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2-氯代苯并噻唑的合成研究 被引量:3
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作者 闫丽 苏玉 董国君 《应用科技》 CAS 2002年第9期65-66,共2页
以苯并噻唑为原料 ,通过工艺研究 ,合成了生产化学除草剂苯噻草胺的中间体 2 -氯代苯并噻唑 ,分析实验结果表明 ,反应收率高 。
关键词 2-氯代苯并噻唑 苯噻草胺 合成工艺 化学除草剂 中间体 氯气氯化
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2,4-二氯苯氧乙酸合成工艺的研究进展
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作者 朱晨 李珂 +3 位作者 周密 谢锐 陈坤 徐保明 《广东化工》 CAS 2020年第9期87-88,78,共3页
2,4-二氯苯氧乙酸作为一种除草剂和植物生长调节剂,具有高效低毒,高选择性的优点,在农林业方面具有广泛的应用前景。本文综述了以有氯气氯化、无氯气氯化为划分依据的三种2,4-二氯苯氧乙酸合成工艺的研究进展,针对每种工艺的优缺点进行... 2,4-二氯苯氧乙酸作为一种除草剂和植物生长调节剂,具有高效低毒,高选择性的优点,在农林业方面具有广泛的应用前景。本文综述了以有氯气氯化、无氯气氯化为划分依据的三种2,4-二氯苯氧乙酸合成工艺的研究进展,针对每种工艺的优缺点进行了对比分析,指出未来的研究方向应围绕着无氯气氯化合成2,4-二氯苯氧乙酸的工艺来进行深入研究。 展开更多
关键词 2 4-二氯苯氧乙酸 氯气氯化 合成工艺 进展
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Cl_2/BCl_3感应耦合等离子体GaN刻蚀侧壁形貌研究
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作者 汪明刚 杨威风 +2 位作者 李超波 刘训春 夏洋 《半导体技术》 CAS CSCD 北大核心 2012年第5期367-370,共4页
基于感应耦合等离子体干法刻蚀技术,对采用Cl2/BCl3气体组分下GaN刻蚀后的侧壁形貌进行了研究。扫描电镜(SEM)结果表明,一定刻蚀条件下,刻蚀后GaN侧壁会形成转角与条纹状褶皱形貌。进一步实验,观察到了GaN侧壁转角形貌的形成过程;低偏... 基于感应耦合等离子体干法刻蚀技术,对采用Cl2/BCl3气体组分下GaN刻蚀后的侧壁形貌进行了研究。扫描电镜(SEM)结果表明,一定刻蚀条件下,刻蚀后GaN侧壁会形成转角与条纹状褶皱形貌。进一步实验,观察到了GaN侧壁转角形貌的形成过程;低偏压功率实验表明,高能离子轰击是GaN侧壁转角与条纹状褶皱形貌形成的原因。刻蚀过程中,掩蔽层光刻胶经过高能离子一段时间轰击后,其边缘首先出现条纹状褶皱形貌,并转移到GaN侧壁上,接着转角形貌亦随之出现并转移到GaN侧壁上。这与已公开发表文献认为的GaN侧壁条纹状褶皱仅由于掩蔽层边缘粗糙所引起而非刻蚀过程中形成的解释不同。 展开更多
关键词 氮化镓 干法刻蚀 氯气/氯化 感应耦合等离子体 侧壁形貌
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浅析六氯环三磷腈合成工艺 被引量:10
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作者 杨志坚 陈同明 《中国氯碱》 CAS 2003年第10期25-26,共2页
介绍了高耗氯的六氯环三磷腈的合成工艺,在比较了三氯化磷-氯化铵-氯气、五氯化磷-氯化铵、五氯化磷-氨气等工艺的特点后,认为氨气法由于产品收率高具有较好的工业化前景。
关键词 六氯环三磷腈 合成工艺 氯化磷-氯化铵-氯气 氯化磷-氯化 氯化磷-氨气 产品收率
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2—氯代丙酸的合成方法
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作者 罗贞礼 《宁夏化工》 1991年第2期6-9,共4页
本文综述了生产农药、医药的重要中间体-2-氯代丙酸的合成方法。
关键词 2-氯化丙酸 合成方法 中间体 农药 医药 氯气氯化丙烯法 氯化亚砜氯化酸法
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Effect of Boundary Layers on Polycrystalline Silicon Chemical Vapor Deposition in a Trichlorosilane and Hydrogen System 被引量:4
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作者 张攀 王伟文 +1 位作者 陈光辉 李建隆 《Chinese Journal of Chemical Engineering》 SCIE EI CAS CSCD 2011年第1期1-9,共9页
This paper presents the numerical investigation of the effects of momentum, thermal and species boundary layers on the characteristics of polycrystalline silicon deposition by comparing the deposition rates in three c... This paper presents the numerical investigation of the effects of momentum, thermal and species boundary layers on the characteristics of polycrystalline silicon deposition by comparing the deposition rates in three chemical vapor deposition (CVD) reactors. A two-dimensional model for the gas flow, heat transfer, and mass transfer was coupled to the gas-phase reaction and surface reaction mechanism for the deposition of polycrystalline silicon from trichlorosilane (TCS)-hydrogen system. The model was verified by comparing the simulated growth rate with the experimental and numerical data in the open literature. Computed results in the reactors indicate that the deposition characteristics are closely related to the momentum, thermal and mass boundary layer thickness. To yield higher deposition rate, there should be higher concentration of TCS gas on the substrate, and there should also be thinner boundary layer of HCl gas so that HCl gas could be pushed away from the surface of the substrate immediately. 展开更多
