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应用氧化退火法挽救脱碳层超标的轴承钢
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作者 范丽 《一重技术》 2005年第3期30-31,共2页
采用氧化退火法可消除热轧后造成的脱碳高,通过日常生产积累数据,与标准进行分析,效果较为理想。
关键词 氧化退火 轴承钢 脱碳
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碳化硅肖特基器件的氧化退火技术研究
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作者 崔严匀 袁敏杰 王训辉 《微处理机》 2020年第5期14-16,共3页
为顺应碳化硅肖特基器件制造工艺日益成熟的趋势,对作为关键工艺的氧化退火技术展开研究,优化SiC/SiO2的界面电学参数从而提升整个器件的性能。基于理论分析,探索表面晶向与掺杂浓度、氧化速率等参数的影响。通过在不同工艺条件下进行... 为顺应碳化硅肖特基器件制造工艺日益成熟的趋势,对作为关键工艺的氧化退火技术展开研究,优化SiC/SiO2的界面电学参数从而提升整个器件的性能。基于理论分析,探索表面晶向与掺杂浓度、氧化速率等参数的影响。通过在不同工艺条件下进行工艺实验,确立干-湿-干氧化条件及工艺,形成优化方案,确保得到优质氧化层。经实际检验,该方案可有效调控氧化速率,从而得到均匀、致密的氧化层以及优异的界面态密度,提升了碳化硅肖特基器件的成品率和可靠性,对碳化硅肖特基二极管的加工制备技术有重要的参考意义。 展开更多
关键词 碳化硅 氧化退火 肖特基 半导体器件
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n型4H-SiC湿氧二次氧化退火工艺与SiO_2/SiC界面研究 被引量:2
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作者 马继开 王德君 +2 位作者 朱巧智 赵亮 王海波 《北京科技大学学报》 EI CAS CSCD 北大核心 2008年第11期1282-1285,共4页
在传统氧化工艺的基础上,结合低温湿氧二次氧化退火制作4H-SiCMOS电容.通过I-V测试,结合Fowler-Nordheim(F-N)隧道电流模型分析了氧化膜质量;使用Terman法计算了SiO2/SiC界面态密度;通过XPS测试对采取不同工艺的器件界面结构进行了对比... 在传统氧化工艺的基础上,结合低温湿氧二次氧化退火制作4H-SiCMOS电容.通过I-V测试,结合Fowler-Nordheim(F-N)隧道电流模型分析了氧化膜质量;使用Terman法计算了SiO2/SiC界面态密度;通过XPS测试对采取不同工艺的器件界面结构进行了对比.在该工艺下获得的氧化膜击穿场强为10MV.cm-1,SiC/SiO2势垒高度2.46eV,同时SiO2/SiC的界面性能明显改善,界面态密度达到了1011eV-1.cm-2量级,已经达到了制作器件的可靠性要求. 展开更多
关键词 4H-SIC MOS电容 湿氧二次氧化退火 SiO2/SiC界面
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中间退火氩气稀释HCI氧化制备超薄SiO_2介质
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作者 湾福祥 章定康 黄敞 《微电子学与计算机》 CSCD 北大核心 1991年第8期44-46,共3页
本文详细分析了影响制备高质量超薄SiO_2介质的主要因素,找到了制备超薄SiO_2介质的较佳工艺,即中间退火氩气稀释氯化氢氧化法,用该方法制备的100~120(?)超薄SiO_2介质平均击穿强度达12MV/cm.
