化学气相沉积层的技术和应用

介绍了国内外化学气相沉积技术的研究进展，对化学气相沉积层的类型、性能和应用进行了详细的介绍，并展望了化学气相沉积法的发展趋势。

Enhancement of nucleation of diamond films deposited on copper substrate by nickel modification layer

A Ni layer with a thickness of about 100 nm was sputtered on Cu substrates,followed by an ultrasonic seeding with nanodiamond suspension.High-quality diamond film with its crystalline grains close to thermal equilibrium shape was deposited on Cu substrates by hot-filament chemical vapor deposition（HF-CVD）,and the sp2 carbon content was less than 5.56%.The nucleation and growth of diamond film were investigated by micro-Raman spectroscopy,scanning electron microscopy,and X-ray diffraction.The results show that the nucleation density of diamond on the Ni-modified Cu substrates is 10 times higher than that on blank Cu substrates.The enhancement mechanism of the nucleation kinetics by Ni modification layer results from two effects：namely,the nanometer rough Ni-modified surface shows an improved absorption of nanodiamond particles that act as starting points for the diamond nucleation during HF-CVD process;the strong catalytic effect of the Ni-modified surface causes the formation of graphite layer that acts as an intermediate to facilitate diamond nucleation quickly.

Electrochemical evaluation of zinc and magnesium alloy coatings deposited on electrogalvanized steel by PVD

Zinc alloy coating attracted much attention due to its high anti-corrosive properties.Particularly,zinc alloy coatings containing magnesium was considered a promising metallic alloy due to a remarkable improvement of corrosion resistance.The proper magnesium content for Zn-Mg alloy coatings was studied.The samples were prepared using thermal evaporation method.The influence of Zn-Mg alloy coating on corrosion resistance was evaluated using immersion test,potentiodynamic test,and galvanic test in 3% NaCl solution at room temperature.The results show that the corrosion resistance of Zn-Mg alloy coatings is strongly dependent on magnesium content.Corrosion potential decreases with increasing magnesium content,whereas current density increases up to 15% magnesium content,and passivity region was found only in Zn-Mg coatings.

Effect of Boundary Layers on Polycrystalline Silicon Chemical Vapor Deposition in a Trichlorosilane and Hydrogen System

This paper presents the numerical investigation of the effects of momentum, thermal and species boundary layers on the characteristics of polycrystalline silicon deposition by comparing the deposition rates in three chemical vapor deposition （CVD） reactors. A two-dimensional model for the gas flow, heat transfer, and mass transfer was coupled to the gas-phase reaction and surface reaction mechanism for the deposition of polycrystalline silicon from trichlorosilane （TCS）-hydrogen system. The model was verified by comparing the simulated growth rate with the experimental and numerical data in the open literature. Computed results in the reactors indicate that the deposition characteristics are closely related to the momentum, thermal and mass boundary layer thickness. To yield higher deposition rate, there should be higher concentration of TCS gas on the substrate, and there should also be thinner boundary layer of HCl gas so that HCl gas could be pushed away from the surface of the substrate immediately.

In-situ preparation of TiO_(2)/N-doped graphene hollow sphere photocatalyst with enhanced photocatalytic CO_(2) reduction performance

Photocatalytic CO_(2)conversion efficiency is hampered by the rapid recombination of photogenerated charge carriers.It is effective to suppress the recombination by constructing cocatalysts on photocatalysts with high-quality interfacial contact.Herein,we develop a novel strategy to in-situ grow ultrathin/V-doped graphene(NG)layer on TiO_(2) hollow spheres(HS) with large area and intimate interfacial contact via a chemical vapor deposition(CVD).The optimized TiO^(2)/NG HS nanocomposite achieves total CO_(2)conversion rates(the sum yield of CO,CH_(3)OH and CH_(4))of 18.11μmol·g^(-1)h^(-1),which is about 4.6 times higher than blank T1O_(2)HS.Experimental results demonstrate that intimate interfacial contact and abundant pyridinic N sites can effectively facilitate photogenerated charge carrier separation and transport,realizing enhanced photocatalytic CO_(2)reduction performance.In addition,this work provides an effective strategy for in-situ construction of graphene-based photocatalysts for highly efficient photocatalytic CO_(2)conversion.

Detailed sedimentary facies of a sandstone reservoir in the eastern zone of the Sulige gas field, Ordos Basin

Given sustaining exploration, the eastern zone of the Sulige gas field may soon become a key area of exploitation. In order to explore its genesis, types and distribution of the reservoir sandstones in the eastern zone of this gas field, we focused in our study on the provenance and detailed sedimentary facies of sandstone of the He8 （the eighth part of the Shihezi formation, Permian system） and Shanxil （the first part of the Shanxi formation, Permian system） members, based on core observations, analyses in petrography, granularity and logging. The results show that： 1） the sandstone provenance of Shanxil and He8 in the eastern zone of the Sulige gas field is from the north of the Ordos Basin, characterized by dual directions from the north and northeast. 2） The He8 and Shanxil members were deposited in a fluvial-delta sedimentary system. The He8 was mainly deposited in braided rivers, in- cluding braided channels, channel bars, levee and floodplain sub-environments, whereas the Shanxil Member was deposited in braided rivers and deltas, including braided channels, channel bars, floodplains, tributaries and inter-tributary sub-environments. 3） Sedimentary facies bands migrated in drastic fashion towards the basin from the Shanxil to the He8 Member. Base levels of sedi- mentation generally present a trend of small increases in-amplitude, large decreasing amplitudes and slow and gradual Increases. 4） The continuity of the reservoir sandbodies along the source direction is better than that perpendicular to the direction. Compared with Shanxil, both dimensions and continuity of the sandbodies in He8 are better from which we conclude that it is the most fa- vorable part of the reservoir.

