An IGBT subcircuit model is proposed and optimized,which is fully SPICE compatible.Based on analytical equations describing the semiconductor device physics,the model parameters are extracted accurately from the measu...An IGBT subcircuit model is proposed and optimized,which is fully SPICE compatible.Based on analytical equations describing the semiconductor device physics,the model parameters are extracted accurately from the measured data without device destruction.The IGBT n - layer conductivity modulated resistor is effectively modeled as a voltage controlled resistor.The proposed model can be used to accurately predict the IGBT output I-V characteristics and low current gain etc.The simulation results are verified by the comparison with measurements and found to be in good agreement with them.The error in average is within 8%,which is better than the results of semi-mathematical models reported previously.展开更多
A new method is used to simulate InGaAs/InP composite channel high electron mobility transistors （HEMTs）. By coupling the hydrodynamic model and the density gradient model, the electron density distribution in the c...A new method is used to simulate InGaAs/InP composite channel high electron mobility transistors （HEMTs）. By coupling the hydrodynamic model and the density gradient model, the electron density distribution in the channel in different electric fields is obtained. This method is faster and more robust than traditional meth- ods and should be applicable to other types of HEMTs simulations. A detailed study of the InGaAs/InP composite channel HEMTs is presented with the help of simulations.展开更多
AIGaN/GaN HEMTs are investigated by numerical simulation from the self-consistent solution of Schr6dinger-Poisson-hydrodynamic （HD） systems. The influences of polarization charge and quantum effects are considered i...AIGaN/GaN HEMTs are investigated by numerical simulation from the self-consistent solution of Schr6dinger-Poisson-hydrodynamic （HD） systems. The influences of polarization charge and quantum effects are considered in this model. Then the two-dimensional conduction band and electron distribution, electron temperature characteristics, Id versus Vd and Id versus Vg, transfer characteristics and transconductance curves are obtained. Corresponding analysis and discussion based on the simulation results are subsequently given.展开更多
The structure factors of any crystal structure can be simulated from its atomic coordinates (and temperature factors) in a SHELXL-97 run on a dummy hkl in which only the scale factor is refined. The squares of the str...The structure factors of any crystal structure can be simulated from its atomic coordinates (and temperature factors) in a SHELXL-97 run on a dummy hkl in which only the scale factor is refined. The squares of the structure factors are retrieved from the fcf, and such simulated data are used in the revision of the space groups of several incorrectly-refined crystal structures. Two cases, a P1 to P1 revision and a chemically-incorrect structure that is refined in a correct space group, are discussed.展开更多
A new bipolar junction field-effect transistor (BJFET) was described. The theoretical analysis and computer simulation of BJFET obstructive characteristic are achieved. The gate bias voltage affects the BJFET obstruct...A new bipolar junction field-effect transistor (BJFET) was described. The theoretical analysis and computer simulation of BJFET obstructive characteristic are achieved. The gate bias voltage affects the BJFET obstructive voltage greatly. The BJFET obstructive characteristic is relevant to structure parameters of channel width W and channel length L. The decrease-bias-voltage operation can weaken the device obstructive characteristic. The forward turn in device forward obstructive region can also affect the BJFET obstructive characteristic. BJFET has a good high temperature obstructive characteristic and can be applying to high temperature status as high voltage switch devices.展开更多
Interface is the key issue to understand the performance of composite materials.In this work,we study the interface between octahydro-1,3,5,7-tetranitro-1,3,5,7-tetrazocine(HMX) and graphite,try to find out its contri...Interface is the key issue to understand the performance of composite materials.In this work,we study the interface between octahydro-1,3,5,7-tetranitro-1,3,5,7-tetrazocine(HMX) and graphite,try to find out its contribution to mixture explosives.The work starts from the force-field derivation.We get ab initio based pair potentials across the interface,and then use them to study the interface structural and mechanical properties.A series of large scale molecular dynamics simulations are performed.The structure evolution,energy variation and elastic/plastic transformation of interface and polycrystal systems are calculated.The desensitizing mechanism of graphite to HMX is discussed.展开更多
The effects of a pulsed magnetic field on the solidified microstructure of pure Mg were investigated.The results show that microstructure of pure Mg is considerably refined via columnar-to-equiaxed growth under the pu...The effects of a pulsed magnetic field on the solidified microstructure of pure Mg were investigated.The results show that microstructure of pure Mg is considerably refined via columnar-to-equiaxed growth under the pulsed magnetic field and the average grain size is refined to 260？？ under the optimal processing conditions.A mathematical model was built to describe the interaction of the electromagnetic-flow fields during solidification with ANSYS software.The pulsed electric circuit was first solved and then it is substituted into the magnetic field model.The fluid flow model was solved with the acquired electromagnetic force.The effects of pulse voltage frequency on the current wave and on the distribution of magnetic and flow fields were numerically studied.The pulsed magnetic field increases melt convection,which stirs and fractures the dendritic arms into pieces.These broken pieces are transported into the bulk liquid by the liquid flow and act as nuclei to enhance grain refinement.The Joule heat effect produced by the electric current also participates in the microstructural refinement.展开更多
文摘An IGBT subcircuit model is proposed and optimized,which is fully SPICE compatible.Based on analytical equations describing the semiconductor device physics,the model parameters are extracted accurately from the measured data without device destruction.The IGBT n - layer conductivity modulated resistor is effectively modeled as a voltage controlled resistor.The proposed model can be used to accurately predict the IGBT output I-V characteristics and low current gain etc.The simulation results are verified by the comparison with measurements and found to be in good agreement with them.The error in average is within 8%,which is better than the results of semi-mathematical models reported previously.
