较之于传统硅器件,新出现的增强型氮化镓晶体管GaN HEMTs(gallium nitride high electron mobility transistors)具有很高的开关速度和高功率密度的特性,可以为直流变换器提供有效的改进。为了解决GaN HEMT在硬开关应用场合下的波形振...较之于传统硅器件,新出现的增强型氮化镓晶体管GaN HEMTs(gallium nitride high electron mobility transistors)具有很高的开关速度和高功率密度的特性,可以为直流变换器提供有效的改进。为了解决GaN HEMT在硬开关应用场合下的波形振荡并提高功率密度和效率,采用半桥LLC谐振变换器为本次应用的拓扑结构。以减小损耗为目的,优化了LLC的谐振参数和死区时间。在400 V输入电压、开关频率300 kHz和输出电压18 V电流12 A的测试条件下,效率达到95.59%。最后对变换器的损耗来源进行分析,损耗的理论计算值接近实际测量值,证明了方法具有一定的实用性。展开更多
When using traditional drive circuits,the enhancement-mode GaN(eGaN)HEMT will be affected by high switching speed characteristics and parasitic parameters leading to worse crosstalk problems.Currently,the existing cro...When using traditional drive circuits,the enhancement-mode GaN(eGaN)HEMT will be affected by high switching speed characteristics and parasitic parameters leading to worse crosstalk problems.Currently,the existing crosstalk suppression drive circuits often have the disadvantages of increased switching loss,control complexity,and overall electromagnetic interference(EMI).Therefore,this paper combines the driving loop impedance control and the active Miller clamp method to propose an improved active Miller clamp drive circuit.First,the crosstalk mechanism is analyzed,and the crosstalk voltage model is established.Through the crosstalk voltage evaluation platform,the influencing factors are evaluated experimentally.Then,the operating principle of the improved active Miller clamp drive circuit is discussed,and the optimized parameter design method is given.Finally,the effect of the improved active Miller clamp method for suppressing crosstalk is experimentally verified.The crosstalk voltage was suppressed from 3.5 V and-3.5 V to 1 V and-1.3 V,respectively,by the improved circuit.展开更多
基金supported by the Foundation of State Key Laboratory of Wide-Bandgap Semi-conductor Power Electronic Devices(No.2019KF001)National Natural Science Foundation of China(No.51677089)。
文摘When using traditional drive circuits,the enhancement-mode GaN(eGaN)HEMT will be affected by high switching speed characteristics and parasitic parameters leading to worse crosstalk problems.Currently,the existing crosstalk suppression drive circuits often have the disadvantages of increased switching loss,control complexity,and overall electromagnetic interference(EMI).Therefore,this paper combines the driving loop impedance control and the active Miller clamp method to propose an improved active Miller clamp drive circuit.First,the crosstalk mechanism is analyzed,and the crosstalk voltage model is established.Through the crosstalk voltage evaluation platform,the influencing factors are evaluated experimentally.Then,the operating principle of the improved active Miller clamp drive circuit is discussed,and the optimized parameter design method is given.Finally,the effect of the improved active Miller clamp method for suppressing crosstalk is experimentally verified.The crosstalk voltage was suppressed from 3.5 V and-3.5 V to 1 V and-1.3 V,respectively,by the improved circuit.
