6000伏晶闸管正向压降的计算机模拟

介绍用数值分析方法对6000V特大功率晶闸管的正向压降进行计算机模拟,对降低正向压降的途径进行计算机辅助分析的一些基本考虑和主要结果。在强调重掺杂与大注入效应的时候,提出了一种修正的少数载流子寿命模型。根据模拟结果对决定正向压降的物理因素和工艺因素进行了讨论。

Improvement of Electrical Performance of SOI-LIGBT by Resistive Field Plate

The electrical performance including breakdown voltage and turn-off speed of SOI-LIGBT is improved by incorporating a resistive field plate (RFP) and a p-MOSFET.The p-MOSFET is controlled by a signal detected from a point of the RFP.During the turning-off of the IGBT,the p-MOSFET is turned on,which provides a channel for the excessive carriers to flow out of the drift region and prevents the carriers from being injected into the drift region.At the same time,the electric field affected by the RFP makes the excessive carriers flow through a wider region,which almost eliminates the second phase of the turning-off of the SOI-LIGBT caused by the substrate bias.Faster turn-off speed is achieved by above two factors.During the on state of the IGBT,the p-MOSFET is off,which leads to an on-state performance like normal one.At least,the increase of the breakdown voltage for 25% and the decrease of the turn-off time for 65% can be achieved by this structure as can be verified by the numerical simulation results.

驱动大功率LED之道

本文将讨论对驱动新型LED的恒定电流源(而不是电压源)的要求,并介绍驱动高亮度LED的各种方法。本文将介绍LED可采用的不同拓扑和配置,以及用开关稳压器和控制器驱动LED的方法,并讨论降压和升压拓扑以及这两种设计之间的折衷策略,同时还会介绍参考设计以及驱动这些大功率LED的几种解决方案。

驱动大功率LED之道

本文将讨论对驱动新型LFD的恒定电流源（而不是电压源）的要求，并介绍驱动高亮度LED的各种方法本文将介绍LED可采用的不同拓扑和配置，以及用开关稳压器和控制器驱动LED的方法，并讨论降压和升压拓扑以及这两种设计之间的折衷策略。