As a lead-free perovskite,CsBi3I10 has attracted significant attention because of its high thermal tolerance and long electron diffusion length.Solution-processed high-performance CsBi3I10 perovskite devices,however,a...As a lead-free perovskite,CsBi3I10 has attracted significant attention because of its high thermal tolerance and long electron diffusion length.Solution-processed high-performance CsBi3I10 perovskite devices,however,are hindered by the formation of a two-dimensional structure,which results in an extremely high surface roughness and many pinholes.In this paper,we reported a space-confined growth(SCG)method using a single-layer polystyrene(PS)sphere template to obtain high-smoothness,high-crystallinity,and dense CsBi3I10 perovskite films.Compared with traditionally spin-coated CsBi3I10 photodetectors(PDs),the metal-semiconductor-metal PDs made by SCG showed a higher photocurrent,a lower dark current,and a bigger on/off ratio.In addition,the photocurrent of our unencapsulated CsBi3I10 perovskite PDs was not attenuated under long-time illumination.In addition,when the device was stored in air for 30 d,its performance also showed no degradation,demonstrating ultra-high stability.Furthermore,the synthesis was free of antisolvents,such as chlorobenzene and toluene,which is beneficial for the environmentally friendly assembly of the devices.Our strategy opens up a new way to prepare high-quality lead-free perovskite,which may be useful for applications in light-emitting diodes and solar cells.展开更多
Regarding conventional quantum dot lightemitting diodes(QLEDs)fabricated by using the spin-coating(SC)technique,voids and interstitial spaces are inevitable due to unordered quantum dots(QDs)stacking,generating device...Regarding conventional quantum dot lightemitting diodes(QLEDs)fabricated by using the spin-coating(SC)technique,voids and interstitial spaces are inevitable due to unordered quantum dots(QDs)stacking,generating device leakage current under an external bias.In the present study,we fabricated an ultra-homogeneous and highly ordered QD monolayer by adopting the Langmuir-Blodgett(LB)technique.The QD monolayer was transferred as a emissive layer with a horizontal lifting(HL)method to a red QLED,which exhibited high performance with an external quantum efficiency(EQE)of 19.0% and lifetime(T_(95)@100 cd m^(-2))of13,324 h.When compared with the SC-based device,the EQE and lifetime were improved by 15% and 183% due to the compact and ordered QD monolayer that lowered the leakage current.Moreover,white QLEDs with stacked QD monolayers could be obtained at a low voltage of 4 V because LB technique is an organic-solvent-free approach avoiding interlayer mixing and controlling the QD layer thickness precisely.In addition,we successfully fabricated an ultra-homogeneous large-area QD monolayer on a rectangular substrate with a size of 9 cm×5 cm,indicating the promising size scalability of the LB-HL strategy.展开更多
基金the National Natural Science Foundation of China(51972101 and 11874143)the Natural Science Foundation of Hubei Province(2019CFB508)Wuhan Yellow Crane Talent Program(2017-02)。
文摘As a lead-free perovskite,CsBi3I10 has attracted significant attention because of its high thermal tolerance and long electron diffusion length.Solution-processed high-performance CsBi3I10 perovskite devices,however,are hindered by the formation of a two-dimensional structure,which results in an extremely high surface roughness and many pinholes.In this paper,we reported a space-confined growth(SCG)method using a single-layer polystyrene(PS)sphere template to obtain high-smoothness,high-crystallinity,and dense CsBi3I10 perovskite films.Compared with traditionally spin-coated CsBi3I10 photodetectors(PDs),the metal-semiconductor-metal PDs made by SCG showed a higher photocurrent,a lower dark current,and a bigger on/off ratio.In addition,the photocurrent of our unencapsulated CsBi3I10 perovskite PDs was not attenuated under long-time illumination.In addition,when the device was stored in air for 30 d,its performance also showed no degradation,demonstrating ultra-high stability.Furthermore,the synthesis was free of antisolvents,such as chlorobenzene and toluene,which is beneficial for the environmentally friendly assembly of the devices.Our strategy opens up a new way to prepare high-quality lead-free perovskite,which may be useful for applications in light-emitting diodes and solar cells.
基金supported by the National Natural Science Foundation of China(62075043)Fujian Science&Technology Innovation Laboratory for Optoelectronic Information of China(2021ZZ126)。
文摘Regarding conventional quantum dot lightemitting diodes(QLEDs)fabricated by using the spin-coating(SC)technique,voids and interstitial spaces are inevitable due to unordered quantum dots(QDs)stacking,generating device leakage current under an external bias.In the present study,we fabricated an ultra-homogeneous and highly ordered QD monolayer by adopting the Langmuir-Blodgett(LB)technique.The QD monolayer was transferred as a emissive layer with a horizontal lifting(HL)method to a red QLED,which exhibited high performance with an external quantum efficiency(EQE)of 19.0% and lifetime(T_(95)@100 cd m^(-2))of13,324 h.When compared with the SC-based device,the EQE and lifetime were improved by 15% and 183% due to the compact and ordered QD monolayer that lowered the leakage current.Moreover,white QLEDs with stacked QD monolayers could be obtained at a low voltage of 4 V because LB technique is an organic-solvent-free approach avoiding interlayer mixing and controlling the QD layer thickness precisely.In addition,we successfully fabricated an ultra-homogeneous large-area QD monolayer on a rectangular substrate with a size of 9 cm×5 cm,indicating the promising size scalability of the LB-HL strategy.