关键词 超薄二氧化硅介质 中间退火氩气稀释氯化氢氧化 半导体器件 掺杂
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钛管材电接触式退火工艺研究
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作者 羊玉兰 王双元 +3 位作者 李小刚 翁忠亮 李铁军 简宝英 《金属学报》 SCIE EI CAS CSCD 北大核心 2002年第z1期130-131,共2页
本文就电接触式快速加热、保温法对纯钛管材实施大气退火的可行性及工艺进行了尝试.实验证明,采用该方式在1-2 min内将管坯加热至700-800℃、保温1 min,可获得良好的再结晶组织与力学性能,与常规真空退火相当且满足纯钛管材国标力学性... 本文就电接触式快速加热、保温法对纯钛管材实施大气退火的可行性及工艺进行了尝试.实验证明,采用该方式在1-2 min内将管坯加热至700-800℃、保温1 min,可获得良好的再结晶组织与力学性能,与常规真空退火相当且满足纯钛管材国标力学性能要求.在所选的合理热处理参数下,快速退火后管材表面氧化轻微,对酸洗及刮修难度无影响,管材可进行较大加工量的后续加工,达到了中间及成品退火的目的.该方式可行,工艺参数合理可靠. 展开更多
关键词 钛管材 电接触式退火 氧化 组织 性能
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类电磁诱导透明效应在硅基微环谐振腔中的实现与优化 被引量:8
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作者 王永华 韦丽萍 +4 位作者 臧俊斌 崔丹凤 李艳娜 刘耀英 薛晨阳 《光子学报》 EI CAS CSCD 北大核心 2014年第2期28-32,共5页
为在硅基光波导上实现类电磁诱导透明效应,设计并加工了基于绝缘体上硅的串联双环结构.通过300℃到1 200℃热氧化退火、缓冲刻蚀液湿法腐蚀以及1 000℃高温氮气退火等波导结构的后期处理,利用垂直光栅耦合的方式输入及输出信号,观测到... 为在硅基光波导上实现类电磁诱导透明效应,设计并加工了基于绝缘体上硅的串联双环结构.通过300℃到1 200℃热氧化退火、缓冲刻蚀液湿法腐蚀以及1 000℃高温氮气退火等波导结构的后期处理,利用垂直光栅耦合的方式输入及输出信号,观测到了类电磁诱导透明效应.分析了两环间不同间距对类电磁诱导透明效应的影响,结果表明:工艺中单环Q值达到5.1×104,类电磁诱导透明效应透明峰的带宽约为500MHz. 展开更多
关键词 集成光学 硅基光波导 氧化退火 垂直光栅耦合 类电磁诱导透明 微环谐振腔 绝缘体上硅
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提高磁控管用钼丝质量研究
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作者 朱峰 吴兴刚 杨秦莉 《中国钼业》 2008年第6期50-53,共4页
论述了以φ7.4mm轧制钼杆为原料,通过增加中间退火,优化工艺参数,提高模具质量,改进加工设备,解决了φ1.54mm成品钼丝的表面和内在质量,最大程度减少钼丝的头、尾劈裂,使整根钼丝的直径公差和性能一致均匀,椭圆度得到保证。
关键词 劈裂 硬度 退火 在线氧化退火
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一种新型的6H-SiC MOS器件栅介质制备工艺 被引量:1
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作者 吴海平 徐静平 李春霞 《固体电子学研究与进展》 CAS CSCD 北大核心 2005年第1期56-59,共4页
采用干 O2 +CHCCl3(TCE)氧化并进干 /湿 NO退火工艺生长 6H-Si C MOS器件栅介质 ,研究了 Si O2 /Si C界面特性。结果表明 ,NO退火进一步降低了 Si O2 /Si C的界面态密度和边界陷阱密度 ,减小了高场应力下平带电压漂移 ,增强了器件可靠... 采用干 O2 +CHCCl3(TCE)氧化并进干 /湿 NO退火工艺生长 6H-Si C MOS器件栅介质 ,研究了 Si O2 /Si C界面特性。结果表明 ,NO退火进一步降低了 Si O2 /Si C的界面态密度和边界陷阱密度 ,减小了高场应力下平带电压漂移 ,增强了器件可靠性 ,尤其是湿 NO退火的效果更为明显。 展开更多
关键词 碳化硅 氧化退火 金属一氧化物一半导体电容 界面态密度 可靠性
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Effect of Surface-Covered Annealing on the Optical Properties of ZnO Films Grown by MOCVD
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作者 王立 蒲勇 +3 位作者 方文卿 莫春兰 熊传兵 江风益 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2006年第3期409-412,共4页
ZnO films grown by metal organic chemical vapor deposition at atmospheric pressure are annealed at 850℃ ,with the film surfaces exposed to air or covered by a sapphire wafer. The optical properties of the as-grown an... ZnO films grown by metal organic chemical vapor deposition at atmospheric pressure are annealed at 850℃ ,with the film surfaces exposed to air or covered by a sapphire wafer. The optical properties of the as-grown and the annealed samples are studied by photoluminescence (PL) spectroscopy. It is found that the air-exposure annealing effectively removes the hydrogen impurities from the ZnO films but greatly increases the deep-level emission. In the surface-covered annealed sample, an elimination of the hydrogen impurities is also observed, and the deep-level emission disappears completely. The free exciton emission is significantly enhanced in the ZnO film after surface-covered annealing. 展开更多
关键词 zinc oxide ANNEALING optical properties EXCITON
