The transient behavior of a semiconductor device is described by a system of three quasilinear partial differential equations: one elliptic in form for the electric potential and two parabolic in form for the conserva...The transient behavior of a semiconductor device is described by a system of three quasilinear partial differential equations: one elliptic in form for the electric potential and two parabolic in form for the conservation of electron and hole concentrations,展开更多
基金Project supported by the National Natural Science Foundation of China
文摘The transient behavior of a semiconductor device is described by a system of three quasilinear partial differential equations: one elliptic in form for the electric potential and two parabolic in form for the conservation of electron and hole concentrations,