一维纳米结构氧化锌材料的气相沉积制备及生长特性研究

ZnO是一种可用于室温或更高温度下的紫外发光材料,纳米结构的ZnO(如单晶薄膜、纳米粒子膜、纳米线和纳米带等)则更是在紫外激光发射领域显示了独到的优势,被认为是有望构造短波长半导体激光器的理想材料.本文对一维ZnO纳米结构(纳米线、纳米管和纳米带)的真空物理气相沉积制备技术及生长机理进行了初步探讨.

丛粒藻烷类非烃化合物的分离、富集与气相色谱纯化、制备

气相制备色谱(pGC)作为分离、纯化高纯度单体化合物的有效手段,被广泛应用于许多领域。国外地球化学方面已有众多关于化石燃料生物标志物的应用实例,而国内这方面的应用相对较少。本文选取富含丛粒藻烷类生物标志物的茂名油页岩特殊样品,尝试对非烃馏分中的目标化合物开展分离、富集和纯化、制备。在经过硅胶/氧化铝柱色谱初次分离后,取非烃组分进行纯硅胶柱色谱二次分离,之后再采用气相制备色谱开展精细分离和纯化,成功制备出非烃组分中3个与丛粒藻烷相关联的目标化合物,纯度高达95%以上。以此为例,介绍了气相制备色谱的使用原理和目标化合物分离、富集、纯化的经验。

碳化硅纤维制备技术研究进展

综述了工业化制备碳化硅 (Si C)纤维技术的研究进展 ,并对化学气相沉积 (CV D)法、先驱体转化法和活性炭纤维 (A CF )转化法这三种碳化硅纤维制备方法的原理、生产工艺路线和各自的优缺点作了系统的评述。认为 CV D法已被淘汰 ,先驱体转化法是目前 Si C纤维制备研究的方向 ,A CF法是实现Si

晶须的制备

本文叙述了晶须材料的各种制备方法,包括从气相、水溶液及熔体中生长晶须的多种方法,以及这些方法应用于金属、无机化合物、有机及聚合物晶须的制备,其中特别详细地讨论了气相沉积、VLS机理制备晶须的原理和方法.

衬底位置对制备二维的MoS2的影响

新型的二维层状材料凭借着其优异的机械、光学、电学等独特性能受到研究者广泛关注,二维层状材料如石墨烯、过渡金属硫族化合物等在柔性器件等领域具有潜在的应用前景,成为了现阶段研究热点之一;然而,应用的前提是高质量的二维材料大面积可控制备。利用化学气相沉积方法制备了二维的MoS_2,探讨了放置衬底的差异对合成二维的MoS_2的影响。结果表明,在其它相同的实验条件下,face-up和face-down的放置位置制备的MoS_2具有不同的形状、在衬底上的覆盖率不同;尽管如此,两种放置情况下,获得的单层的MoS_2具有类似的结构和荧光特性。研究结果对可控合成二维的MoS_2以及其它的TMDs均具有指导意义和参考价值。

上海制备成功纳米二氧化硅

由上海氯碱化工有限公司与华东理工大学等共同承担的产学研项目取得重大突破，它们承担的上海市纳米科技专项“纳米二氧化硅气相燃烧制备技术及设备研制”项目通过鉴定。

耐腐蚀高精度光电透射式液位测量仪设计

为解决气相沉积法制备材料过程中腐蚀性液体液位测量问题,基于液柱透镜成像原理,设计了高精度耐腐蚀的光电透射式液位测量仪。论文给出了液位测量仪的基本工作原理及结构设计、重点分析了液位特征提取算法的设计和实现过程。设计的液位测量仪能够满足透明、半透明、不透明液体的液位测量。实验结果表明,液位特征提取算法能准确识别液滴、液滴串、气泡段等异常影响。液位测量仪能在溶液结晶等较复杂工况下正常工作,并且其测量分辨率达 3.5 μm,静态测量误差小于0.02 mm,单个测量头量程为 52.5 mm,有较好稳定性,非接触式测量,耐腐蚀,可小型化,能够满足较高精度液位测量需求。

Wet friction performance of C/C-SiC composites prepared by new processing route

C/C-SiC composites with SiC island distribution Were prepared via a new processing route. The fabrication process mainly included silicon infiltration by ultrasonic vibration, chemical vapor deposition （CVD）, siliconizing, liquid phase impregnation and carbonization. The wear and friction properties were tested by an MM-1000 wet friction machine. The results show that SiC phases are mainly distributed between carbon fibers and pyrocarbons as well as among the pryoearbons. The dynamic friction coefficient of the composites decreases gradually from 0.126 to 0.088 with the increase of the surface pressure from 0.5 to 2.5 MPa at the same rotary speed. Furthermore, under the constant surface pressure, the dynamic friction coefficient increases from 0.114 to 0.126 with the increase of the rotary speed from 1 500 to 2 500 r/min. However, the coefficient decreases to 0.104 when the rotary speed exceeds 4 500 r/min. During the friction process, the friction coefficient of C/C-SiC composite is between 0.088 and 0.126, and the wear value is zero after 300 times brake testing.

