Well known for their good performance,thin film transistors (TFTs) with active layers which were nickel induced laterally crystallized,are fabricated by conventional process of dual gate CMOS.The influence of pre h...Well known for their good performance,thin film transistors (TFTs) with active layers which were nickel induced laterally crystallized,are fabricated by conventional process of dual gate CMOS.The influence of pre high temperature treatment of device fabrication on the performance of TFTs is also investigated.The experiment shows that the high temperature treatment affects the performance of the devices strongly.The best performance is obtained by adopting pre treatment of 1000℃.The mobility of 314cm 2/(V·s) is obtained at NMOS TFTs with pre treatment of 1000℃,which is 10% and 22% higher than that treated at 1100℃ and without pre high temperature treatment,respectively.A maximum on/off current ratio of 3×10 8 is also obtained at 1000℃.Further investigation of uniformity verifies that the result is reliable.展开更多
The partial derivative equations of Zoeppritz equations are established and the derivatives of each matrix entry with respect to wave vectors are derived in this paper.By solving the partial derivative equations we ob...The partial derivative equations of Zoeppritz equations are established and the derivatives of each matrix entry with respect to wave vectors are derived in this paper.By solving the partial derivative equations we obtained the partial derivatives of seismic wave reflection coefficients with respect to wave vectors,and computed the Goos-Hnchen shift for reflected P-and VS-waves.By plotting the curves of Goos-Hnchen shift,we gained some new insight into the lateral shift of seismic reflection wave.The lateral shifts are very large for glancing wave or the wave of the incidence angle near the critical angle,meaning that the seismic wave propagates a long distance along the reflection interface before returning to the first medium.For the reflection waves of incidence angles away from the critical angle,the lateral shift is in the same order of magnitude as the wavelength.The lateral shift varies significantly with different reflection interfaces.For example,the reflected P-wave has a negative shift at the reflection interface between mudstone and sandstone.The reflected VS-wave has a large lateral shift at or near the critical angle.The lateral shift of the reflected VS-wave tends to be zero when the incidence angle approaches 90°.These observations suggest that Goos-Hnchen effect has a great influence on the reflection wave of wide-angles.The correction for the error caused by Goos-Hnchen effect,therefore,should be made before seismic data processing,such as the depth migration and the normal-moveout correction.With the theoretical foundation established in this paper,we can further study the correction of Goos-Hnchen effect for the reflection wave of large incidence angle.展开更多
基金Xinjiang Laboratory of Multi-Lingual Information Technology Open Projects Funded(XJDX0905-2013-3)Xinjiang Medical University Education Reform Support Project(YG201301515)
文摘Well known for their good performance,thin film transistors (TFTs) with active layers which were nickel induced laterally crystallized,are fabricated by conventional process of dual gate CMOS.The influence of pre high temperature treatment of device fabrication on the performance of TFTs is also investigated.The experiment shows that the high temperature treatment affects the performance of the devices strongly.The best performance is obtained by adopting pre treatment of 1000℃.The mobility of 314cm 2/(V·s) is obtained at NMOS TFTs with pre treatment of 1000℃,which is 10% and 22% higher than that treated at 1100℃ and without pre high temperature treatment,respectively.A maximum on/off current ratio of 3×10 8 is also obtained at 1000℃.Further investigation of uniformity verifies that the result is reliable.
基金supported by Funding Project for Academic Human Resources Development in Institutions of Higher Learning (Grant No. PHR201107145)
文摘The partial derivative equations of Zoeppritz equations are established and the derivatives of each matrix entry with respect to wave vectors are derived in this paper.By solving the partial derivative equations we obtained the partial derivatives of seismic wave reflection coefficients with respect to wave vectors,and computed the Goos-Hnchen shift for reflected P-and VS-waves.By plotting the curves of Goos-Hnchen shift,we gained some new insight into the lateral shift of seismic reflection wave.The lateral shifts are very large for glancing wave or the wave of the incidence angle near the critical angle,meaning that the seismic wave propagates a long distance along the reflection interface before returning to the first medium.For the reflection waves of incidence angles away from the critical angle,the lateral shift is in the same order of magnitude as the wavelength.The lateral shift varies significantly with different reflection interfaces.For example,the reflected P-wave has a negative shift at the reflection interface between mudstone and sandstone.The reflected VS-wave has a large lateral shift at or near the critical angle.The lateral shift of the reflected VS-wave tends to be zero when the incidence angle approaches 90°.These observations suggest that Goos-Hnchen effect has a great influence on the reflection wave of wide-angles.The correction for the error caused by Goos-Hnchen effect,therefore,should be made before seismic data processing,such as the depth migration and the normal-moveout correction.With the theoretical foundation established in this paper,we can further study the correction of Goos-Hnchen effect for the reflection wave of large incidence angle.