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氧等离子环境下影响多孔硅光学特性的因素 被引量:2
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作者 李平 李清山 +1 位作者 张世玉 马自侠 《激光与红外》 CAS CSCD 北大核心 2011年第7期788-792,共5页
研究了多孔硅(porous silicon,PS)在氧等离子体环境中退火温度和存储时间对PS光学稳定性的影响。通过光致发光(PL)谱和傅里叶变换红外光谱对系列样品进行分析。高斯拟合结果显示PL谱由三个高斯峰叠加而成,其中至少两个高斯峰是由非量子... 研究了多孔硅(porous silicon,PS)在氧等离子体环境中退火温度和存储时间对PS光学稳定性的影响。通过光致发光(PL)谱和傅里叶变换红外光谱对系列样品进行分析。高斯拟合结果显示PL谱由三个高斯峰叠加而成,其中至少两个高斯峰是由非量子限制效应造成的,即第一峰面积的变化与Si=O双键密切相关,第三峰面积的变化与Si-O-Si桥键以及SiHx(x=1,2)键有关;退火温度对以上两个峰的强弱变化有直接影响。 展开更多
关键词 多孔硅 快速退火氧化 非量子限制效应
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SiO_(2)/SiC界面工艺技术研究现状及新进展 被引量:2
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作者 刘佳霖 刘英坤 《半导体技术》 CAS 北大核心 2022年第5期346-353,共8页
从SiO_(2)/SiC界面工艺技术角度着重介绍了其降低界面态密度、提升沟道电子迁移率及改善SiC MOSFET性能稳定性的机理,分析了国内外研究中有关SiC材料、SiC晶面、氧化层制备工艺和氧化后退火(POA)条件对SiO_(2)/SiC界面的影响,总结了近... 从SiO_(2)/SiC界面工艺技术角度着重介绍了其降低界面态密度、提升沟道电子迁移率及改善SiC MOSFET性能稳定性的机理,分析了国内外研究中有关SiC材料、SiC晶面、氧化层制备工艺和氧化后退火(POA)条件对SiO_(2)/SiC界面的影响,总结了近年来提升SiO_(2)/SiC界面性能的研究进展。最后分析了多种降低界面态密度的工艺方法及其优缺点,指出了未来通过结合这些工艺方法进一步改善界面质量的发展方向。 展开更多
关键词 SIC 界面态密度 沟道电子迁移率 晶面选择 氧化层制备工艺 氧化退火(POA)
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Effect of annealing treatment on morphologies and gas sensing properties of ZnO nanorods
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作者 张建交 郭二军 +3 位作者 王丽萍 岳红彦 曹国剑 宋良 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2014年第3期736-742,共7页
The high-temperature stabilization of ZnO nanorods synthesized by hydrothermal treatment was investigated. The structure and morphologies of ZnO nanorods were characterized by XRD and SEM, respectively. The thermal st... The high-temperature stabilization of ZnO nanorods synthesized by hydrothermal treatment was investigated. The structure and morphologies of ZnO nanorods were characterized by XRD and SEM, respectively. The thermal stability of ZnO nanorods was also detected by thermal gravity analyzing. Thermal annealing treatment results indicate that ZnO nanorods are fundamentally stable when annealing temperature is lower than 600 ℃. When annealing temperature is beyond 600℃, the diameters of ZnO nanorods obviously decrease and the aggravating tendency of nanorods between each other also increase. Annealing treatment can greatly influence the gas sensing properties of ZnO nanorods. Comparing with ZnO nanorods without annealing treatment, the gas sensing property of ZnO nanorods to H2 with concentration of 2.5×10-6 can increase from 2.22 to 3.56. ZnO nanorods annealed at 400 ℃ exhibit optimum gas sesing property to H2 gas. 展开更多
关键词 ZnO nanorods annealing treatment gas sensing property
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利用超临界CO_2调控聚合物二元共混物的相形貌及力学性能
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作者 闫海阔 郑晓平 +2 位作者 王璠 包锦标 王市伟 《材料导报》 EI CAS CSCD 北大核心 2018年第12期2057-2061,共5页
共混物的相态结构在很大程度上决定了共混物的物理性质。本工作以超临界CO_2为溶剂,通过改变工艺来调控聚丙烯(PP)/三元乙丙橡胶(EPDM)共混物的相形貌,进而利用动态力学分析(DMA)仪研究其力学行为。结果表明,利用CO_2在PP和EPDM基体中... 共混物的相态结构在很大程度上决定了共混物的物理性质。本工作以超临界CO_2为溶剂,通过改变工艺来调控聚丙烯(PP)/三元乙丙橡胶(EPDM)共混物的相形貌,进而利用动态力学分析(DMA)仪研究其力学行为。结果表明,利用CO_2在PP和EPDM基体中较大的溶解度和溶胀度差异,在CO_2环境下退火处理PP/EPDM,可以显著增加EPDM相体积分数,进而促使EPDM相形貌从海-岛状结构向双连续结构转变。力学性能测试结果表明,在相同EPDM含量下,真空热退火后材料性能并没有发生显著变化,而经过CO_2退火后材料的储能模量和损耗模量均有提高,这意味着材料的刚性和韧性都得到提升。 展开更多
关键词 聚丙烯 三元乙丙橡胶(EPDM) 超临界 氧化退火 相形貌 力学性能
