Graphite oxide(GO) was prepared by the pressurized oxidation method and incorporated into polyimide(PI) matrix to fabricate high-k composite films by in-situ polymerization and subsequent thermal treatment. The result...Graphite oxide(GO) was prepared by the pressurized oxidation method and incorporated into polyimide(PI) matrix to fabricate high-k composite films by in-situ polymerization and subsequent thermal treatment. The results show that the as-prepared GO had good dispersion and compatibility in PI matrix due to the introduction of abundant oxygen-containing functional groups during the oxidation. The residual graphitic domains and the thermal treatment induced reduction of GO further enhanced the dielectric permittivity of the resulting GO–PI composites. The dielectric permittivity of the GO–PI composites exhibited a typical percolation behavior with a percolation threshold of 0.0347 of volume ratio and a critical exponent of 0.837. Near the percolation threshold, the dielectric permittivity of the GO–PI composite increased to 108 at 10~2 Hz and was 26 times that of the pure PI.展开更多
A systematic investigation of γ radiation effects in gate SiO2 as a function of thefluorine ion implantation conditions was performed. It has been found that thegeneration of interface states and oxide trapped charge...A systematic investigation of γ radiation effects in gate SiO2 as a function of thefluorine ion implantation conditions was performed. It has been found that thegeneration of interface states and oxide trapped charges in fluorinated MOSFETsdepends strongly on implantation conditions. The action of F in oxides is theconjunction of positive and negative effects. A model by forming St--F bonds tosubstitute the other strained bonds which easily become charge traps under irradiationand to relax the bond stress on St / SiOZ interface is use'd for experimental explanation.展开更多
基金Project(2013JSJJ002)supported by the Faculty Research Fund of Central South University,China
文摘Graphite oxide(GO) was prepared by the pressurized oxidation method and incorporated into polyimide(PI) matrix to fabricate high-k composite films by in-situ polymerization and subsequent thermal treatment. The results show that the as-prepared GO had good dispersion and compatibility in PI matrix due to the introduction of abundant oxygen-containing functional groups during the oxidation. The residual graphitic domains and the thermal treatment induced reduction of GO further enhanced the dielectric permittivity of the resulting GO–PI composites. The dielectric permittivity of the GO–PI composites exhibited a typical percolation behavior with a percolation threshold of 0.0347 of volume ratio and a critical exponent of 0.837. Near the percolation threshold, the dielectric permittivity of the GO–PI composite increased to 108 at 10~2 Hz and was 26 times that of the pure PI.
文摘A systematic investigation of γ radiation effects in gate SiO2 as a function of thefluorine ion implantation conditions was performed. It has been found that thegeneration of interface states and oxide trapped charges in fluorinated MOSFETsdepends strongly on implantation conditions. The action of F in oxides is theconjunction of positive and negative effects. A model by forming St--F bonds tosubstitute the other strained bonds which easily become charge traps under irradiationand to relax the bond stress on St / SiOZ interface is use'd for experimental explanation.
