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High Temperature Corrosion of Water Wall Materials T23 and T24 in Simulated Furnace Atmospheres 被引量:8
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作者 赵钦新 张知翔 +2 位作者 成丁南 王云刚 邓翔 《Chinese Journal of Chemical Engineering》 SCIE EI CAS CSCD 2012年第4期814-822,共9页
Candidate materials for water wall of supercritical and ultra-supercritical utility boilers,T23 and T24,were chosen as the experimental samples and exposed to oxidizing atmosphere,reducing atmosphere and oxidizing/red... Candidate materials for water wall of supercritical and ultra-supercritical utility boilers,T23 and T24,were chosen as the experimental samples and exposed to oxidizing atmosphere,reducing atmosphere and oxidizing/reducing alternating atmosphere separately.The corrosion temperature was 450-550?C.The effects of oxygen con-tent and temperature on the corrosion in reducing atmosphere and alternating atmosphere were investigated.The scanning electron microscope(SEM) and energy dispersive spectrometer(EDS) were used to examine the corroded samples.The results show that the corrosion kinetics of T23 and T24 can be described by the double logarithmic equation and parabolic equation respectively.To describe the corrosion of materials accurately it is not sufficient to analyze the macro-mass gain and the macro-thickness of the corroded layer only,but the EDS should be applied to examine the migration depth of corrosive elements O and S.It is revealed that the corrosion becomes more severe when H2S is present in the corrosive gas.S is more active than O,and Cr can reduce the migration of oxygen but not S.The combination corrosion of S and O and pure [S] has a stronger corrodibility than pure H2S.T24 suffers the most severe corrosion at oxygen content of 0.8%.Corrosion is aggravated when the corrosion temperature is above 450 ℃ in the alternating atmosphere.T23 has better corrosion resistance than T24 and W contributes a lot to the corrosion resistance of T23. 展开更多
关键词 stainless steel mass gain element migration high temperature corrosion
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Growth of Nano Crystalline Diamond on Silicon Substrate Using Different Etching Gases by HFCVD
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作者 Z.Khalaj M.Ghoranneviss +2 位作者 S.Nasirilaheghi Z.Ghorannevisb R.Hatakeyama 《Chinese Journal of Chemical Physics》 SCIE CAS CSCD 2010年第6期689-692,746,共5页
We investigate the effects of etching gases on the synthesis of nano crystalline diamonds grown on silicon substrate at the substrate temperature of 550℃ and the reaction pressure of 4 kPa by hot filament chemical va... We investigate the effects of etching gases on the synthesis of nano crystalline diamonds grown on silicon substrate at the substrate temperature of 550℃ and the reaction pressure of 4 kPa by hot filament chemical vapor deposition method, in which CH4 and H2 act as a source and diluting gases, respectively. N2, H2, and NH3 were used as the etching gases, respectively. Results show that the optimum conditions can be obtained only for the case of H2 gas. The crystal morphology and crystallinity of the samples have been examined by scanning electron microscopy and X-ray diffraction, respectively. 展开更多
关键词 Nano crystalline diamond Etching gas Hot filament chemical vapor deposition
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防止渣浆泵过流件损坏的措施
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作者 吴海亭 《华东电力》 北大核心 2002年第4期64-65,共2页
叙述了在电厂排灰系统广泛应用的渣浆泵过流件的损坏原因 ,提出了避免汽蚀的技术措施 ,对正确。
关键词 渣浆泵 过流件 损坏 热电厂 排灰系统 破坏机理 气体气蚀
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