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Preparation and characterization of carbonyl iron soft magnetic composites with magnesioferrite insulating coating layer 被引量:3
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作者 Shi-geng LI Ru-tie LIU Xiang XIONG 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2020年第11期3067-3077,共11页
Spherical carbonyl iron(Fe)powders were coated with magnesioferrite(MgFe2O4)insulating coating layer and then mixed with epoxy-modified silicone resin(ESR).Soft magnetic composites(SMCs)were fabricated by compaction o... Spherical carbonyl iron(Fe)powders were coated with magnesioferrite(MgFe2O4)insulating coating layer and then mixed with epoxy-modified silicone resin(ESR).Soft magnetic composites(SMCs)were fabricated by compaction of the coated powders and annealing treatment.Transmission electron microscopy(TEM),scanning electron microscopy(SEM),energy dispersive spectroscopy(EDS),X-ray diffractometry(XRD)and X-ray photoelectron spectroscopy(XPS)revealed that the MgFe2O4 layer was coated on the surface of the iron powders.The magnetic properties of SMCs were determined using a vibrating sample magnetometer and an auto testing system for magnetic materials.The results showed that the SMCs prepared at 800 MPa and 550℃ exhibited a significant core loss of 167.5 W/kg at 100 kHz and 50 mT. 展开更多
关键词 soft magnetic composites in-situ oxidation preparation magnesioferrite insulating coating layer annealing treatment magnetic properties
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The Effects of Annealing on the Surface Properties of Titania Films Prepared on Titanium by Micro-Arc Oxidation
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作者 JIN Fanya ZHU Ming LI Jiong WANG Ke SHEN Liru TONG Honghui 《Southwestern Institute of Physics Annual Report》 2005年第1期144-146,共3页
Titanium and its alloys are widely used in the aerospace, marine, and biomedical industry due to their unique bulk properties such as high strength-to-weight ratio and melting temperature, good corrosion resistance, a... Titanium and its alloys are widely used in the aerospace, marine, and biomedical industry due to their unique bulk properties such as high strength-to-weight ratio and melting temperature, good corrosion resistance, and favorable biocom- patibility. However, in some applications, com- ponents made of titanium or titanium alloys exhibit poor wear resistance under stationary or dynamic loading as well as contact corrosion manifested by the relatively negative standard electrode potential (-1.63 V ) . In order to improve the surface properties of titanium and its alloys, several techniques such as PVD ( physical vapor deposition ) /CVD (chemical vapor deposition ) coatings, 展开更多
关键词 Micro-arc oxidation Titanium oxide film Annealing Surface properties
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Bonding enhancement of cold rolling TA1 P-Ti/AA6061 composite plates via surface oxidation treatment
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作者 Lun FU Bin YANG +2 位作者 Yun-chang GUO Chao YU Hong XIAO 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS 2024年第9期2864-2880,共17页