关键词 boundary layer polycrystalline silicon numerical simulation mass diffusion
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Dechlorination by combined electrochemical reduction and oxidation
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作者 丛燕青 吴祖成 谭天恩 《Journal of Zhejiang University-Science B(Biomedicine & Biotechnology)》 SCIE EI CAS CSCD 2005年第6期563-568,共6页
Chlorophenols are typical priority pollutants listed by USEPA (U.S. Environmental Protection Agency). The removal of chlorophenol could be carried out by a combination of electrochemical reduction and oxidation method... Chlorophenols are typical priority pollutants listed by USEPA (U.S. Environmental Protection Agency). The removal of chlorophenol could be carried out by a combination of electrochemical reduction and oxidation method. Results showed that it was feasible to degrade contaminants containing chlorine atoms by electrochemical reduction to form phenol, which was further degraded on the anode by electrochemical oxidation. Chlorophenol removal rate was more than 90% by the combined electro- chemical reduction and oxidation at current of 6 mA and pH 6. The hydrogen atom is a powerful reducing agent that reductively dechlorinates chlorophenols. The instantaneous current efficiency was calculated and the results indicated that cathodic reduction was the main contributor to the degradation of chlorophenol. 展开更多
关键词 Electrochemical reduction Electrochemical oxidation DECHLORINATION Combined process
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Kinetics of the Chlorination of Copper (I) Sulphide by Calcium Chloride in the Presence of Oxygen 被引量:1
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作者 Branislav R. Markovie Miroslav D. Sokie +2 位作者 Vladislav Lj. Matkovic Dragana T. Zivkovic Dragan M.Manasijevic 《Journal of Chemistry and Chemical Engineering》 2011年第3期264-268,共5页
The chemism of the chlorination of copper (I) sulphide by calcium chloride in the presence of oxygen has been determined based on the thermodynamic analysis in the Cu2S-CaCl2-O2 system as well as characterization of... The chemism of the chlorination of copper (I) sulphide by calcium chloride in the presence of oxygen has been determined based on the thermodynamic analysis in the Cu2S-CaCl2-O2 system as well as characterization of used raw materials and obtained products. The influence of temperature (from 473 to 773 K), time (from 2 to 120 min), oxygen flow (from 20 to 100 L/h) and calcium chloride quantity (from 5 to 40%) on the chlorination degree has been investigated. Kinetic analysis and the activation energy values of 20.89 kJ/mol showed that the chlorination of copper (I) sulphide by calcium chloride in the presence of oxygen is diffusion controlled. 展开更多
关键词 Chemism KINETIC CHLORINATION copper (I) sulphide calcium chloride oxygen.
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