Radiation damage in 4H-SiC samples implanted by 70 keV oxygen ion beams was studied using photoluminescence and electron spin resonance techniques. ESR peak of g = 2.0053 and two zero-phonon lines were observed with t...Radiation damage in 4H-SiC samples implanted by 70 keV oxygen ion beams was studied using photoluminescence and electron spin resonance techniques. ESR peak of g = 2.0053 and two zero-phonon lines were observed with the implanted samples. Combined with theoretical calculations, we found that the main defect in the implanted 4H-Si C samples was oxygen-vacancy complex. The calculated defect formation energies showed that the oxygen-vacancy centers were stable in n-type 4H-Si C.Moreover, the V_(Si)O_C^0 and V_(Si)O_C^(-1) centers were optically addressable. The results suggest promising spin coherence properties for quantum information science.展开更多
基金supported by the National Science Foundation of China(Nos.61076089,11505265 and 61227902)the Ministry of Education of China(SRF for ROCS,SEM)
文摘Radiation damage in 4H-SiC samples implanted by 70 keV oxygen ion beams was studied using photoluminescence and electron spin resonance techniques. ESR peak of g = 2.0053 and two zero-phonon lines were observed with the implanted samples. Combined with theoretical calculations, we found that the main defect in the implanted 4H-Si C samples was oxygen-vacancy complex. The calculated defect formation energies showed that the oxygen-vacancy centers were stable in n-type 4H-Si C.Moreover, the V_(Si)O_C^0 and V_(Si)O_C^(-1) centers were optically addressable. The results suggest promising spin coherence properties for quantum information science.
基金Supported by the National Natural Science Foundation of China under Grant No 10735070. We would like to thank Professor Ke-Ming Wang at Shandong University for helpful discussion. We also thank Dr Hong-Ji Ma and Rui Nie at Peking University for their help in ion implantation.
