Effect of bluff internals on the hydrodynamics and lateral gas mixing was studied in a 0.186m ID high-density riser. With the bluff internals, the extremely non-uniform radial profiles of solid fraction and particle v...Effect of bluff internals on the hydrodynamics and lateral gas mixing was studied in a 0.186m ID high-density riser. With the bluff internals, the extremely non-uniform radial profiles of solid fraction and particle velocity become flat and the dense downflow layer near the wall disappears, indicating the significant enhancement of solid turbulence introduced by the internals. The fluctuation velocity and solid fraction transient signal analysis indicates a significant increase in fluctuation intensity near the wall region. The length influenced by the internals on the flow structure is about 1 meter. The lateral gas dispersion coefficient increases significantly as the bluff internals exist in the riser.展开更多
Self-diffusion coefficients of exponential-six fluids are studied using equilibrium molecular dynamics simulation technique. Mean-square displacements and velocity autocorrelation functions are used to calculate self-...Self-diffusion coefficients of exponential-six fluids are studied using equilibrium molecular dynamics simulation technique. Mean-square displacements and velocity autocorrelation functions are used to calculate self-diffusion coefficients through Einstein equation and Green-Kubo formula. It has been found that simulation results are in good agreement with experimental data for liquid argon which is taken as exponential-six fluid. The effects of density, temperature and steepness factor for repulsive part of exponential-six potential on self-diffusion coefficients are also investigated. The simulation results indicate that the self-diffusion coefficient of exponential-six fluid increases as temperature increases and density decreases. In addition, the larger self-diffusion coefficients are obtained as the steepness factor increases at the same temperature and density condition.展开更多
We study the large-time asymptotics of solutions toward the weak rarefaction wave of the quasineutral Euler system for a two-fluid plasma model in the presence of diffusions of velocity and temperature under small per...We study the large-time asymptotics of solutions toward the weak rarefaction wave of the quasineutral Euler system for a two-fluid plasma model in the presence of diffusions of velocity and temperature under small perturbations of initial data and also under an extra assumption θ_i,+/θ_e,+=θ_i,-/θ_e,-≥m_i/2m_e,namely, the ratio of the thermal speeds of ions and electrons at both far fields is not less than one half. Meanwhile,we obtain the global existence of solutions based on energy method.展开更多
This paper is devoted to the analysis of the Cauchy problem for a system of PDEs arising in radiative hydrodynamics. This system, which comes from the so-called equilibrium diffusion regime, is a variant of the usual ...This paper is devoted to the analysis of the Cauchy problem for a system of PDEs arising in radiative hydrodynamics. This system, which comes from the so-called equilibrium diffusion regime, is a variant of the usual Euler equations, where the energy and pressure functionals are modified to take into account the effect of radiation and the energy balance containing a nonlinear diffusion term acting on the temperature. The problem is studied in the multi-dimensional framework. The authors identify the existence of a strictly convex entropy and a stability property of the system, and check that the Kawashima-Shizuta condition holds. Then, based on these structure properties, the wellposedness close to a constant state can be proved by using fine energy estimates. The asymptotic decay of the solutions are also investigated.展开更多
An analytical model for the subthreshold current of a strained-Si metal-oxide-semiconductor field-effect transistor (MOSFET) is developed by solving the two-dimensional (2D) Poisson equation and the conventional drift...An analytical model for the subthreshold current of a strained-Si metal-oxide-semiconductor field-effect transistor (MOSFET) is developed by solving the two-dimensional (2D) Poisson equation and the conventional drift-diffusion theory. Model verification is carried out using the 2D device simulator ISE. Good agreement is obtained between the model's calculations and the simulated results. By analyzing the model, the dependence of current on the strained-Si layer strain, doping concentration, source/drain junction depths and substrate voltage is studied. This subthreshold current model provides valuable information for strained-Si MOSFET design.展开更多
文摘Effect of bluff internals on the hydrodynamics and lateral gas mixing was studied in a 0.186m ID high-density riser. With the bluff internals, the extremely non-uniform radial profiles of solid fraction and particle velocity become flat and the dense downflow layer near the wall disappears, indicating the significant enhancement of solid turbulence introduced by the internals. The fluctuation velocity and solid fraction transient signal analysis indicates a significant increase in fluctuation intensity near the wall region. The length influenced by the internals on the flow structure is about 1 meter. The lateral gas dispersion coefficient increases significantly as the bluff internals exist in the riser.
基金Supported by the National Natural Science Foundation of China(No.29736170).
文摘Self-diffusion coefficients of exponential-six fluids are studied using equilibrium molecular dynamics simulation technique. Mean-square displacements and velocity autocorrelation functions are used to calculate self-diffusion coefficients through Einstein equation and Green-Kubo formula. It has been found that simulation results are in good agreement with experimental data for liquid argon which is taken as exponential-six fluid. The effects of density, temperature and steepness factor for repulsive part of exponential-six potential on self-diffusion coefficients are also investigated. The simulation results indicate that the self-diffusion coefficient of exponential-six fluid increases as temperature increases and density decreases. In addition, the larger self-diffusion coefficients are obtained as the steepness factor increases at the same temperature and density condition.
基金supported by the General Research Fund from Research Grants Council of Hong Kong(Grant No.400912)National Natural Science Foundation of China(Grant Nos.11101188+1 种基金11471142and 11331005)the Program for Changjiang Scholars and Innovative Research Team in University(Grant No.IRT13066)
文摘We study the large-time asymptotics of solutions toward the weak rarefaction wave of the quasineutral Euler system for a two-fluid plasma model in the presence of diffusions of velocity and temperature under small perturbations of initial data and also under an extra assumption θ_i,+/θ_e,+=θ_i,-/θ_e,-≥m_i/2m_e,namely, the ratio of the thermal speeds of ions and electrons at both far fields is not less than one half. Meanwhile,we obtain the global existence of solutions based on energy method.
基金Project supported by the Fundamental Research Funds for the Central Universities (No. 2009B27514)the National Natural Science Foundation of China (No. 10871059)
文摘This paper is devoted to the analysis of the Cauchy problem for a system of PDEs arising in radiative hydrodynamics. This system, which comes from the so-called equilibrium diffusion regime, is a variant of the usual Euler equations, where the energy and pressure functionals are modified to take into account the effect of radiation and the energy balance containing a nonlinear diffusion term acting on the temperature. The problem is studied in the multi-dimensional framework. The authors identify the existence of a strictly convex entropy and a stability property of the system, and check that the Kawashima-Shizuta condition holds. Then, based on these structure properties, the wellposedness close to a constant state can be proved by using fine energy estimates. The asymptotic decay of the solutions are also investigated.
基金supported by the National Ministries and Commissions (Grant Nos.51308040203 and 6139801)the Fundamental Research Funds for the Central Universities (Grant Nos.72105499 and 72104089)the Natural Science Basic Research Plan in Shaanxi Province of China (Grant No.2010JQ8008)
文摘An analytical model for the subthreshold current of a strained-Si metal-oxide-semiconductor field-effect transistor (MOSFET) is developed by solving the two-dimensional (2D) Poisson equation and the conventional drift-diffusion theory. Model verification is carried out using the 2D device simulator ISE. Good agreement is obtained between the model's calculations and the simulated results. By analyzing the model, the dependence of current on the strained-Si layer strain, doping concentration, source/drain junction depths and substrate voltage is studied. This subthreshold current model provides valuable information for strained-Si MOSFET design.