Eu-doped GaOOH nanoparticles with size of 5-8 nm were prepared by hydrothermal method using sodium dodecylbenzene sulfonate （SDBS） as surfactant. Eu-doped α-Ga2O3 and β-Ga2O3 were further fabricated by annealing G...Eu-doped GaOOH nanoparticles with size of 5-8 nm were prepared by hydrothermal method using sodium dodecylbenzene sulfonate （SDBS） as surfactant. Eu-doped α-Ga2O3 and β-Ga2O3 were further fabricated by annealing GaOOH：Eu and then characterized by X-ray diffraction（XRD）, transmission electron microscopy （TEM） and photoluminescence （PL）. The TEM results show that monodisperse Eu^3＋-doped GaOOH nanoparticles form and then transform into Eu^3＋-doped a-Ga2O3 and β-Ga2O3 through annealing the GaOOH：Eu nanoparticles at 600 and 900℃, respectively. PL studies indicate that GaOOH：Eu has the highest intensity at 618 nm. Luminescence quenching is observed at higher Eu3＋concentration in all samples.展开更多
基金Project(50772133) supported by the National Natural Science Foundation of ChinaProject(LA 09014) supported by Innovation Projects for Graduates of Center South University,China
文摘Eu-doped GaOOH nanoparticles with size of 5-8 nm were prepared by hydrothermal method using sodium dodecylbenzene sulfonate （SDBS） as surfactant. Eu-doped α-Ga2O3 and β-Ga2O3 were further fabricated by annealing GaOOH：Eu and then characterized by X-ray diffraction（XRD）, transmission electron microscopy （TEM） and photoluminescence （PL）. The TEM results show that monodisperse Eu^3＋-doped GaOOH nanoparticles form and then transform into Eu^3＋-doped a-Ga2O3 and β-Ga2O3 through annealing the GaOOH：Eu nanoparticles at 600 and 900℃, respectively. PL studies indicate that GaOOH：Eu has the highest intensity at 618 nm. Luminescence quenching is observed at higher Eu3＋concentration in all samples.
