A high-resolution,200kHz signal bandwidth,third-order single-loop single-bit ε△ modulator used in low-IF GSM receivers is presented. The modulator is implemented with fully differential switched capacitor circuits i...A high-resolution,200kHz signal bandwidth,third-order single-loop single-bit ε△ modulator used in low-IF GSM receivers is presented. The modulator is implemented with fully differential switched capacitor circuits in standard 0. 6μm 2P2M CMOS technology. The modulator uses two balanced reference voltages of ±1V,and is driven by a single 26MHz clock signal. The measurement results show that,with an oversampling ratio of 64, the modulator achieves an 80.6dB dynamic range,a 71.8dB peak SNDR,and a 73.9dB peak SNR in the signal bandwidth of 200kHz. The modulator dissipates 15mW static power from a single 5V supply.展开更多
To satisfy the design requirements of analog-to-digital converter （ADC） of high speed sampling system in an infrared focal plane array tester with 1024 × 1024 pixels, a first inter-stage amplifier of 12-bit 40-...To satisfy the design requirements of analog-to-digital converter （ADC） of high speed sampling system in an infrared focal plane array tester with 1024 × 1024 pixels, a first inter-stage amplifier of 12-bit 40- Msample/s pipelined ADC was designed with 0. 35 μm CMOS technology. On the basis of traditional two-stage amplifier, the cross-coupled class AB output stage and cascode compensation were adopted to improve the output vohage swing and bandwidth. Power dissipation was optimized with math tools. Circuit and layout design were completed. Simulation results show that the designed amplifier has good performance of 95 dB dc gain, ±2 V output voltage swing, 190 MHz bandwidth and 63° phase margin with feedback factor 1/4, 33 mW power dissipation and so on, which can meet the system requirements.展开更多
This paper describes a 3.0V, 10b,40Msample/s analog-to-digital converter （ADC） fabricated in a 0.25μm CMOS technology. Through the sharing an amplifier between two successive pipeline stages, the converter is reali...This paper describes a 3.0V, 10b,40Msample/s analog-to-digital converter （ADC） fabricated in a 0.25μm CMOS technology. Through the sharing an amplifier between two successive pipeline stages, the converter is realized using just four amplifiers with a separate sample-and-hold block. It employs two key techniques： a high bandwidth low-power gain-boosting telescopic amplifiers technique and a low power low offset dynamic comparators technique.The ADC achieves a 8.1 effective number of bits,a maximum differential nonlinearity of a 0.85 least significant bit（LSB）, and maximum integral nonlinearity of 2.2LSB for a 0.5MHz input at full sampling rate. It occupies 1.24mm^2 ,which also includes a bandgap and a voltage reference circuit and dissipates only 59mW.展开更多
A single power supply common-gate （CG） current mode transimpedance preamplifier （TIA） is developed with a 0.5μm GaAs PHEMT process. The amplifier has a measured - 3dB bandwidth of 7. 5GHz and a transimpedance gai...A single power supply common-gate （CG） current mode transimpedance preamplifier （TIA） is developed with a 0.5μm GaAs PHEMT process. The amplifier has a measured - 3dB bandwidth of 7. 5GHz and a transimpedance gain of 45dBΩ. Both the input and output voltage standing wave ratios （VSWR） are less than 2 within the bandwidth. The equivalent input noise current spectral density varies from 14.3 to 22pA/√Hz, with an average value of 17. 2pA/√Hz. Having a timing jitter of 14ps and eye amplitude of about 138mV,the measured output eye diagram for 10Gb/s NRZ pseudorandom binary sequence （PRBS） is clear and satisfactory.展开更多
This paper presents a 10-bit 20 MS/s pipelined Analog-to- Digital Converter（ADC） using op amp sharing approach and removing Sample and Hold Amplifier（SHA） or SHA-less technique to reach the goal of low-power const...This paper presents a 10-bit 20 MS/s pipelined Analog-to- Digital Converter（ADC） using op amp sharing approach and removing Sample and Hold Amplifier（SHA） or SHA-less technique to reach the goal of low-power constanpfion. This design was fabricated in TSMC 0.18 wn 1P6M technology. Measurement results show at supply voltage of 1.8 V, a SFDR of 42.46 dB, a SNDR of 39.45 dB, an ENOB of 6.26, and a THDof41.82 dB are at 1 MHz sinusoidal sig- nal input. In addition, the DNL and INL are 1.4 LSB and 3.23 LSB respectively. The power onstmaption is 28.8 mW. The core area is 0.595 mm2 and the chip area including pads is 1.468 mm2.展开更多
This paper introduces a high-revolution,200kHz signal bandwidth EA modulator for low-IF GSM receivers that adopts a 2-1 cascaded single-bit structure to achieve high linearity and stability. Our design is realized in ...This paper introduces a high-revolution,200kHz signal bandwidth EA modulator for low-IF GSM receivers that adopts a 2-1 cascaded single-bit structure to achieve high linearity and stability. Our design is realized in a standard 0.18μm CMOS process with art active area of 0.5mm× 1.1mm.The EA modulator is driven by a single 19.2MHz clock signal and dissipates 5.88mW from 3V power supply. The experimental results show that,with an oversampling ratio of 48, the modulator achieves a 84.4dB dynamic range,73.8dB peak SNDR, and 80dB peak SNR in the signal bandwidth of 200kHz.展开更多
文摘A high-resolution,200kHz signal bandwidth,third-order single-loop single-bit ε△ modulator used in low-IF GSM receivers is presented. The modulator is implemented with fully differential switched capacitor circuits in standard 0. 6μm 2P2M CMOS technology. The modulator uses two balanced reference voltages of ±1V,and is driven by a single 26MHz clock signal. The measurement results show that,with an oversampling ratio of 64, the modulator achieves an 80.6dB dynamic range,a 71.8dB peak SNDR,and a 73.9dB peak SNR in the signal bandwidth of 200kHz. The modulator dissipates 15mW static power from a single 5V supply.
