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根据全毕奥特模型反演从斯通利波求流体迁移率有效值:两个典型例证
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作者 杨玉征 Pampu.,F 《国外测井技术》 1999年第2期7-14,共8页
在油气工业中,连续的渗透率剖面是有用的。由于有了高精度的数字声波仪器,就能得到高质量的斯通利流,就可以用它确定井眼附近流体迁移率的连续剖面。从斯通利波得到渗透率的精确估计值,一直是许多研究的主题,本文提出了最新处理技... 在油气工业中,连续的渗透率剖面是有用的。由于有了高精度的数字声波仪器,就能得到高质量的斯通利流,就可以用它确定井眼附近流体迁移率的连续剖面。从斯通利波得到渗透率的精确估计值,一直是许多研究的主题,本文提出了最新处理技术,它用斯通利波定量计算不同储集层的流体迁移率。 展开更多
关键词 流体迁移率 渗透 反演 模型 储集层
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根据全毕奥特模型反演从斯通利波求流体迁移率的有效值:两个典型例证
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作者 李鹤升 《测井技术信息》 1999年第2期54-60,共7页
关键词 渗透 流体迁移率 油气层物理
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The mobility improvement of organic thin film transistors by introducing Zn O-nanrods as an zctive layer
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作者 XIE Tao XIE Guang Zhong +3 位作者 DU Hong Fei YE Zong Biao SU Yuan Jie CHEN Yu Yan 《Science China(Technological Sciences)》 SCIE EI CAS CSCD 2016年第5期714-720,共7页
Organic thin film transistors(OTFTs) based on poly(3-hexylthiophene)(P3HT)/Zinc oxide(ZnO) nanorods composite films as the active layers were prepared by spray-coating process. The OTFTs with P3HT/ZnO-nanorods composi... Organic thin film transistors(OTFTs) based on poly(3-hexylthiophene)(P3HT)/Zinc oxide(ZnO) nanorods composite films as the active layers were prepared by spray-coating process. The OTFTs with P3HT/ZnO-nanorods composite films owned higher carriers mobility than the OTFT based on pure P3 HT. It can be found that the mobility of OTFTs increased by 135% due to ZnO-nanorods doping. This was attributed to the improvement of the P3 HT crystallinity and the optimization of polymer chains orientation. Meanwhile, because of the distinction of work function between P3 HT and ZnO, the majority carriers would accumulate on either side of the P3HT-ZnO interface which benefited carrier transfer. The influence on the mobility of composite film was studied. In addition, the threshold voltage of devices changed positively with the increase of ZnO-nanorods due to the decrease of electrostatic potential for P3HT/ZnO-nanorods composite films. The effect could be explained by the energy level theory of semiconductor. 展开更多
关键词 P3HT ZnO-nanorods composite film OTFT
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The effect of MWCNTs on the performance of α-sexithiophene OTFT device and its gas-sensing property
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作者 TAI HuiLing ZHANG Bo +2 位作者 DUAN ChengLi XIE GuangZhong JIANG YaDong 《Science China(Technological Sciences)》 SCIE EI CAS 2014年第6期1101-1108,共8页
In this paper,bottom contact organic thin-film transistor(OTFT)gas sensors were prepared.Silicon dioxide(SiO2)and titanium/aurum(Ti/Au)were used as the insulating layer and the electrode for the device,respectively.Th... In this paper,bottom contact organic thin-film transistor(OTFT)gas sensors were prepared.Silicon dioxide(SiO2)and titanium/aurum(Ti/Au)were used as the insulating layer and the electrode for the device,respectively.The multi-walled carbon nanotubes(MWCNTs)/α-sexithiophene(α-6T)bilayer films were used as the active layer,andα-6T single layer sensitive film was also prepared for comparison purpose.The electrical and trace NO2-sening properties of these two OTFT gas sensors were tested and analyzed.The results showed that,the OTFT device based on MWCNTs/α-6T bilayer had obviously better electrical properties,better stabilities and higher NO2-sening response values than the device withα-6T single layer,in which both the carrier mobility(μ)and on/off current ratio enhanced two order of magnitude.The improved performance of bilayer OTFT can be explained that MWCNTs acted as highly conducting bridges connecting the crystalline terraces in theα-6T film.Threshold voltage(VT),carrier mobility,on/off current ratio and grid current which showed extremely similar variation trend as source-drain current,were optional parameters to reveal the gas-sensing characteristic of OTFT gas sensors.Morphology analysis showed that the special feature of MWCNTs had certain influence on the gas-sensing properties. 展开更多
关键词 MWCNTS α-6T organic thin-film transistor(OTFT) gas sensors NO2
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