The main factors and their varied disciplines affecting the heat transfer at the metal rheologic interface were studied from the waveguide mechanism of heat transfer of electrons and phonons, guiding the design of the...The main factors and their varied disciplines affecting the heat transfer at the metal rheologic interface were studied from the waveguide mechanism of heat transfer of electrons and phonons, guiding the design of thermal contact resistance through studying the microscale mechanism of heat transfer at the interface. The results show that electron has stronger quantum tunneling effect when the thickness of oxide film is smaller than de Broglie wavelength of electron and the heat conduction of oxide film produces microscale effect. The thickness and nature of oxide film dominate the heat transfer at the metal rheologic interface. The main means to design the interface contact conductance are to control the formation of oxide film as well as the process of machining of roller surface and lubrication of interface.展开更多
In recent years, the high density plasma in the range of 10^19～ 10^20m^-3 have been operated in large or middle tokamak device in the world. A muhichannel far infrared interferometer for profile measurement of plasma...In recent years, the high density plasma in the range of 10^19～ 10^20m^-3 have been operated in large or middle tokamak device in the world. A muhichannel far infrared interferometer for profile measurement of plasma density on HL-2A divertor tokamak is being developed, however the design of the interferometer will appear many new problem in face of experimental environment of the HL-2A divertor device, such as how to make both transmission and arrangement of optics of the interferometer, the effect of electromo- tive force on device and how about the vibration etc. According to the eight windows setting on the largest flange of the device we have to design a Michelson-type FIR laser interferometer with 8 probing channels and eight concave mirrors must be attached it to the inner wall of the vacuum vessel of the device. Therefore, there are many problems should be taken into account to resolve, for example, （ 1 ） the vibration-proof consider for muhichannel interferometer and HCN laser, （2） the stabilization and reliability of the mirror frame uum vessel, the mirrors, hanging on internal wall of vachow to prevent the sputtering to （3） the vacuum seal of the windows and the design of mobile seal for the shutter to avoid the sputter coating of plasma,展开更多
Electron spin-polarization modulation with a ferromagnetic strip of in-plane magnetization is analyzed in a hybrid ferromagnet/semiconductor filter device.The dependencies of electron spin-polarization on the strip’s...Electron spin-polarization modulation with a ferromagnetic strip of in-plane magnetization is analyzed in a hybrid ferromagnet/semiconductor filter device.The dependencies of electron spin-polarization on the strip’s magnetization strength,width and position have been systematically investigated.A novel magnetic control spin-polarization switch is proposed by inserting a ferromagnetic metal(FM)strip eccentric in relation to off the center of the spin filter,which produces the first energy level spin-polarization reversal.It is believed to be of significant importance for the realization of semiconductor spintronics multiple-value logic devices.展开更多
文摘The main factors and their varied disciplines affecting the heat transfer at the metal rheologic interface were studied from the waveguide mechanism of heat transfer of electrons and phonons, guiding the design of thermal contact resistance through studying the microscale mechanism of heat transfer at the interface. The results show that electron has stronger quantum tunneling effect when the thickness of oxide film is smaller than de Broglie wavelength of electron and the heat conduction of oxide film produces microscale effect. The thickness and nature of oxide film dominate the heat transfer at the metal rheologic interface. The main means to design the interface contact conductance are to control the formation of oxide film as well as the process of machining of roller surface and lubrication of interface.
文摘In recent years, the high density plasma in the range of 10^19～ 10^20m^-3 have been operated in large or middle tokamak device in the world. A muhichannel far infrared interferometer for profile measurement of plasma density on HL-2A divertor tokamak is being developed, however the design of the interferometer will appear many new problem in face of experimental environment of the HL-2A divertor device, such as how to make both transmission and arrangement of optics of the interferometer, the effect of electromo- tive force on device and how about the vibration etc. According to the eight windows setting on the largest flange of the device we have to design a Michelson-type FIR laser interferometer with 8 probing channels and eight concave mirrors must be attached it to the inner wall of the vacuum vessel of the device. Therefore, there are many problems should be taken into account to resolve, for example, （ 1 ） the vibration-proof consider for muhichannel interferometer and HCN laser, （2） the stabilization and reliability of the mirror frame uum vessel, the mirrors, hanging on internal wall of vachow to prevent the sputtering to （3） the vacuum seal of the windows and the design of mobile seal for the shutter to avoid the sputter coating of plasma,
基金supported by the National Basic Research Program of China(Grant No.2013CB934003)the State Key Laboratory of Software Development Environment(Grant No.SKLSDE-2013ZX-28)
文摘Electron spin-polarization modulation with a ferromagnetic strip of in-plane magnetization is analyzed in a hybrid ferromagnet/semiconductor filter device.The dependencies of electron spin-polarization on the strip’s magnetization strength,width and position have been systematically investigated.A novel magnetic control spin-polarization switch is proposed by inserting a ferromagnetic metal(FM)strip eccentric in relation to off the center of the spin filter,which produces the first energy level spin-polarization reversal.It is believed to be of significant importance for the realization of semiconductor spintronics multiple-value logic devices.
