TaNx nanoscale thin-films and Cu/TaNx multilayer structures were deposited on P-type Si(100) substrates by DC reactive magnetron sputtering. The characteristics of TaNx films and thermal stabilities of Cu/TaNx/Si syst...TaNx nanoscale thin-films and Cu/TaNx multilayer structures were deposited on P-type Si(100) substrates by DC reactive magnetron sputtering. The characteristics of TaNx films and thermal stabilities of Cu/TaNx/Si systems annealed at various temperatures were studied by four-point probe(FPP) sheet resistance measurement, atomic force microscopy(AFM), scanning electron microscope-energy dispersive spectrum (SEM-EDS), Alpha-Step IQ Profilers and X-ray diffraction(XRD), respectively. The results show that the surfaces of deposited TaNx thin-films are smooth. With the increasing of N2 partial pressure, the deposition rate and root-mean-square(RMS) decrease, while the content of N and sheet resistance of the TaNx thin-films increase, and the diffusion barrier properties of TaNx thin-films is improved. TaN1.09 can prevent interdiffusion between Cu and Si effectively after annealing up to 650 ℃ for 60 s. The failure of TaNx is mainly attributed to the formation of Cu3Si on TaN/Si interface, which results from Cu diffusion along the grain boundaries of polycrystalline TaN.展开更多
基金Project(60371046) supported by the National Natural Science Foundation of China
文摘TaNx nanoscale thin-films and Cu/TaNx multilayer structures were deposited on P-type Si(100) substrates by DC reactive magnetron sputtering. The characteristics of TaNx films and thermal stabilities of Cu/TaNx/Si systems annealed at various temperatures were studied by four-point probe(FPP) sheet resistance measurement, atomic force microscopy(AFM), scanning electron microscope-energy dispersive spectrum (SEM-EDS), Alpha-Step IQ Profilers and X-ray diffraction(XRD), respectively. The results show that the surfaces of deposited TaNx thin-films are smooth. With the increasing of N2 partial pressure, the deposition rate and root-mean-square(RMS) decrease, while the content of N and sheet resistance of the TaNx thin-films increase, and the diffusion barrier properties of TaNx thin-films is improved. TaN1.09 can prevent interdiffusion between Cu and Si effectively after annealing up to 650 ℃ for 60 s. The failure of TaNx is mainly attributed to the formation of Cu3Si on TaN/Si interface, which results from Cu diffusion along the grain boundaries of polycrystalline TaN.
