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大面积枕型二维位敏探测器的研制 被引量:2
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作者 黄烈云 莫彦祎 向勇军 《半导体光电》 CAS CSCD 北大核心 2014年第2期211-213,共3页
在简要分析二维位敏探测器工作原理的基础上,详细介绍了一种大面积枕型二维位敏探测器的结构设计和制作工艺。对器件响应度、暗电流、位置分辨率,以及位置线性度等性能参数进行了分析。测试结果显示,器件在峰值波长λp=930nm处的响应度... 在简要分析二维位敏探测器工作原理的基础上,详细介绍了一种大面积枕型二维位敏探测器的结构设计和制作工艺。对器件响应度、暗电流、位置分辨率,以及位置线性度等性能参数进行了分析。测试结果显示,器件在峰值波长λp=930nm处的响应度达0.63A/W,暗电流小于300nA(VR=10V),位置分辨率小于10μm,位置非线性度小于5%。 展开更多
关键词 二维位敏探测器 大面积 枕型 横向光电响应 Gear定理
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Ultrathin 2D ternary Bi_(2)Te_(2)Se flakes for fast-response photodetectors with gate-tunable responsivity 被引量:1
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作者 Peng Luo Ke Pei +5 位作者 Fakun Wang Xin Feng Huiqiao Li Xitao Liu Junhua Luo Tianyou Zhai 《Science China Materials》 SCIE EI CAS CSCD 2021年第12期3017-3026,共10页
Two-dimensional(2D) ternary materials have sprung up in a broad variety of optoelectronic applications due to their robust degree of freedom to design the physical properties of the materials through adjusting the sto... Two-dimensional(2D) ternary materials have sprung up in a broad variety of optoelectronic applications due to their robust degree of freedom to design the physical properties of the materials through adjusting the stoichiometric ratio. However, the controlled growth of high-quality 2D ternary materials with good chemical stoichiometry remains challenging, which severely impedes their further development and future device applications. Herein, we synthesize ternary Bi_(2)Te_(2)Se(BTS) flakes with a thickness down to 4 nm and a lateral dimension about 60 μm by an atmospheric-pressure solid source thermal evaporation method on a mica substrate. The phonon vibration and electrical transportation of 2D BTS are respectively investigated by temperature-dependent Raman spectrum and conductivity measurements. Furthermore, the photodetector based on 2D BTS exhibits excellent performance with a high light on/off ratio of 1300(365 nm), a wide spectral response range from 365 to 980 nm, and an ultra-fast response speed up to 2 μs. In addition, its electrical and photoelectric properties can be modulated by the gate voltage, offering an improved infrared responsivity to 2.74 A W^(-1) and an on/off ratio of 2266 under 980 nm. This work introduces an effective approach to obtain 2D BTS flakes and demonstrates their excellent prospects in optoelectronics. 展开更多
关键词 2D materials ternary materials Bi_(2)Te_(2)Se PHOTODETECTORS field-effect transistors
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