One-dimensional alumina photonic crystals with defect modes were successfully fabricated through inserting a constant voltage waveform into the periodic voltage signals. The trans-mission spectra show that the thickne...One-dimensional alumina photonic crystals with defect modes were successfully fabricated through inserting a constant voltage waveform into the periodic voltage signals. The trans-mission spectra show that the thickness of defects plays a key role in determining the trans-mittance of defect modes. When the thickness was ？180 nm, an obvious defect mode with the high transmittance of 55% and a narrow full width at half maximum of 18 nm was observed in the original photonic band gaps. The defect mode shifted linearly with the increasing of refractive index of the analytes infiltrated into pores, indicating its potential application in chemical sensing or bio-sensing.展开更多
Fe nanowire arrays are prepared by electrodeposition in porous anodic aluminum oxide template from a composite electrolyte solution. These nanowires have an uniform diameter of approximate 25 nm and a length in excess...Fe nanowire arrays are prepared by electrodeposition in porous anodic aluminum oxide template from a composite electrolyte solution. These nanowires have an uniform diameter of approximate 25 nm and a length in excess of 2.5 μm. The micrographs and crystal structures of Fe nanowires are studied by transmission electron microscopy (TEM), selected-area electron diffraction (SAED), and X-ray diffraction(XRD). It is found that each nanowire is essentially a single crystal and has a different orientation in each array. Hysteresis loops of Fe nanowire array show that its easy magnetization direction is perpendicular to the sample plane.展开更多
The surface of silicon was passivated by A1203 and acidify using nitric acid with SiOx as the bi-layer, it was expected that hydrogen bonding reduce interface states and negative field effect which yields maximum pass...The surface of silicon was passivated by A1203 and acidify using nitric acid with SiOx as the bi-layer, it was expected that hydrogen bonding reduce interface states and negative field effect which yields maximum passivation. By optimizing the thickness of passivation layer and annealing condition, the minority carrier lifetime of p-type single crystalline Czochralski wafer could be improved from 10 μs to 190 μs. The formation and variation of hillock defect on passivation layer was founded to be affected by the thermal annealing temperature. For the purpose of obtaining high minority carrier lifetime and low hillock defect density simultaneously, using a lower heating and cooling speed in thermal annealing process is suggested.展开更多
Four acrylamide polymer flocculants, anionic polyacrylamide P（AA-co-AM）, cationic poly- acrylamide P（DMB-co-AM）, nonionic polyacrylamide P（AM）, and hydrophobical polyacry- lamide P（OA-co-AM） have been prepared...Four acrylamide polymer flocculants, anionic polyacrylamide P（AA-co-AM）, cationic poly- acrylamide P（DMB-co-AM）, nonionic polyacrylamide P（AM）, and hydrophobical polyacry- lamide P（OA-co-AM） have been prepared by copolymerizing with acrylic acid, cationic monomer dimethylethyl （acryloxyethyl） ammonium bromide （DMB） and hydrophobical monomer octadecyl acrylate with acrylamide. The interactions between the flocculants with the （012） surface of alumina crystal （A1203） have been simulated by molecular dynamics method. All the polymers can bind tightly with A1203 crystal, the interaction between the O of polymers and A1 of the （012） surface of A1203 is significantly strong. The order of binding energy is as follows： P（DMB-co-AM）〉P（OA-co-AM）〉P（AA-co-AM）〉P（AM）, implying a better flocculation performance of P（DMB-co-AM） than the others. Analy- sis indicates that binding energy is mainly determined by Coulomb interaction. Bonds are found between the O atoms of the polymers and the A1 atoms of A1203. The poly- mers＇ structures deform when they combine with A1203 crystal, but the deformation en- ergies are low and far less than non-bonding energies. Flocculation experiments in sus- pension medium of l%Kaolin show a transmittancy of 90.8% for 6 mg/L P（DMB-co-AM） and 73.0% for P（AM）. The sequence of flocculation performance of four polymers is P（DMB-co-AM）〉P（OA-co-AM）〉P（AA-co-AM）〉P（AM）, which is in excellent agreement with the simulation results of binding energy.展开更多
Low voltage operating organic devices and circuits have been realized using atomic layer deposition deposited aluminum oxide thin film as dielectric layer. The dielectric film has per unit area capacitance of 165 nF/c...Low voltage operating organic devices and circuits have been realized using atomic layer deposition deposited aluminum oxide thin film as dielectric layer. The dielectric film has per unit area capacitance of 165 nF/cm2 and leakage current of 1 nA/cm2 at 1 MV/cm. The devices and circuits use the small-molecule hydrocarbon pentacene as the active semiconductor material. Transistors,inverters,and ring oscillators with operating voltage lower than 5 V were obtained. The mobility of organic field-effect transistors was extracted to be 0.16 cm2/Vs in saturation range,the threshold voltage is 0.3 V,and the on/off current ratio is larger than 105. The gain of inverters is estimated to be 12 at -5 V supply voltage,and the propagation delay is 0.25 ms per stage in 5-stage ring oscillators.展开更多
基金ACKNOWLEDGMENTS This work was supported by the National Basic Research Program of China （No.2012CB932303）,the National Natural Science Foundation of China （No.11074254 and No.51171176）, Hundred Talent Program of Chinese Academy of Sciences, and the President Foundation of Hefei Institute of Physical Sciences.
