The photoluminescence (PL) of the compound films made by implanting nbutylamine/ Rhodamine into the porous silicon films was studied. Comparison and discussion of the difference of PL of the compound films and the dye...The photoluminescence (PL) of the compound films made by implanting nbutylamine/ Rhodamine into the porous silicon films was studied. Comparison and discussion of the difference of PL of the compound films and the dyes were carried out.The PL of the compound films with different substrates was measured.展开更多
The channel lateral pocket or halo region of NMOSFET characterized by interface state R G current of a forward gated diode has been investigated numerically for the first time.The result of numerical analysis demons...The channel lateral pocket or halo region of NMOSFET characterized by interface state R G current of a forward gated diode has been investigated numerically for the first time.The result of numerical analysis demonstrates that the effective surface doping concentration and the interface state density of the pocket or halo region are interface states R G current peak position dependent and amplitude dependent,respectively.It can be expressed quantitatively according to the device physics knowledge,thus,the direct characterization of the interface state density and the effective surface doping concentration of the pocket or halo becomes very easy.展开更多
文摘The photoluminescence (PL) of the compound films made by implanting nbutylamine/ Rhodamine into the porous silicon films was studied. Comparison and discussion of the difference of PL of the compound films and the dyes were carried out.The PL of the compound films with different substrates was measured.
文摘The channel lateral pocket or halo region of NMOSFET characterized by interface state R G current of a forward gated diode has been investigated numerically for the first time.The result of numerical analysis demonstrates that the effective surface doping concentration and the interface state density of the pocket or halo region are interface states R G current peak position dependent and amplitude dependent,respectively.It can be expressed quantitatively according to the device physics knowledge,thus,the direct characterization of the interface state density and the effective surface doping concentration of the pocket or halo becomes very easy.