We present a numerical gas phase reaction model for hydrogenated microcrystalline silicon(μc-Si:H) films from SiH4 and H2 gas mixtures with plasma enhanced chemical vapor deposition(PECVD).Under the typical μc-Si:H ...We present a numerical gas phase reaction model for hydrogenated microcrystalline silicon(μc-Si:H) films from SiH4 and H2 gas mixtures with plasma enhanced chemical vapor deposition(PECVD).Under the typical μc-Si:H deposition conditions,the concentrations of the species in the plasma are calculated and the effects of silane fraction(SF=[SiH4]/[H2+SiH4]) are investigated.The results show that SiH3 is the key precursor for μc-Si:H films growth,and other neutral radicals,such as Si2H5,Si2H4 and SiH2,may play some roles in the film deposition.With the silane fraction increasing,the precursor concentration increases,but H atom concentration decreases rapidly,which results in the lower H/SiH3 ratio.展开更多
基金supported by the State Key Development Program for Basic Research of China (No.2006CB202601)the National Natural Science Foundation of China (No.51007082)the Natural Science Foundation of Henan Province (No.072300410080)
文摘We present a numerical gas phase reaction model for hydrogenated microcrystalline silicon(μc-Si:H) films from SiH4 and H2 gas mixtures with plasma enhanced chemical vapor deposition(PECVD).Under the typical μc-Si:H deposition conditions,the concentrations of the species in the plasma are calculated and the effects of silane fraction(SF=[SiH4]/[H2+SiH4]) are investigated.The results show that SiH3 is the key precursor for μc-Si:H films growth,and other neutral radicals,such as Si2H5,Si2H4 and SiH2,may play some roles in the film deposition.With the silane fraction increasing,the precursor concentration increases,but H atom concentration decreases rapidly,which results in the lower H/SiH3 ratio.
