The P+ α-Si /N+ polycrystalline solar cell is molded using the AMPS-1D device simulator to explore the new high efficiency thin film poly-silicon solar cell. In order to analyze the characteristics of this device and...The P+ α-Si /N+ polycrystalline solar cell is molded using the AMPS-1D device simulator to explore the new high efficiency thin film poly-silicon solar cell. In order to analyze the characteristics of this device and the thickness of N+ poly-silicon, we consider the impurity concentration in the N+ poly-silicon layer and the work function of transparent conductive oxide (TCO) in front contact in the calculation. The thickness of N+ poly-silicon has little impact on the device when the thickness varies from 20 μm to 300 μm. The effects of impurity concentration in polycrystalline are analyzed. The conclusion is drawn that the open-circuit voltage (Voc) of P+ α-Si /N+ polycrystalline solar cell is very high, reaching 752 mV, and the conversion efficiency reaches 9.44%. Therefore, based on the above optimum parameters the study on the device formed by P+ α-Si/N+ poly-silicon is significant in exploring the high efficiency poly-silicon solar cell.展开更多
We investigated the effects of oxygen vacancies on the structural, magnetic, and transport properties of Lal-xSrxMnO3 （x=0.1, 0.2, 0.33, 0.4, and 0.5） grown around a critical point （without/with oxygen vacancies） ...We investigated the effects of oxygen vacancies on the structural, magnetic, and transport properties of Lal-xSrxMnO3 （x=0.1, 0.2, 0.33, 0.4, and 0.5） grown around a critical point （without/with oxygen vacancies） under low oxygen pressure （10 Pa） and high oxygen pressure （40 Pa）. We found that all films exhibit ferromagnetic behavior below the magnetic critical temperature, and that the films grown under low oxygen pressures have degraded magnetic properties with lower Curie temperatures and smaller magnetic moments. These results show that in epitaxial La1-xSrxMnO3 thin films, the magnetic and transport properties are very sensitive to doping concentration and oxygen vacancies. Phase diagrams of the films based on the doping concentration and oxygen vacancies were plotted and discussed.展开更多
基金supported by the Natural Science Foundation of Fujian Province of China (Grant No. A0220001)Science Research Project of Leshan Vocational & Technical College (Grant No. KY2011001)the Key Research Project in Science and Technology of Leshan (Grant No. 2011GZD050)
文摘The P+ α-Si /N+ polycrystalline solar cell is molded using the AMPS-1D device simulator to explore the new high efficiency thin film poly-silicon solar cell. In order to analyze the characteristics of this device and the thickness of N+ poly-silicon, we consider the impurity concentration in the N+ poly-silicon layer and the work function of transparent conductive oxide (TCO) in front contact in the calculation. The thickness of N+ poly-silicon has little impact on the device when the thickness varies from 20 μm to 300 μm. The effects of impurity concentration in polycrystalline are analyzed. The conclusion is drawn that the open-circuit voltage (Voc) of P+ α-Si /N+ polycrystalline solar cell is very high, reaching 752 mV, and the conversion efficiency reaches 9.44%. Therefore, based on the above optimum parameters the study on the device formed by P+ α-Si/N+ poly-silicon is significant in exploring the high efficiency poly-silicon solar cell.
基金supported by the National Key Basic Research Program of China(Grant Nos.2014CB921001,and 2013CB328706)the Key Research Program of Frontier Sciences of the Chinese Academy of Sciences(GrantNo.QYZDJ-SSW-SLH020)+1 种基金the Strategic Priority Research Program(B)of the Chinese Academy of Sciences(GrantNo.XDB07030200)the National Natural Science Foundation of China(Grant Nos.11574365,11474349,11674385,and 11404380)
文摘We investigated the effects of oxygen vacancies on the structural, magnetic, and transport properties of Lal-xSrxMnO3 （x=0.1, 0.2, 0.33, 0.4, and 0.5） grown around a critical point （without/with oxygen vacancies） under low oxygen pressure （10 Pa） and high oxygen pressure （40 Pa）. We found that all films exhibit ferromagnetic behavior below the magnetic critical temperature, and that the films grown under low oxygen pressures have degraded magnetic properties with lower Curie temperatures and smaller magnetic moments. These results show that in epitaxial La1-xSrxMnO3 thin films, the magnetic and transport properties are very sensitive to doping concentration and oxygen vacancies. Phase diagrams of the films based on the doping concentration and oxygen vacancies were plotted and discussed.
