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基于日盲紫外探测器的高压电晕在线监测系统 被引量:1
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作者 周学坤 谢云昊 +3 位作者 刘志勇 徐向华 李雁冰 薛华 《电气传动自动化》 2017年第5期45-48,共4页
探讨了在当前高压电晕探测方法中利用氮化镓紫外(日盲区波段)探测器实现实时在线电晕监测的一种方法;给出了紫外探测器的原理及技术路线;阐述了该方案需要解决的关键技术及相应措施。与其他方法及相应设备尤其是在与紫外成像仪进行比较... 探讨了在当前高压电晕探测方法中利用氮化镓紫外(日盲区波段)探测器实现实时在线电晕监测的一种方法;给出了紫外探测器的原理及技术路线;阐述了该方案需要解决的关键技术及相应措施。与其他方法及相应设备尤其是在与紫外成像仪进行比较后发现,紫外探测器在线监测系统具有明显优势。 展开更多
关键词 日盲紫外 氮化镓探测器 高压电晕 在线监测
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图形化蓝宝石衬底掺杂渐变GaN肖特基型紫外探测器 被引量:1
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作者 翟阳 牟文杰 +4 位作者 闫大为 杨国锋 蒋敏峰 肖少庆 顾晓峰 《固体电子学研究与进展》 CSCD 北大核心 2017年第2期119-123,共5页
在图形化蓝宝石衬底掺杂渐变的氮化镓(GaN)外延片上制备了肖特基型紫外探测器。与传统结构器件相比,该器件表现出显著改善的电学和光学特性:(1)室温下,当偏压为-5V时具有极低的暗电流密度~1.3×10-8 A/cm^2;(2)在零偏压情况下,紫外... 在图形化蓝宝石衬底掺杂渐变的氮化镓(GaN)外延片上制备了肖特基型紫外探测器。与传统结构器件相比,该器件表现出显著改善的电学和光学特性:(1)室温下,当偏压为-5V时具有极低的暗电流密度~1.3×10-8 A/cm^2;(2)在零偏压情况下,紫外/可见光抑制比为~4.2×10~3,最高的响应度为~0.147A/W,最大外量子效率为~50.7%,甚至在深紫外波段(250~360nm)平均量子效率也大于40%;(3)平均开启和关闭瞬态响应常数分别为115μs和120μs,基本不随偏压变化,且具有很好的热稳定性;(4)零偏压下热噪声限制的极限探测率为~5.5×10^(13)cm·Hz^(1/2)/W。 展开更多
关键词 图形化蓝宝石衬底 氮化镓肖特基型紫外探测器 光电特性 热噪声
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Plasma-assisted MBE of GaN pn-junction Grown on Si(111) Substrate
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作者 M.Z.Mohd Yusoff Z.Hassana +1 位作者 C.W.Chin H.Abu Hassan 《Chinese Journal of Chemical Physics》 SCIE CAS CSCD 2010年第4期431-436,I0001,共7页
We investigated growth of GaN pn-junction layers grown on silicon(111) by plasma-assisted molecular beam epitaxy system and its application for photo-devices. Si and Mg were used as n- and p-dopants, respectively. T... We investigated growth of GaN pn-junction layers grown on silicon(111) by plasma-assisted molecular beam epitaxy system and its application for photo-devices. Si and Mg were used as n- and p-dopants, respectively. The reflection high energy electron diffraction images indicated a good surface morphology of GaN pn-junction layer. The thickness of GaN pn- junctions layers was about 0.705 nm. The absence of cubic phase GaN showed that thiS layer possessed hexagonal structure. According to XRD symmetric rocking curve ω/2θ scans of (0002) plane at room temperature, the full width at half-maximun of GaN pn-junction sample was calculated as 0.34°, indicating a high quality layer of GaN pn-junction. Surprisingly, there was no quenching of the A1 (LO) peak, with the presence of Si- and Mg-dopants in sample. The pn-junctions sample has a good optical quality which was measured by the photoluminescence system. For photo-devices applications, Ni and A1 were used as front and back contacts, respectively. The current-voltage characteristics of the devices showed the typical rectifying behavior of heterojunction. The photo-current measurement was performed using a visible-lamp under forward and reverse biases. From the temperature-dependent measurements, the current at low bias exhibited much stronger temperature dependence and weaker field dependence. The effect of thermal annealing on front contact Ni was also carried out. The front contact Ni was annealed at 400 and 600 ℃ for 10 min in the nitrogen ambient. The results showed that 600 ℃ treated sample had a higher gain at 1.00 V/e than 400 ℃ treated and untreated samples. 展开更多
关键词 Ⅲ-nitrides GAN pn-junction Molecular beam epitaxy Photodetector
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