文摘To satisfy the design requirements of analog-to-digital converter （ADC） of high speed sampling system in an infrared focal plane array tester with 1024 × 1024 pixels, a first inter-stage amplifier of 12-bit 40- Msample/s pipelined ADC was designed with 0. 35 μm CMOS technology. On the basis of traditional two-stage amplifier, the cross-coupled class AB output stage and cascode compensation were adopted to improve the output vohage swing and bandwidth. Power dissipation was optimized with math tools. Circuit and layout design were completed. Simulation results show that the designed amplifier has good performance of 95 dB dc gain, ±2 V output voltage swing, 190 MHz bandwidth and 63° phase margin with feedback factor 1/4, 33 mW power dissipation and so on, which can meet the system requirements.
文摘This paper describes a 3.0V, 10b,40Msample/s analog-to-digital converter （ADC） fabricated in a 0.25μm CMOS technology. Through the sharing an amplifier between two successive pipeline stages, the converter is realized using just four amplifiers with a separate sample-and-hold block. It employs two key techniques： a high bandwidth low-power gain-boosting telescopic amplifiers technique and a low power low offset dynamic comparators technique.The ADC achieves a 8.1 effective number of bits,a maximum differential nonlinearity of a 0.85 least significant bit（LSB）, and maximum integral nonlinearity of 2.2LSB for a 0.5MHz input at full sampling rate. It occupies 1.24mm^2 ,which also includes a bandgap and a voltage reference circuit and dissipates only 59mW.
文摘A single power supply common-gate （CG） current mode transimpedance preamplifier （TIA） is developed with a 0.5μm GaAs PHEMT process. The amplifier has a measured - 3dB bandwidth of 7. 5GHz and a transimpedance gain of 45dBΩ. Both the input and output voltage standing wave ratios （VSWR） are less than 2 within the bandwidth. The equivalent input noise current spectral density varies from 14.3 to 22pA/√Hz, with an average value of 17. 2pA/√Hz. Having a timing jitter of 14ps and eye amplitude of about 138mV,the measured output eye diagram for 10Gb/s NRZ pseudorandom binary sequence （PRBS） is clear and satisfactory.
基金provided by National Chip Implementation Center(CIC)
文摘This paper presents a 10-bit 20 MS/s pipelined Analog-to- Digital Converter（ADC） using op amp sharing approach and removing Sample and Hold Amplifier（SHA） or SHA-less technique to reach the goal of low-power constanpfion. This design was fabricated in TSMC 0.18 wn 1P6M technology. Measurement results show at supply voltage of 1.8 V, a SFDR of 42.46 dB, a SNDR of 39.45 dB, an ENOB of 6.26, and a THDof41.82 dB are at 1 MHz sinusoidal sig- nal input. In addition, the DNL and INL are 1.4 LSB and 3.23 LSB respectively. The power onstmaption is 28.8 mW. The core area is 0.595 mm2 and the chip area including pads is 1.468 mm2.
文摘This paper introduces a high-revolution,200kHz signal bandwidth EA modulator for low-IF GSM receivers that adopts a 2-1 cascaded single-bit structure to achieve high linearity and stability. Our design is realized in a standard 0.18μm CMOS process with art active area of 0.5mm× 1.1mm.The EA modulator is driven by a single 19.2MHz clock signal and dissipates 5.88mW from 3V power supply. The experimental results show that,with an oversampling ratio of 48, the modulator achieves a 84.4dB dynamic range,73.8dB peak SNDR, and 80dB peak SNR in the signal bandwidth of 200kHz.