Preparation of N-Doped TiO_2-Loaded Halloysite Nanotubes and Its Photocatalytic Activity under Solar-Light Irradiation

The N-doped TiO2-loaded halloysite nanotubes(N-Ti O2/HNTs) nanocomposites were prepared by using chemical vapor deposition method which was realized in autoclave. The photocatalytic activity of nanocomposites was evaluated by virtue of the decomposition of formaldehyde gas under solar-light irradiation. The XRD patterns verified that the anatase structured TiO2 was deposited on HNTs. The TEM images showed that the surface of HNTs was covered with nanosized TiO2 with a particle size of ca. 20 nm. The UV-vis spectra indicated that the N-Ti O2/HNTs presented a significant absorption band in the visible region between 400 nm and 600 nm. Under solar-light irradiation, the highest degradation rate of formaldehyde gas attained 90% after 100 min of solar-light irradiation. The combination of the photocatalytic property of TiO2 and the unique structure of halloysite would assert a promising perspective in degradation of organic pollutants.

Preparation and Characterization of Nanosized Al-MCM-41 Using Different Silica Sources

Silica sources influence different aspects of Al-MCM-41 product. The crystallinity of nanosized Al-MCM-41 zeolites prepared crystallization and lead to change in the properties of the final from precursors mixtures containing different silica sources, e.g. tetraethylorthosilicate （TEOS）, colloidal silica （CS）, silicic acid （SA） and fumed silica （FS） have been studied. The produced samples are investigated using XRD, SEM, FT-IR, pyridine adsorption and N2 physisorption. XRD results show that the products obtained from different silica sources are in Al-MCM-41 phase. SEM results show that silica sources influence the produced Al-MCM-41 shape. Using silicic acid leads to formation of spherical crystals, TEOS gives cubical crystals, colloidal silica forms spherical crystals with smaller aggregated, and fumed silica gives rounded crystals. N2 physisorption results show that silica sources influence pore-diameter and pore-volume of the produced Al-MCM-41 ; the pore diameter of the produced Al-MCM-41 in case of colloidal silica, TEOS, fumed silica, and silicic acid are 12, 20, 15, and 17A respectively. Also, the pore volume of the produced AI-MCM-41 in case of colloidal silica, TEOS, fumed silica and silicic acid are 0.78, 0.71, 0.76, and 0.8 cm^3/gm, respectively.

Simulation of gas phase reactions for microcrystalline silicon films fabricated by PECVD

We present a numerical gas phase reaction model for hydrogenated microcrystalline silicon(μc-Si:H) films from SiH4 and H2 gas mixtures with plasma enhanced chemical vapor deposition(PECVD).Under the typical μc-Si:H deposition conditions,the concentrations of the species in the plasma are calculated and the effects of silane fraction(SF=[SiH4]/[H2+SiH4]) are investigated.The results show that SiH3 is the key precursor for μc-Si:H films growth,and other neutral radicals,such as Si2H5,Si2H4 and SiH2,may play some roles in the film deposition.With the silane fraction increasing,the precursor concentration increases,but H atom concentration decreases rapidly,which results in the lower H/SiH3 ratio.

Preparation and characterization of In_(0.82)Ga_(0.18)As PIN photodetectors

Using two-step growth method and buffer layer annealing treatment,the double heterojunction structures of In_(0.82)Ga_(0.18) As epilayer capped with In As_(0.6)P0.4 layer were prepared on In P substrate by low pressure metal organic chemical vapor deposition(LP-MOCVD).Based on the high quality In_(0.82)Ga_(0.18) As structures,the In_(0.82)Ga_(0.18) As PIN photodetector with cut-off wavelength of 2.56 μm at room temperature was fabricated by planar semiconductor technology,and the device performance was investigated in detail.The typical dark current at the reverse bias VR=10 m V and the resistance area product R0 A are 5.02 μA and 0.29 ?·cm2 at 296 K and 5.98 n A and 405.2 ?·cm2 at 116 K,respectively.The calculated peak detectivities of the In_(0.82)Ga_(0.18) As photodetector are 1.21×1010 cm·Hz1/2/W at 296 K and 4.39×1011 cm·Hz1/2/W at 116 K respectively,where the quantum efficiency η=0.7 at peak wavelength is supposed.The results show that the detection performance of In_(0.82)Ga_(0.18) As prepared by two-step growth method can be improved greatly.