The purpose of this work relates to study on the characteristics of ultra thin gate oxide (2 5nm thickness) and the effect of metal Al,Zr,and Ta contamination on GOI.The controlled metallic contamination experiments...The purpose of this work relates to study on the characteristics of ultra thin gate oxide (2 5nm thickness) and the effect of metal Al,Zr,and Ta contamination on GOI.The controlled metallic contamination experiments are carried out by depositing a few ppm contaminated metal and low pH solutions on the wafers.The maximum metal surface concentration is controlled at about 10 12 cm -2 level in order to simulate metal contamination during ultra clean processing.A ramped current stress for intrinsic charge to breakdown measurements with gate injection mode is used to examine the characteristics of these ultra thin gate oxides and the effect of metal contamination on GOI.It is the first time to investigate the influence of metal Zr and Ta contamination on 2 5nm ultra thin gate oxide.It is demonstrated that there is little effect of Al contamination on GOI,while Zr contamination is the most detrimental to GOI,and early breakdown has happened to wafers contaminated by Ta.展开更多
文摘The purpose of this work relates to study on the characteristics of ultra thin gate oxide (2 5nm thickness) and the effect of metal Al,Zr,and Ta contamination on GOI.The controlled metallic contamination experiments are carried out by depositing a few ppm contaminated metal and low pH solutions on the wafers.The maximum metal surface concentration is controlled at about 10 12 cm -2 level in order to simulate metal contamination during ultra clean processing.A ramped current stress for intrinsic charge to breakdown measurements with gate injection mode is used to examine the characteristics of these ultra thin gate oxides and the effect of metal contamination on GOI.It is the first time to investigate the influence of metal Zr and Ta contamination on 2 5nm ultra thin gate oxide.It is demonstrated that there is little effect of Al contamination on GOI,while Zr contamination is the most detrimental to GOI,and early breakdown has happened to wafers contaminated by Ta.
