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氧化物镀膜材料的研究与开发 被引量:6
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作者 王建清 韩永生 +1 位作者 袁纪莲 孙蓉芳 《中国包装》 1999年第5期93-96,共4页
This paper deals with the influence of the coating material,substrate type and deposited technology on the fished product quality.Controlling optimum the conditions and method of deposited process, such as the current... This paper deals with the influence of the coating material,substrate type and deposited technology on the fished product quality.Controlling optimum the conditions and method of deposited process, such as the current and time of ionic cleaning,vacuum,pressure of reactive gas,coating rate and current of electrical beam gun, the composite film coated with oxides that permeability of oxygen and water-vapor is 2.04ml/m 2.24h,0.56g/m 2.24h respectively could be obtained. 展开更多
关键词 氧化物镀膜材料 镀膜材料 工艺 微波食品包装
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压力差对薄膜材料气体透过量测试结果的影响分析
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作者 于佳佳 陈欣 +1 位作者 高翠玲 王恬 《塑料包装》 CAS 2018年第5期44-47,共4页
为验证压差法试验的压力差是否会对材料的阻隔性能产生影响,本文利用基于压差法的测试设备在常温23℃下对PET、VMPET、KPET、SiOx-PET四种不同材质结构样品及40℃下PET样品的氧气透过量重复测试5次。结果显示所测试样品重复多次所得氧... 为验证压差法试验的压力差是否会对材料的阻隔性能产生影响,本文利用基于压差法的测试设备在常温23℃下对PET、VMPET、KPET、SiOx-PET四种不同材质结构样品及40℃下PET样品的氧气透过量重复测试5次。结果显示所测试样品重复多次所得氧气透过量的相对标准偏差均低于5%,且无规律性变化,说明现有的压差法试验所具有的0.1 MPa压力差并不会对上述材质薄膜的阻隔性产生影响。 展开更多
关键词 压力差 压差法 气体透过量 塑料薄膜 镀铝膜 K涂层薄膜 氧化物镀膜
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功率高压稳流源的设计应用 被引量:1
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作者 闵子建 刘兆龙 郑鹉 《电力电子技术》 CSCD 北大核心 2006年第3期99-101,共3页
介绍一种高压电流可调大功率稳流电路的设计方法,电路选用VMOS管作为功率器件,可实现工作电压800V以上或电流达数十安培的稳流电源,使用上限由VMOS管的最大额定值决定。电路简单可靠,可直接串联在直流供电回路中使用。该电路应用于溅射... 介绍一种高压电流可调大功率稳流电路的设计方法,电路选用VMOS管作为功率器件,可实现工作电压800V以上或电流达数十安培的稳流电源,使用上限由VMOS管的最大额定值决定。电路简单可靠,可直接串联在直流供电回路中使用。该电路应用于溅射镀膜机上,可较精确地控制多层合金膜镀层。 展开更多
关键词 稳流电源 溅射 镀膜/功率金属氧化物场效应晶体管
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Enhanced CMOS image sensor by flexible 3D nanocone anti-reflection film 被引量:2
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作者 Li Tian Xiaolei Luo +3 位作者 Min Yin Dongdong Li Xinzhong Xue Hui Wang 《Science Bulletin》 SCIE EI CAS CSCD 2017年第2期130-135,共6页
Complementary metal oxide semiconductor(CMOS) image sensors(CIS) are being widely used in digital video cameras, web cameras, digital single lens reflex camera(DSLR), smart phones and so on, owing to their high level ... Complementary metal oxide semiconductor(CMOS) image sensors(CIS) are being widely used in digital video cameras, web cameras, digital single lens reflex camera(DSLR), smart phones and so on, owing to their high level of integration, random accessibility, and low-power operation. It needs to be installed with the cover glass in practical applications to protect the sensor from damage, mechanical issues,and environmental conditions, which, however, limits the accuracy and usability of the sensor due to the reflection in the optical path from air-to-cover glass-to-air. In this work, the flexible 3D nanocone anti-reflection(AR) film with controlled aspect ratio was firstly employed to reduce the light reflection at air/cover glass/air interfaces by directly attaching onto the front and rear sides of the CIS cover glass.As both the front and rear sides of cover glass were coated by the AR film, the output image quality was found to be improved with external quantum efficiency increased by 7%, compared with that without AR film. The mean digital data value, root-mean-square contrast, and dynamic range are increased by45.14%, 38.61% and 57, respectively, for the output image with AR films. These results provide a novel and facile pathway to improve the CIS performance and also could be extended to rational design of other image sensors and optoelectronic devices. 展开更多
关键词 CMOS image sensor Nancone anti-reflection film Quantum efficiency Digital data value Root-mean-square contrast
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