文摘A new method is used to simulate InGaAs/InP composite channel high electron mobility transistors （HEMTs）. By coupling the hydrodynamic model and the density gradient model, the electron density distribution in the channel in different electric fields is obtained. This method is faster and more robust than traditional meth- ods and should be applicable to other types of HEMTs simulations. A detailed study of the InGaAs/InP composite channel HEMTs is presented with the help of simulations.
文摘AIGaN/GaN HEMTs are investigated by numerical simulation from the self-consistent solution of Schr6dinger-Poisson-hydrodynamic （HD） systems. The influences of polarization charge and quantum effects are considered in this model. Then the two-dimensional conduction band and electron distribution, electron temperature characteristics, Id versus Vd and Id versus Vg, transfer characteristics and transconductance curves are obtained. Corresponding analysis and discussion based on the simulation results are subsequently given.
文摘The structure factors of any crystal structure can be simulated from its atomic coordinates (and temperature factors) in a SHELXL-97 run on a dummy hkl in which only the scale factor is refined. The squares of the structure factors are retrieved from the fcf, and such simulated data are used in the revision of the space groups of several incorrectly-refined crystal structures. Two cases, a P1 to P1 revision and a chemically-incorrect structure that is refined in a correct space group, are discussed.
文摘A new bipolar junction field-effect transistor (BJFET) was described. The theoretical analysis and computer simulation of BJFET obstructive characteristic are achieved. The gate bias voltage affects the BJFET obstructive voltage greatly. The BJFET obstructive characteristic is relevant to structure parameters of channel width W and channel length L. The decrease-bias-voltage operation can weaken the device obstructive characteristic. The forward turn in device forward obstructive region can also affect the BJFET obstructive characteristic. BJFET has a good high temperature obstructive characteristic and can be applying to high temperature status as high voltage switch devices.
基金Supported by the 973 Project in China under Grant No. 61383National Natural Science Foundation of China under Grant No. 11004011+1 种基金Defence Industrial Technology Development Program under Grant No. B1520110002Open Project of State Key Labo-ratory of Explosion Science and Technology (Beijing Institute of Technology,No. KFJJ11-2M)
文摘Interface is the key issue to understand the performance of composite materials.In this work,we study the interface between octahydro-1,3,5,7-tetranitro-1,3,5,7-tetrazocine(HMX) and graphite,try to find out its contribution to mixture explosives.The work starts from the force-field derivation.We get ab initio based pair potentials across the interface,and then use them to study the interface structural and mechanical properties.A series of large scale molecular dynamics simulations are performed.The structure evolution,energy variation and elastic/plastic transformation of interface and polycrystal systems are calculated.The desensitizing mechanism of graphite to HMX is discussed.
基金Project(50774075)supported by the National Natural Science Foundation of ChinaProject(2006BAE04B01-4)supported by Key Technologies R&D Program,China
文摘The effects of a pulsed magnetic field on the solidified microstructure of pure Mg were investigated.The results show that microstructure of pure Mg is considerably refined via columnar-to-equiaxed growth under the pulsed magnetic field and the average grain size is refined to 260？？ under the optimal processing conditions.A mathematical model was built to describe the interaction of the electromagnetic-flow fields during solidification with ANSYS software.The pulsed electric circuit was first solved and then it is substituted into the magnetic field model.The fluid flow model was solved with the acquired electromagnetic force.The effects of pulse voltage frequency on the current wave and on the distribution of magnetic and flow fields were numerically studied.The pulsed magnetic field increases melt convection,which stirs and fractures the dendritic arms into pieces.These broken pieces are transported into the bulk liquid by the liquid flow and act as nuclei to enhance grain refinement.The Joule heat effect produced by the electric current also participates in the microstructural refinement.
