Cubic boron nitride(c-BN) was synthesized through benzene thermal method at a lower temperature of (300℃) by selecting liquid((C2H5)2O·)BF3 and Li3N as reactants. Hexagonal boron nitride(h-BN) and orth...Cubic boron nitride(c-BN) was synthesized through benzene thermal method at a lower temperature of (300℃) by selecting liquid((C2H5)2O·)BF3 and Li3N as reactants. Hexagonal boron nitride(h-BN) and orthorhombic boron nitride(o-BN) were also obtained. The samples were characterized by X-ray powder diffractometry and Fourier transformation infrared spectroscopy. The results show that all the BF3, BCl3 and BBr3 in the same family compounds can react with Li3N to synthesize BN since the strongest bond of B—F can be broken. Compared with BBr3, liquid (C2H5)2O·BF3 is cheaper, less toxic and more convenient to operate. Li3N not only provides nitrogen source but also has catalytic effect on accelerating the formation of c-BN at low temperature and pressure.展开更多
We have investigated the electron transport properties of a N24B24 molecule coupled to two metallic contacts with a combination of GW approximation and the non-equilibrium Green's- function technique. The calculation...We have investigated the electron transport properties of a N24B24 molecule coupled to two metallic contacts with a combination of GW approximation and the non-equilibrium Green's- function technique. The calculations indicate that the four and three resonant tunneling peaks are seen for the density of states (DOS) curves in the cases of single and multiple atomic contacts, respectively. The off state and negative differential resistance (NDR) effect are observed in the I-V characteristics of the N24B24 molecule. The NDR behavior is also observed in voltages of about 354.5, 354, 354.6, and 354.3 V for one, four, six, and eight atomic contacts. Also, the I-V characteristics of N24B24 are in off state at low voltages that is independent of the contact types. The current contact types and indicate that N24B24 molecule curves against the gate voltage depend on behaves as a semiconductor.展开更多
In this paper, we investigate the length dependence of linear and nonlinear optical properties of finite-length BN nanotubes. The recently predicted smallest BN(5,0) nanotube with configuration stabilization is sele...In this paper, we investigate the length dependence of linear and nonlinear optical properties of finite-length BN nanotubes. The recently predicted smallest BN(5,0) nanotube with configuration stabilization is selected as an example. The energy gap and optical gap show the obvious length dependence with the increase of nanotube length. When the length reaches about 24 /~, the energy gap will saturate at about 3.2 eV, which agrees well with the corrected quasi- particle energy gap. The third-order polarizabilities increase with the increase of tube length. Two-photon allowed excited states have significant contributions to the third-order polarizabilities of BN(5,0) nanotube.展开更多
Cubic boron nitride(c-BN) films were deposited on W6Mo5Cr4V2 high speed steel(HSS) substrate implanted with boron ion by RF-magnetron sputtering. The films were analyzed by the bending beam method, scratch test, XPS a...Cubic boron nitride(c-BN) films were deposited on W6Mo5Cr4V2 high speed steel(HSS) substrate implanted with boron ion by RF-magnetron sputtering. The films were analyzed by the bending beam method, scratch test, XPS and AFM. The experimental results show that the implantation of boron atom can reduce the internal stress and improve the adhesion strength of the films. The critical load of scratch test rises to 27.45 N, compared to 1.75 N of c-BN film on the unimplanted HSS. The AFM shows that the surface of the c-BN film on the implanted HSS is low in roughness and small in grain size. Then the composition of the boron implanted layer was analyzed by the XPS. And the influence of the boron implanted layer on the internal stress and adhesion strength of c-BN films were investigated.展开更多
