughput, and loss ratio. The conclusion is that proposed scheme is in favor of the achievement to AQM objectives due to its good transient and steady performance.
基金financially supported by the National Natural Science Foundation of China(51331006 and 51271044)
文摘Monocrystal Sn nanorods encapsulated in the multi-walled carbon nanotubes(Sn@CNT NRs), were fabricated by a facile arc-discharge plasma process, using bulk Sn as the raw target and methane as the gaseous carbon source. The typical Sn@CNT NRs are 40–90 nm in diameter and400–500 nm in length. The CNTs protect the inner Sn nanorods from oxidation. Temperature dependent I–V curve and electronic resistance reveal that the dielectric behavior of Sn@CNT NRs is attributed to the multi-wall CNTs shell and follows Mott-David variable range hopping [ln R(T)∝T-1/4]model above the superconducting critical temperature of3.69 K, with semiconductor–superconductor transition(SST).Josephson junction of Sn/CNT/Sn layered structure is responsible for the superconducting behavior of Sn@CNT NRs.
