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薄层光电晶体的研究
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作者 任鹏程 谭忠恪 罗文秀 《功能材料》 EI CAS CSCD 1995年第2期138-140,共3页
本文报导了在300~410℃下采用MOCVD技术制备多晶(非晶和微晶)薄层氧化物TiO_2(Fe_2O_3、SnO_2和In_2O_3·Sn)膜的结果,这些薄层氧化物的结构、表面形态和光电化学性质采用x-射线衍射... 本文报导了在300~410℃下采用MOCVD技术制备多晶(非晶和微晶)薄层氧化物TiO_2(Fe_2O_3、SnO_2和In_2O_3·Sn)膜的结果,这些薄层氧化物的结构、表面形态和光电化学性质采用x-射线衍射、电于显微镜和三电极方法进行描述。实验指出,这些薄层从化物适宜于作为光电极的透明导电涂层和分解水的光催化。 展开更多
关键词 薄层光电晶体 透明导电薄层氧化物 金属有机化学气相沉积
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蒸汽处理对烧结铁基零件耐蚀性的影响
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作者 郭庚辰 《材料保护》 CAS CSCD 北大核心 1989年第12期4-6,3,共3页
简述了试样密度、蒸汽处理温度与时间、冷却方式和合金化元素铜对烧结铁基零件耐腐蚀性能的影响。对蒸汽处理试样与烧结、浸油和工具钢试样的耐腐蚀性能进行了比较,蒸汽处理能提高在氯化物水溶液中的耐蚀性。
关键词 蒸汽处理 烧结铁基零件 耐蚀性 粉末冶全 氧化物薄层 耐磨性
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High-Quality Single-Layer Graphene via Reparative Reduction of Graphene Oxide 被引量:10
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作者 Boya Dai Lei Fu +4 位作者 Lei Liao Nan Liu Kai Yan Yongsheng Chen Zhongfan Liu 《Nano Research》 SCIE EI CAS CSCD 2011年第5期434-439,共6页
Reduction of graphene oxide (GO) is a promising low-cost synthetic approach to bulk graphene, which offers an accessible route to transparent conducting films and flexible electronics. Unfortunately, the release of ... Reduction of graphene oxide (GO) is a promising low-cost synthetic approach to bulk graphene, which offers an accessible route to transparent conducting films and flexible electronics. Unfortunately, the release of oxygen-containing functional groups inevitably leaves behind vacancies and topological defects on the reduced GO sheet, and its low electrical conductivity hinders the development of practical applications. Here, we present a strategy for real-time repair of the newborn vacancies with carbon radicals produced by thermal decomposition of a suitable precursor. The sheet conductivity of thus-obtained single-layer graphene was raised more than six-fold to 350-410 S/cm (whilst retaining 〉96% transparency). X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy revealed that the conductivity enhancement can be attributed to the formation of additional sp2-C structures. This method provides a simple and efficient process for obtaining highly conductive transparent graphene films. 展开更多
关键词 GRAPHENE graphene oxide reparative reduction transparent flexible electrode
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A thin-layer spectroelectrochemical study of 3,3',5,5'-tetramethylbenzidine at SnO_2:F film optically transparent electrode
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作者 JIAO Kui1, YANG Tao2 & NIU Shuyan1,2 1. College of Chemistry and Molecular Engineering, Qingdao University of Science and Technology, Qingdao 266042, China 2. College of Chemistry and Chemical Engineering, Ocean University of China, Qingdao 266003, China Correspondence should be addressed to Jiao Kui 《Science China Chemistry》 SCIE EI CAS 2004年第4期267-275,共9页
The electrooxidation of 3,3′,5,5′-tetramethylbenzidine (TMB) is dependent on the pH value of Britton-Robinson (B-R) buffer solution. In this work, the electrooxidation behavior of TMB was investigated with a SnO2:F ... The electrooxidation of 3,3′,5,5′-tetramethylbenzidine (TMB) is dependent on the pH value of Britton-Robinson (B-R) buffer solution. In this work, the electrooxidation behavior of TMB was investigated with a SnO2:F film optically transparent thin-layer spectroelectrochemical cell. TMB underwent one two-electron electrooxidation process in the pH range from 2.0 to < 4.0, and two successive one-electron electrooxidation processes in the pH range from 4.0 to < 7.0 in the B-R buffer solution. At pH 6.5, the electrooxidative product of TMB generated a subsequent chemical reaction to yield an azo compound. Several spectroelectrochemical techniques, such as thin-layer cyclic voltammetry, thin-layer cyclic voltabsorptometry, thin-layer potential-controlled electrolysis absorptometry, thin-layer single-potential-step chronoabsorptometry, thin-layer dou-ble-potential-step chronoabsorptometry, thin-layer single-potential-step open-circuit relaxation chronoabsorptometry, were applied to this investigation. The formal potential E0’ and the electron transfer number corresponding to the electrooxidation of TMB in B-R buffer solution, and the reaction rate constant of the subsequent chemical reaction were determined. 展开更多
关键词 3 3′ 5 5′-tetramethylbenzidine tin oxide film optically transparent electrode thin-layer spectroelectro-chemistry ELECTROOXIDATION
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