Hexagonal boron nitride (h-BN) is often prepared by epitaxial growth on metals, and stability of the formed BN/metal interfaces in gaseous environment is a key issue for physicochemical properties of the BN overlaye...Hexagonal boron nitride (h-BN) is often prepared by epitaxial growth on metals, and stability of the formed BN/metal interfaces in gaseous environment is a key issue for physicochemical properties of the BN overlayers. As an illustration here, the structural change of a BN/Ru(0001) interface upon exposure to 02 has been investigated using in situ photoemission electron microscopy (PEEM) and ambient pressure X-ray photoelectron spectroscopy (AP-XPS). We demonstrate the occurrence of oxygen intercalation of the BN overlayers in 02 atmosphere, which decouples the BN overlayer from the substrate. Comparative studies of oxygen intercalation at BN/Ru(0001) and graphene/Ru(0001) surfaces indicate that the oxygen intercalation of BN overlayers happens more easily than graphene. This finding will be of importance for future applications of BN-based devices and materials under ambient conditions.展开更多
Excitation of surface resonance modes and presence of resonance-free hyperbolic modes are two common ways to enhance the near-field radiative energy transport, which can find wide applications in noncontact thermal ma...Excitation of surface resonance modes and presence of resonance-free hyperbolic modes are two common ways to enhance the near-field radiative energy transport, which can find wide applications in noncontact thermal management and energy harvesting.Here, we identify another way to achieve the super-Planckian thermal radiation via hyperbolic surface phonon polaritons(HSPhPs). Based on the fluctuation-dissipation theory, the near-field radiative heat flux between bulk hexagonal boron nitride(hBN) planes with the optical axis perpendicular to the radiative energy flow can be 120 times as large as the blackbody limit for a gap distance of 20 nm. When the film thickness is reduced to 10 nm, the radiative heat flux is found to increase by 26.3%.The underlying mechanism is attributed to the coupling of Type I HSPhPs inside the anisotropic hBN film, which improves the energy transmission coefficient over a broad wavevector space especially for waves with extremely high wavevectors. This work helps to deepen the understanding of near-field radiation between natural hyperbolic materials, and opens a new route to enhance the near-field thermal radiation.展开更多
In this paper,we demonstrate the conversion of graphene oxide(GO) into boron carbon oxynitride(BCNO) hybrid nanosheets via a reaction with boric acid and urea,during which the boron and nitrogen atoms are incorporated...In this paper,we demonstrate the conversion of graphene oxide(GO) into boron carbon oxynitride(BCNO) hybrid nanosheets via a reaction with boric acid and urea,during which the boron and nitrogen atoms are incorporated into graphene nanosheets.The experimental results reveal that GO is important for the photoluminescence(PL) BCNO phosphor particles.More importantly,in this system,the prepared BCNO phosphors can be used to prepare the materials needed for red light emitting diodes(LEDs).展开更多
基金Projects(2027300750372006) supported by the National Natural Science Foundation of China
文摘Cubic boron nitride(c-BN) was synthesized through benzene thermal method at a lower temperature of (300℃) by selecting liquid((C2H5)2O·)BF3 and Li3N as reactants. Hexagonal boron nitride(h-BN) and orthorhombic boron nitride(o-BN) were also obtained. The samples were characterized by X-ray powder diffractometry and Fourier transformation infrared spectroscopy. The results show that all the BF3, BCl3 and BBr3 in the same family compounds can react with Li3N to synthesize BN since the strongest bond of B—F can be broken. Compared with BBr3, liquid (C2H5)2O·BF3 is cheaper, less toxic and more convenient to operate. Li3N not only provides nitrogen source but also has catalytic effect on accelerating the formation of c-BN at low temperature and pressure.
文摘We have investigated the electron transport properties of a N24B24 molecule coupled to two metallic contacts with a combination of GW approximation and the non-equilibrium Green's- function technique. The calculations indicate that the four and three resonant tunneling peaks are seen for the density of states (DOS) curves in the cases of single and multiple atomic contacts, respectively. The off state and negative differential resistance (NDR) effect are observed in the I-V characteristics of the N24B24 molecule. The NDR behavior is also observed in voltages of about 354.5, 354, 354.6, and 354.3 V for one, four, six, and eight atomic contacts. Also, the I-V characteristics of N24B24 are in off state at low voltages that is independent of the contact types. The current contact types and indicate that N24B24 molecule curves against the gate voltage depend on behaves as a semiconductor.
