The electrostatic discharge(ESD)protection circuit widely exists in the input and output ports of CMOS digital circuits,and fast rising time electromagnetic pulse(FREMP)coupled into the device not only interacts with ...The electrostatic discharge(ESD)protection circuit widely exists in the input and output ports of CMOS digital circuits,and fast rising time electromagnetic pulse(FREMP)coupled into the device not only interacts with the CMOS circuit,but also acts on the protection circuit.This paper establishes a model of on-chip CMOS electrostatic discharge protection circuit and selects square pulse as the FREMP signals.Based on multiple physical parameter models,it depicts the distribution of the lattice temperature,current density,and electric field intensity inside the device.At the same time,this paper explores the changes of the internal devices in the circuit under the injection of fast rising time electromagnetic pulse and describes the relationship between the damage amplitude threshold and the pulse width.The results show that the ESD protection circuit has potential damage risk,and the injection of FREMP leads to irreversible heat loss inside the circuit.In addition,pulse signals with different attributes will change the damage threshold of the circuit.These results provide an important reference for further evaluation of the influence of electromagnetic environment on the chip,which is helpful to carry out the reliability enhancement research of ESD protection circuit.展开更多
Variable supply voltage-clustered voltage scaling （VS-CVS） scheme can be very effective in reducing power consumption of CMOS circuits without degrading system performance. Level converting flip-flops （LCFFs） are ...Variable supply voltage-clustered voltage scaling （VS-CVS） scheme can be very effective in reducing power consumption of CMOS circuits without degrading system performance. Level converting flip-flops （LCFFs） are key elements in the CVS scheme. In this paper, a new explicit-pulsed double-edge triggered level converting flip-flop （nEP-DET-LCFF） is proposed, which employs double-edge triggering technique, dynamic structure, explicit pulse generator, conditional discharge technique and proper arrangement of stacked nMOS transistors to efficiently perform latching and level converting functions simultaneously. The proposed nEP-DET-LCFF combines merits of both conventional explicit-LCFFs and implicit-LCFFs. Simulation shows the proposed nEP-DET-LCFF has improvement of 19.2% -46% in delay, and 19.4% - 52.9% in power-delay product （PDP） as compared with the published LCFFs.展开更多
基金National Natural Science Foundation of China(61974116)。
文摘The electrostatic discharge(ESD)protection circuit widely exists in the input and output ports of CMOS digital circuits,and fast rising time electromagnetic pulse(FREMP)coupled into the device not only interacts with the CMOS circuit,but also acts on the protection circuit.This paper establishes a model of on-chip CMOS electrostatic discharge protection circuit and selects square pulse as the FREMP signals.Based on multiple physical parameter models,it depicts the distribution of the lattice temperature,current density,and electric field intensity inside the device.At the same time,this paper explores the changes of the internal devices in the circuit under the injection of fast rising time electromagnetic pulse and describes the relationship between the damage amplitude threshold and the pulse width.The results show that the ESD protection circuit has potential damage risk,and the injection of FREMP leads to irreversible heat loss inside the circuit.In addition,pulse signals with different attributes will change the damage threshold of the circuit.These results provide an important reference for further evaluation of the influence of electromagnetic environment on the chip,which is helpful to carry out the reliability enhancement research of ESD protection circuit.
基金Supported by the National Natural Science Foundation of China （No.60503027） Acknowledgements： The authors are grateful to Prof. Zhao PeiYi of Chapman University, Orange, USA, for beneficial discussions.
文摘Variable supply voltage-clustered voltage scaling （VS-CVS） scheme can be very effective in reducing power consumption of CMOS circuits without degrading system performance. Level converting flip-flops （LCFFs） are key elements in the CVS scheme. In this paper, a new explicit-pulsed double-edge triggered level converting flip-flop （nEP-DET-LCFF） is proposed, which employs double-edge triggering technique, dynamic structure, explicit pulse generator, conditional discharge technique and proper arrangement of stacked nMOS transistors to efficiently perform latching and level converting functions simultaneously. The proposed nEP-DET-LCFF combines merits of both conventional explicit-LCFFs and implicit-LCFFs. Simulation shows the proposed nEP-DET-LCFF has improvement of 19.2% -46% in delay, and 19.4% - 52.9% in power-delay product （PDP） as compared with the published LCFFs.