TA1 P-Ti/AA6061 composite plate was produced by oxidizing the surface of the titanium plate and adopting a cold roll bonding process.The results revealed that the oxide film(Ti6O)prepared on the surface of TA1 pure ti... TA1 P-Ti/AA6061 composite plate was produced by oxidizing the surface of the titanium plate and adopting a cold roll bonding process.The results revealed that the oxide film(Ti6O)prepared on the surface of TA1 pure titanium was easy to crack during the cold roll bonding,thereby promoting the formation of an effective mechanical interlock at the interface,which can effectively reduce the minimum reduction rate of the composite plates produced by cold rolling of titanium and aluminium plates.Moreover,the composite plate subjected to oxidation treatment exhibited high shear strength,particularly at a 43%reduction rate,achieving a commendable value of 117 MPa.Based on oxidation treatment and different reduction rates,the annealed composite plates at temperatures of 400,450,and 500°C displayed favorable resistance to interface delamination,highlighting their remarkable strength-plasticity compatibility as evidenced by a maximum elongation of 31.845%. 展开更多
关键词 TA1 P-Ti/AA6061 composite plate oxidation treatment annealing treatment cold roll bonding
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Investigation of structural and magnetic properties of Ni implanted rutile 被引量:2
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作者 DING BinFeng 《Science China(Physics,Mechanics & Astronomy)》 SCIE EI CAS 2012年第2期247-251,共5页
In this paper,the structural and magnetic properties of Ni metal implanted TiO 2 single crystals are discussed.Ni nanocrystals (NCs) have been formed in TiO 2 after ion implantation.Their crystalline sizes were increa... In this paper,the structural and magnetic properties of Ni metal implanted TiO 2 single crystals are discussed.Ni nanocrystals (NCs) have been formed in TiO 2 after ion implantation.Their crystalline sizes were increased with increasing post-annealing temperature.Metallic Ni NCs inside the TiO 2 matrix are stable up to an annealing temperature of 1073 K.The Ni NCs forming inside TiO 2 are the major contribution of the measured ferromagnetism. 展开更多
关键词 diluted magnetic oxides ion implantation TIO2
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Defect-related visible luminescence of ZnO nanorods annealed in oxygen ambient 被引量:5
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作者 蔡井维 徐建萍 +4 位作者 张晓松 牛喜平 邢彤焱 季婷 李岚 《Optoelectronics Letters》 EI 2012年第1期4-8,共5页
ZnO nanorods prepared by a solution-phase method are annealed at different temperatures in oxygen ambient.The luminescence properties of the samples are investigated.In the same excitation condition,the photoluminesce... ZnO nanorods prepared by a solution-phase method are annealed at different temperatures in oxygen ambient.The luminescence properties of the samples are investigated.In the same excitation condition,the photoluminescence(PL) spectra of all samples show an ultraviolet(UV) emission and a broad strong visible emission band.The asymmetric visible emis-sion band of annealed samples has a red-shift as the annealing temperature increasing from 200 ℃ to 600 ℃ and it can be deconvoluted into two subband emissions centered at 535 nm(green emission) and 611 nm(orange-red emission) by Gaussian-fitting analysis.Analyses of PL excitation(PLE) spectra and PL spectra at different excitation wavelengths reveal that the green emission and the orange-red emission have a uniform initial state,which can be attributed to the electron transition from Zn interstitial(Zni) to oxygen vacancy(Vo) and oxygen interstitial(Oi),respectively. 展开更多
