This paper describes the fabrication of a waveguide and the analysis of its polarization characteristics by applying light-emitting diode(LED) pumping lights to its surface.By using double tubed coaxial line(DTCL) mic...This paper describes the fabrication of a waveguide and the analysis of its polarization characteristics by applying light-emitting diode(LED) pumping lights to its surface.By using double tubed coaxial line(DTCL) microwave plasma chemical vapor deposition(MPCVD) equipment,an a-Si:H/SiN multilayer waveguide was fabricated whose thickness could be controlled at nanometer order.The main structural material of the waveguide sample consisted of a combination of layers of amorphous silicon hydrogen and silicon nitrate.Once the sample was ready,another major objective of the experiment was to analyze the polarization characteristics of the fabricated waveguide.The idea of the experiment was to analyze how the waveguide reacts when three types of LED(blue,yellow,and red) are radiated onto its surface.The results showed that the fabrication of the a-Si:H/SiN sample is successful.Most effective transmission results,which accord with the polarization characteristics analysis,were obtained.展开更多
Stress controllable silicon nitride(Si Nx) films deposited by plasma enhanced chemical vapor deposition(PECVD) are reported. Low stress Si Nx films were deposited in both high frequency(HF) mode and dual frequency(HF/...Stress controllable silicon nitride(Si Nx) films deposited by plasma enhanced chemical vapor deposition(PECVD) are reported. Low stress Si Nx films were deposited in both high frequency(HF) mode and dual frequency(HF/LF) mode. By optimizing process parameters, stress free(-0.27 MPa) Si Nx films were obtained with the deposition rate of 45.5 nm/min and the refractive index of 2.06. Furthermore, at HF/LF mode, the stress is significantly influenced by LF ratio and LF power, and can be controlled to be 10 MPa with the LF ratio of 17% and LF power of 150 W. However, LF power has a little effect on the deposition rate due to the interaction between HF power and LF power. The deposited Si Nx films have good mechanical and optical properties, low deposition temperature and controllable stress, and can be widely used in integrated circuit(IC), micro-electro-mechanical systems(MEMS) and bio-MEMS.展开更多
基金supported by the Waseda University Undergraduate Fund,Japan, and Malaysia Majlis Amanah Rakyat (MARA) through the MARA Scholarship Foundation
文摘This paper describes the fabrication of a waveguide and the analysis of its polarization characteristics by applying light-emitting diode(LED) pumping lights to its surface.By using double tubed coaxial line(DTCL) microwave plasma chemical vapor deposition(MPCVD) equipment,an a-Si:H/SiN multilayer waveguide was fabricated whose thickness could be controlled at nanometer order.The main structural material of the waveguide sample consisted of a combination of layers of amorphous silicon hydrogen and silicon nitrate.Once the sample was ready,another major objective of the experiment was to analyze the polarization characteristics of the fabricated waveguide.The idea of the experiment was to analyze how the waveguide reacts when three types of LED(blue,yellow,and red) are radiated onto its surface.The results showed that the fabrication of the a-Si:H/SiN sample is successful.Most effective transmission results,which accord with the polarization characteristics analysis,were obtained.
基金supported by the National High Technology Research and Development Program of China(No.2015AA042603)the Fundamental Research Funds for the Central Universities of China(No.106112014CDJZR160001)
文摘Stress controllable silicon nitride(Si Nx) films deposited by plasma enhanced chemical vapor deposition(PECVD) are reported. Low stress Si Nx films were deposited in both high frequency(HF) mode and dual frequency(HF/LF) mode. By optimizing process parameters, stress free(-0.27 MPa) Si Nx films were obtained with the deposition rate of 45.5 nm/min and the refractive index of 2.06. Furthermore, at HF/LF mode, the stress is significantly influenced by LF ratio and LF power, and can be controlled to be 10 MPa with the LF ratio of 17% and LF power of 150 W. However, LF power has a little effect on the deposition rate due to the interaction between HF power and LF power. The deposited Si Nx films have good mechanical and optical properties, low deposition temperature and controllable stress, and can be widely used in integrated circuit(IC), micro-electro-mechanical systems(MEMS) and bio-MEMS.
