The channel lateral pocket or halo region of NMOSFET characterized by interface state R G current of a forward gated diode has been investigated numerically for the first time.The result of numerical analysis demons...The channel lateral pocket or halo region of NMOSFET characterized by interface state R G current of a forward gated diode has been investigated numerically for the first time.The result of numerical analysis demonstrates that the effective surface doping concentration and the interface state density of the pocket or halo region are interface states R G current peak position dependent and amplitude dependent,respectively.It can be expressed quantitatively according to the device physics knowledge,thus,the direct characterization of the interface state density and the effective surface doping concentration of the pocket or halo becomes very easy.展开更多
This paper describes the drift-diffusion theory of the bipolar field-effect transistor (BiFET) with two identical and connected metal-oxide-silicon-gates (MOS-gates) on a thin-pure-base. Analytical solution is obt...This paper describes the drift-diffusion theory of the bipolar field-effect transistor (BiFET) with two identical and connected metal-oxide-silicon-gates (MOS-gates) on a thin-pure-base. Analytical solution is obtained by partitioning the two-dimensional transistor into two one-dimensional problems coupled by the parametric sur- face-electric-potential. Total and component output and transfer currents and conductances versus D. C. voltages from the drift-diffusion theory, and their deviations from the electrochemical (quasi-Fermi) potential-gradient theory,are presented over practical ranges of thicknesses of the silicon base and gate oxide. A substantial contri- bution from the longitudinal gradient of the square of the transverse electric field is shown.展开更多
基金Supported by National Natural Science Foundation of China(61501421) the National Key R&D program of China(2016YFA02005003)+2 种基金 the One Hundred Talents Program of Chinese Academy of Sciences(Y673010000) the Chinese Academy of Sciences Project(Y6JA061001) t
文摘The channel lateral pocket or halo region of NMOSFET characterized by interface state R G current of a forward gated diode has been investigated numerically for the first time.The result of numerical analysis demonstrates that the effective surface doping concentration and the interface state density of the pocket or halo region are interface states R G current peak position dependent and amplitude dependent,respectively.It can be expressed quantitatively according to the device physics knowledge,thus,the direct characterization of the interface state density and the effective surface doping concentration of the pocket or halo becomes very easy.
文摘This paper describes the drift-diffusion theory of the bipolar field-effect transistor (BiFET) with two identical and connected metal-oxide-silicon-gates (MOS-gates) on a thin-pure-base. Analytical solution is obtained by partitioning the two-dimensional transistor into two one-dimensional problems coupled by the parametric sur- face-electric-potential. Total and component output and transfer currents and conductances versus D. C. voltages from the drift-diffusion theory, and their deviations from the electrochemical (quasi-Fermi) potential-gradient theory,are presented over practical ranges of thicknesses of the silicon base and gate oxide. A substantial contri- bution from the longitudinal gradient of the square of the transverse electric field is shown.