文摘One-dimensional alumina photonic crystals with defect modes were successfully fabricated through inserting a constant voltage waveform into the periodic voltage signals. The trans-mission spectra show that the thickness of defects plays a key role in determining the trans-mittance of defect modes. When the thickness was ？180 nm, an obvious defect mode with the high transmittance of 55% and a narrow full width at half maximum of 18 nm was observed in the original photonic band gaps. The defect mode shifted linearly with the increasing of refractive index of the analytes infiltrated into pores, indicating its potential application in chemical sensing or bio-sensing.
基金Supported by the National Natural Science Foundation of China (No. 50271046).
文摘Fe nanowire arrays are prepared by electrodeposition in porous anodic aluminum oxide template from a composite electrolyte solution. These nanowires have an uniform diameter of approximate 25 nm and a length in excess of 2.5 μm. The micrographs and crystal structures of Fe nanowires are studied by transmission electron microscopy (TEM), selected-area electron diffraction (SAED), and X-ray diffraction(XRD). It is found that each nanowire is essentially a single crystal and has a different orientation in each array. Hysteresis loops of Fe nanowire array show that its easy magnetization direction is perpendicular to the sample plane.
文摘The surface of silicon was passivated by A1203 and acidify using nitric acid with SiOx as the bi-layer, it was expected that hydrogen bonding reduce interface states and negative field effect which yields maximum passivation. By optimizing the thickness of passivation layer and annealing condition, the minority carrier lifetime of p-type single crystalline Czochralski wafer could be improved from 10 μs to 190 μs. The formation and variation of hillock defect on passivation layer was founded to be affected by the thermal annealing temperature. For the purpose of obtaining high minority carrier lifetime and low hillock defect density simultaneously, using a lower heating and cooling speed in thermal annealing process is suggested.
文摘Four acrylamide polymer flocculants, anionic polyacrylamide P（AA-co-AM）, cationic poly- acrylamide P（DMB-co-AM）, nonionic polyacrylamide P（AM）, and hydrophobical polyacry- lamide P（OA-co-AM） have been prepared by copolymerizing with acrylic acid, cationic monomer dimethylethyl （acryloxyethyl） ammonium bromide （DMB） and hydrophobical monomer octadecyl acrylate with acrylamide. The interactions between the flocculants with the （012） surface of alumina crystal （A1203） have been simulated by molecular dynamics method. All the polymers can bind tightly with A1203 crystal, the interaction between the O of polymers and A1 of the （012） surface of A1203 is significantly strong. The order of binding energy is as follows： P（DMB-co-AM）〉P（OA-co-AM）〉P（AA-co-AM）〉P（AM）, implying a better flocculation performance of P（DMB-co-AM） than the others. Analy- sis indicates that binding energy is mainly determined by Coulomb interaction. Bonds are found between the O atoms of the polymers and the A1 atoms of A1203. The poly- mers＇ structures deform when they combine with A1203 crystal, but the deformation en- ergies are low and far less than non-bonding energies. Flocculation experiments in sus- pension medium of l%Kaolin show a transmittancy of 90.8% for 6 mg/L P（DMB-co-AM） and 73.0% for P（AM）. The sequence of flocculation performance of four polymers is P（DMB-co-AM）〉P（OA-co-AM）〉P（AA-co-AM）〉P（AM）, which is in excellent agreement with the simulation results of binding energy.
基金supported by the National Basic Research Program of China ("973" Project)(Grant Nos.2009CB320302,2011CB808404)the Na-tional Natural Science Foundation of China (Grant Nos.60676001,60676008)
文摘Low voltage operating organic devices and circuits have been realized using atomic layer deposition deposited aluminum oxide thin film as dielectric layer. The dielectric film has per unit area capacitance of 165 nF/cm2 and leakage current of 1 nA/cm2 at 1 MV/cm. The devices and circuits use the small-molecule hydrocarbon pentacene as the active semiconductor material. Transistors,inverters,and ring oscillators with operating voltage lower than 5 V were obtained. The mobility of organic field-effect transistors was extracted to be 0.16 cm2/Vs in saturation range,the threshold voltage is 0.3 V,and the on/off current ratio is larger than 105. The gain of inverters is estimated to be 12 at -5 V supply voltage,and the propagation delay is 0.25 ms per stage in 5-stage ring oscillators.