关键词 Electron transitions Excited states LUMINESCENCE NANORODS OXYGEN Zinc Zinc oxide
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Implantation induced defects and electrical properties of Sb-implanted ZnO 被引量:1
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作者 XIE Hui LIU Tong +4 位作者 LIU JingMing CAO Ke Wei DONG ZhiYuan YANG Jun ZHAO YouWen 《Science China(Technological Sciences)》 SCIE EI CAS CSCD 2015年第8期1333-1338,共6页
Defects in Sb implanted Zn O single crystals have been studied by using photoluminescence(PL) spectroscopy,X-ray diffraction(XRD) and Raman scattering.Electrical properties of the samples were analyzed by Hall effect ... Defects in Sb implanted Zn O single crystals have been studied by using photoluminescence(PL) spectroscopy,X-ray diffraction(XRD) and Raman scattering.Electrical properties of the samples were analyzed by Hall effect measurement.The results indicate that the annealed Sb-implanted sample is n-type with a free electron concentration of the same amplitude as the calculated implantation concentration.The well-known oxygen vacancy related deep level green PL band is suppressed in the as-implanted sample and recovers to the level close to the as-grown Zn O single crystal after annealing.These phenomena suggest that a large portion of as-implanted Sb atoms occupy oxygen lattice site in an unstable state and move to the interstitial site,forming the complex donor defect upon high temperature annealing,resulting in n-type conduction even if the implantation dose is quite high. 展开更多
关键词 ZNO PHOTOLUMINESCENCE Ramam scattering Hall measurement ion implantation DEFECT
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Influence of annealing on the structural,optical and electrical properties of indium oxide films deposited on c-sapphire substrate
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作者 赵鸿铎 弭伟 +1 位作者 张楷亮 赵金石 《Optoelectronics Letters》 EI 2016年第1期39-42,共4页
Indium oxide(In_2O_3) films were prepared on Al_2O_3(0001) substrates at 700 °C by metal-organic chemical vapor deposition(MOCVD).Then the samples were annealed at 800 °C,900 °C and 1 000 °C,respec... Indium oxide(In_2O_3) films were prepared on Al_2O_3(0001) substrates at 700 °C by metal-organic chemical vapor deposition(MOCVD).Then the samples were annealed at 800 °C,900 °C and 1 000 °C,respectively.The X-ray diffraction(XRD) analysis reveals that the samples were polycrystalline films before and after annealing treatment.Triangle or quadrangle grains can be observed,and the corner angle of the grains becomes smooth after annealing.The highest Hall mobility is obtained for the sample annealed at 900 °C with the value about 24.74 cm^2·V^(-1)·s^(-1).The average transmittance for the films in the visible range is over 90%.The optical band gaps of the samples are about 3.73 e V,3.71 e V,3.70 eV and 3.69 eV corresponding to the In_2O_3 films deposited at 700 °C and annealed at 800 °C,900 °C and 1 000 °C,respectively. 展开更多
关键词 ANNEALING Energy gap Hall mobility INDIUM Metallorganic chemical vapor deposition Organic chemicals ORGANOMETALLICS SAPPHIRE SUBSTRATES X ray diffraction analysis
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