A new process for gate dielectric fabrication named in situ steam generation （ISSG） is reported. Based on the Deal-Grove model, an oxidation mechanism is proposed to break the Si- Si bond by an active atomic O and f...A new process for gate dielectric fabrication named in situ steam generation （ISSG） is reported. Based on the Deal-Grove model, an oxidation mechanism is proposed to break the Si- Si bond by an active atomic O and form a Si- O - Si bond during the oxidation process. The breakdown characteristics are investigated through a MOS-capacitor for both ISSG and furnace wet oxidation. The gate dielectric material generated by ISSG oxidation has a superior electrical performance owing to sufficient oxidation of weak Si-Si bonds relative to furnace wet oxidation,indicating a promising application in sub-micron IC device manufacturing.展开更多
文摘A new process for gate dielectric fabrication named in situ steam generation （ISSG） is reported. Based on the Deal-Grove model, an oxidation mechanism is proposed to break the Si- Si bond by an active atomic O and form a Si- O - Si bond during the oxidation process. The breakdown characteristics are investigated through a MOS-capacitor for both ISSG and furnace wet oxidation. The gate dielectric material generated by ISSG oxidation has a superior electrical performance owing to sufficient oxidation of weak Si-Si bonds relative to furnace wet oxidation,indicating a promising application in sub-micron IC device manufacturing.
