To determine the dynamic influence range of emergencies under special events, the spacial and temporal characteristics of the traffic flow are studied by simulation based on the cell transmission model （CTM）. Based ...To determine the dynamic influence range of emergencies under special events, the spacial and temporal characteristics of the traffic flow are studied by simulation based on the cell transmission model （CTM）. Based on the traffic management measures used under special events, a semi-dynamic assignment algorithm is proposed, which is combined with an algorithm for logit multi-path traffic assignment and the CTM. In a simple calculation network, the spacial and temporal characteristics of traffic flows which vary with different traffic management schemes are studied, and a method to obtain the influence range of emergency is proposed by computing the jam time of the intersections. By contrasting the average delay of each vehicle, the dissipation effect is studied under two different traffic management schemes. The example shows that the spatial and temporal variety of the traffic flow can be easily simulated and the influence range of emergency can be confirmed by the method based on the CTM. The proposed method provides a new idea for decision-making on traffic management under emergency under special events.展开更多
Hot carrier effects of p MOSFETs with different oxide thicknesses are studied in low gate voltage range.All electrical parameters follow a power law relationship with stress time,but degradation slope is dependent ...Hot carrier effects of p MOSFETs with different oxide thicknesses are studied in low gate voltage range.All electrical parameters follow a power law relationship with stress time,but degradation slope is dependent on gate voltage.For the devices with thicker oxides,saturated drain current degradation has a close relationship with the product of gate current and electron fluence.For small dimensional devices,saturated drain current degradation has a close relationship with the electron fluence.This degradation model is valid for p MOSFETs with 0 25μm channel length and different gate oxide thicknesses.展开更多
Infra Works是一款适用于基础设施项目的规划和方案设计的设计解决方案软件。软件可帮助设计人员创建包含丰富数据的地理信息模型,使设计人员能够在真实环境中规划和设计基础设施项目。项目地理模型是路线前期进行多方案研究的基础,本...Infra Works是一款适用于基础设施项目的规划和方案设计的设计解决方案软件。软件可帮助设计人员创建包含丰富数据的地理信息模型,使设计人员能够在真实环境中规划和设计基础设施项目。项目地理模型是路线前期进行多方案研究的基础,本文探讨使用infraworks软件快速搭建大范围地理信息模型的方法。展开更多
基金The National High Technology Research and Development Program of China(863 Program)(No.2007AA11Z210)
文摘To determine the dynamic influence range of emergencies under special events, the spacial and temporal characteristics of the traffic flow are studied by simulation based on the cell transmission model （CTM）. Based on the traffic management measures used under special events, a semi-dynamic assignment algorithm is proposed, which is combined with an algorithm for logit multi-path traffic assignment and the CTM. In a simple calculation network, the spacial and temporal characteristics of traffic flows which vary with different traffic management schemes are studied, and a method to obtain the influence range of emergency is proposed by computing the jam time of the intersections. By contrasting the average delay of each vehicle, the dissipation effect is studied under two different traffic management schemes. The example shows that the spatial and temporal variety of the traffic flow can be easily simulated and the influence range of emergency can be confirmed by the method based on the CTM. The proposed method provides a new idea for decision-making on traffic management under emergency under special events.
文摘Hot carrier effects of p MOSFETs with different oxide thicknesses are studied in low gate voltage range.All electrical parameters follow a power law relationship with stress time,but degradation slope is dependent on gate voltage.For the devices with thicker oxides,saturated drain current degradation has a close relationship with the product of gate current and electron fluence.For small dimensional devices,saturated drain current degradation has a close relationship with the electron fluence.This degradation model is valid for p MOSFETs with 0 25μm channel length and different gate oxide thicknesses.