管约束WC粉末电爆喷涂涂层的形成

采用压敏胶载送粉末连续电爆喷涂方法，进行WC粉末电爆喷涂，分析初始电压与喷射腔横截面积对涂层形成的影响。结果表明：在3～7mm喷涂范围内，可形成表层为液相喷涂层和底层为气相沉积层的复合涂层。在较小的喷射腔横截面积下升高初始电压，能提高爆炸的区域温度和产物速度，增加气相份额。分析认为：气相优先形成气相沉积层，且气相沉积层与基体结合致密；残留的液相滞后喷射，并覆盖在气相沉积层上形成液相喷涂层。

Chemical vapor deposition growth of monolayer MoSe2 nanosheets

The synthesis of two-dimensional （2D） layered materials with controllable thickness is of considerable interest for diverse applications. Here we report the first chemical vapor deposition growth of single- and few-layer MoSe2 nanosheets. By using Se and MoO3 as the chemical vapor supply, we demonstrate that highly crystalline MoSe2 can be directly grown on the 300 nm SiO2/Si substrates to form optically distinguishable single- and multi-layer nanosheets, typically in triangular shaped domains with edge lengths around 30 btm, which can merge into continuous thin films upon further growth. Micro-Raman spectroscopy and imaging was used to probe the thickness-dependent vibrational properties. Photoluminescence spectroscopy demonstrates that MoSe2 monolayers exhibit strong near band edge emission at 1.55 eV, while bilayers or multi-layers exhibit much weaker emission, indicating of the transition to a direct band gap semiconductor as the thickness is reduced to a monolayer.

4H-SiC trench gate MOSFETs with field plate termination

Field plate(FP)-terminated 4H-SiC trench gate MOSFETs are demonstrated in this work.N+/P?/N?/N+multiple epitaxial layers were grown on 3-inch N+type 4H-SiC substrate by chemical vapor deposition(CVD),and then the 4H-SiC trench gate MOSFETs were fabricated based on the standard trench transistor fabrication.Current-voltage measurements in forward and reverse bias have been performed on different devices with and without FP protections.It is found that more than 60%of the devices protected with FP termination are able to block 850 V.The measurements also show that the devices have the small leakage currents 0.15 nA at 600 V and 2.5 nA at 800 V,respectively.The experimental results also were compared with the simulated results,which show good agreement with each other in the trend.The limited performance of the devices is mainly because of the damage induced on the trench sidewalls from the etching process and the quality of the SiO2 films.Therefore,the 4H-SiC trench gate MOSFETs are expected to be optimized by reducing the etching damage and growing high-quality SiO2 dielectric films.

Residual stress of physical vapor-deposited polycrystalline multilayers

An extended one-dimensional stress model for the deposition of multilayer films is built based on the existing stress model by considering the influence of deposition conditions. Both thermal stress and intrinsic stress are considered to constitute the final residual stress in the model. The deposition process conditions such as deposition temperature, oxygen pressure, and film growth rate are correlated to the full stress model to analyze the final residual stress distribution, and thus the deformation of the deposited multilayer system under different process conditions. Also, the model is numerically realized with in-house built code. A deposition of Ag-Cu multilayer system is simulated with the as-built extended stress model, and the final residual stresses under different deposition conditions are discussed with part of the results compared with experiment from other literature.

MOCVD derived double-sided YBa_2Cu_3O_(7-δ) films on Y_2O_3 /YSZ/CeO_2 buffered textured metal substrates

We have successfully employed metal-organic chemical vapor deposition （MOCVD） technique to simultaneously deposit double-sided YBa2Cu3O7-δ （YBCO） films on both sides of YzO3/yttria-stabilized zirconia （YSZ）/CeO2 （YYC） buffered biaxially textured Ni-5 at.% W substrates, which is of great prospect to cut the production cost of YBCO coated conductors. X-ray diffraction analysis revealed that both sides of YBCO film were purely c-axis oriented and highly textured. The co-scan of （005） YBCO and Ф-scan of （103） YBCO yielded full width at half maximum （FWHM） values of 4.9° and 6.6° for one side of double-sided YBCO film, respectively, as well as 4.4° and 6.4° for the other side. The current transportation measurements performed on such double-sided 500 nm-thickness YBCO films showed the self-field critical current density （Jc） at 77 K of 0.6 MA/cm^2 and 1.2 MA/cm^2, respectively. Further research is in the process of exploring new solution to improve the Jc in practice.

Study on PECVD SiO_2 /Si_3 N_4 double-layer electrets with different thicknesses

In this paper, performance of PECVD SiO 2 /Si 3 N 4 double layers electrets with different thicknesses were investigated detailedly in respect of chargeability, storage charge stability in high temperature and reliability in high humidity environment. Samples with different thicknesses of Si 3 N 4 and SiO 2 were prepared on Pyrex 7740 glass substrates and characterized by isothermal and high humidity charge decay. The results of experiment approved that the PECVD SiO 2 /Si 3 N 4 double layers electrets on glass substrate has as good chargeability and charge stability in high temperature and high humidity environment as thermal oxidation or APCVD/LPCVD ones on silicon substrates. The experiment results indicated that a Si 3 N 4 layer no less than 50 nm is necessary for good charge stability in high temperature and a Si 3 N 4 layer thicker than 500 nm decreases the chargeability. Even a 2 nm Si 3 N 4 layer is enough to significantly improve the charge stability in high humidity environment. Thick SiO 2 layer can increase the surface potential of electrets under the same charging condition and its charge stability in high temperature. However, the electrets with high surface potential also exhibit poor uniformity of charge stability in high humidity environment.