基金Project supported by the National Natural Science Foundation of China (Grant Nos 20373073 and 90201015), the Science Foundation of Fujian Province, China (Grant Nos E0210028 and 2002F010), and the Foundation of State Key Laboratory of Structural Chemistry, China (Grant No 030060).
文摘In this paper, we investigate the length dependence of linear and nonlinear optical properties of finite-length BN nanotubes. The recently predicted smallest BN(5,0) nanotube with configuration stabilization is selected as an example. The energy gap and optical gap show the obvious length dependence with the increase of nanotube length. When the length reaches about 24 /~, the energy gap will saturate at about 3.2 eV, which agrees well with the corrected quasi- particle energy gap. The third-order polarizabilities increase with the increase of tube length. Two-photon allowed excited states have significant contributions to the third-order polarizabilities of BN(5,0) nanotube.
基金National Natural Science Foundation ofChina(No.59971065)
文摘Cubic boron nitride(c-BN) films were deposited on W6Mo5Cr4V2 high speed steel(HSS) substrate implanted with boron ion by RF-magnetron sputtering. The films were analyzed by the bending beam method, scratch test, XPS and AFM. The experimental results show that the implantation of boron atom can reduce the internal stress and improve the adhesion strength of the films. The critical load of scratch test rises to 27.45 N, compared to 1.75 N of c-BN film on the unimplanted HSS. The AFM shows that the surface of the c-BN film on the implanted HSS is low in roughness and small in grain size. Then the composition of the boron implanted layer was analyzed by the XPS. And the influence of the boron implanted layer on the internal stress and adhesion strength of c-BN films were investigated.
文摘Hexagonal boron nitride (h-BN) is often prepared by epitaxial growth on metals, and stability of the formed BN/metal interfaces in gaseous environment is a key issue for physicochemical properties of the BN overlayers. As an illustration here, the structural change of a BN/Ru(0001) interface upon exposure to 02 has been investigated using in situ photoemission electron microscopy (PEEM) and ambient pressure X-ray photoelectron spectroscopy (AP-XPS). We demonstrate the occurrence of oxygen intercalation of the BN overlayers in 02 atmosphere, which decouples the BN overlayer from the substrate. Comparative studies of oxygen intercalation at BN/Ru(0001) and graphene/Ru(0001) surfaces indicate that the oxygen intercalation of BN overlayers happens more easily than graphene. This finding will be of importance for future applications of BN-based devices and materials under ambient conditions.
基金the startup fund from Nanjing University of Aeronautics and Astronautics (Grant No. 90YAH16057)
文摘Excitation of surface resonance modes and presence of resonance-free hyperbolic modes are two common ways to enhance the near-field radiative energy transport, which can find wide applications in noncontact thermal management and energy harvesting.Here, we identify another way to achieve the super-Planckian thermal radiation via hyperbolic surface phonon polaritons(HSPhPs). Based on the fluctuation-dissipation theory, the near-field radiative heat flux between bulk hexagonal boron nitride(hBN) planes with the optical axis perpendicular to the radiative energy flow can be 120 times as large as the blackbody limit for a gap distance of 20 nm. When the film thickness is reduced to 10 nm, the radiative heat flux is found to increase by 26.3%.The underlying mechanism is attributed to the coupling of Type I HSPhPs inside the anisotropic hBN film, which improves the energy transmission coefficient over a broad wavevector space especially for waves with extremely high wavevectors. This work helps to deepen the understanding of near-field radiation between natural hyperbolic materials, and opens a new route to enhance the near-field thermal radiation.
基金supported by the National Natural Science Foundation of China(No.11404397)
文摘In this paper,we demonstrate the conversion of graphene oxide(GO) into boron carbon oxynitride(BCNO) hybrid nanosheets via a reaction with boric acid and urea,during which the boron and nitrogen atoms are incorporated into graphene nanosheets.The experimental results reveal that GO is important for the photoluminescence(PL) BCNO phosphor particles.More importantly,in this system,the prepared BCNO phosphors can be used to prepare the materials needed for red light emitting diodes(LEDs).