C-SiC coatings were prepared on stainless steel substrate by the middle frequency magnetron sputtering （MFMS） and ion beam mixing technique. After deposition, these samples were implanted by 5 keV hydrogen ion beam ...C-SiC coatings were prepared on stainless steel substrate by the middle frequency magnetron sputtering （MFMS） and ion beam mixing technique. After deposition, these samples were implanted by 5 keV hydrogen ion beam at a dose of 1×1018 ion/cm2. Some samples were heat treated at different temperatures from 273 K to 1173 K separately. The surface morphology, surface concentration of the elements of the C-SiC coatings and element iron from substrate as well as their depth profiles were checked with SEM, XPS and SIMS analyses. The results show that the composition of the coatings is changed due to heat treatment at different temperatures. The C-50%SiC coating with an excellent hydrogen resistant property can act as hydrogen barrier at the temperature below 723 K. But the hydrogen resistant property of the coating becomes bad when it is used at the temperature of 1023 K.展开更多
GaNs grown by hydride vapor phase epitaxy(HVPE) were irradiated by protons with different fluences.The changes of surface topography of as-grown and irradiated samples were characterized by atomic force microscopy(AFM...GaNs grown by hydride vapor phase epitaxy(HVPE) were irradiated by protons with different fluences.The changes of surface topography of as-grown and irradiated samples were characterized by atomic force microscopy(AFM).The crystal quality and optical properties of GaN films were examined by the variations of the micro-Raman and photoluminescence(PL) spectra with proton fluence.It was observed that the surface became a little more rough after irradiation.The Raman spectra indicated that the strain of materials and carrier concentration were not affected by the proton injection.The full-width at half-maximum(FWHM) of E 2 high phonon mode narrowed,which was consistent with the FWHM of PL near-band-edge emission(BE).The spectra of yellow luminescence and blue luminescence normalized to the intensity of BE demonstrated a little increase of Ga vacancy and a large decrease of O N,which may be the main reason for the change of optical properties.展开更多
基金Project(Q20122808)supported by the Department of Education of Hubei Province,ChinaProject(59781002)supported by the National Natural Science Foundation of China
文摘C-SiC coatings were prepared on stainless steel substrate by the middle frequency magnetron sputtering （MFMS） and ion beam mixing technique. After deposition, these samples were implanted by 5 keV hydrogen ion beam at a dose of 1×1018 ion/cm2. Some samples were heat treated at different temperatures from 273 K to 1173 K separately. The surface morphology, surface concentration of the elements of the C-SiC coatings and element iron from substrate as well as their depth profiles were checked with SEM, XPS and SIMS analyses. The results show that the composition of the coatings is changed due to heat treatment at different temperatures. The C-50%SiC coating with an excellent hydrogen resistant property can act as hydrogen barrier at the temperature below 723 K. But the hydrogen resistant property of the coating becomes bad when it is used at the temperature of 1023 K.
基金supported by the National Natural Science Foundation of China (Grant No. 61106106)the Fundamental Research Funds for the Central Universities (Grant No. K50510250006)
文摘GaNs grown by hydride vapor phase epitaxy(HVPE) were irradiated by protons with different fluences.The changes of surface topography of as-grown and irradiated samples were characterized by atomic force microscopy(AFM).The crystal quality and optical properties of GaN films were examined by the variations of the micro-Raman and photoluminescence(PL) spectra with proton fluence.It was observed that the surface became a little more rough after irradiation.The Raman spectra indicated that the strain of materials and carrier concentration were not affected by the proton injection.The full-width at half-maximum(FWHM) of E 2 high phonon mode narrowed,which was consistent with the FWHM of PL near-band-edge emission(BE).The spectra of yellow luminescence and blue luminescence normalized to the intensity of BE demonstrated a little increase of Ga vacancy and a large decrease of O N,which may be the main reason for the change of optical properties.
