In recent years,copper iodide(CuI)is an emerging p-type wide bandgap semiconductor with high intrinsic Hall mobility,high optical absorption and large exciton binding energy.However,the spectral response and the photo...In recent years,copper iodide(CuI)is an emerging p-type wide bandgap semiconductor with high intrinsic Hall mobility,high optical absorption and large exciton binding energy.However,the spectral response and the photoelectric conversion efficiency are limited for CuI-based heterostructure devices,which is related to the difficulty in fabrication of high-quality CuI thin films on other semiconductors.In this study,a p-CuI/n-Si photodiode has been fabricated through a facile solid-phase iodination method.Although the CuI thin film is polycrystalline with obvious structural defects,the CuI/Si diode shows a high weak-light sensitivity and a high rectification ratio of 7.6×10^(4),indicating a good defect tolerance.This is because of the unilateral heterojunction behavior of the formation of the p^(+)n diode.In this work,the mechanism of photocurrent of the p^(+)n diode has been studied comprehensively.Different monochromatic lasers with wavelengths of 400,505,635 and 780 nm have been selected for testing the photoresponse.Under zero-bias voltage,the device is a unilateral heterojunction,and only visible light can be absorbed at the Si side.On the other hand,when a bias voltage of-3 V is applied,the photodiode is switched to a broader“UV-visible”band response mode.Therefore,the detection wavelength range can be switched between the“Visible”and“UV-visible”bands by adjusting the bias voltage.Moreover,the obtained CuI/Si diode was very sensitive to weak light illumination.A very high detectivity of 10^(13)-1014 Jones can be achieved with a power density as low as 0.5μW/cm^(2),which is significantly higher than that of other Cu-based diodes.These findings underscore the high application potential of CuI when integrated with the traditional Si industry.展开更多
The performance of the photodetector is significantly impacted by the inherent surface faults in GaAs nanowires(NWs).We combined three-dimensional(3D)gallium arsenide nanowires with zero-dimensional(0D)WS_(2)quantum d...The performance of the photodetector is significantly impacted by the inherent surface faults in GaAs nanowires(NWs).We combined three-dimensional(3D)gallium arsenide nanowires with zero-dimensional(0D)WS_(2)quantum dot(QDs)materials in a simple and convenient way to form a heterogeneous structure.Various performance enhancements have been realized through the formation of typeⅡenergy bands in heterostructures,opening up new research directions for the future development of photodetector devices.This work successfully fabricated a high-sensitivity photodetector based on WS_(2)QDs/GaAs NWs heterostructure.Under 660 nm laser excitation,the photodetector exhibits a responsivity of 368.07 A/W,a detectivity of 2.7×10^(12)Jones,an external quantum efficiency of 6.47×10^(2)%,a low-noise equivalent power of 2.27×10^(-17)W·Hz-1/2,a response time of 0.3 s,and a recovery time of 2.12 s.This study provides a new solution for the preparation of high-performance GaAs detectors and promotes the development of optoelectronic devices for GaAs NWs.展开更多
Wearable devices have great application potential in the next generation of smart portable electronics,especially in the fields of medical monitoring,soft robotics,artificial intelligence,and human-machine interfaces....Wearable devices have great application potential in the next generation of smart portable electronics,especially in the fields of medical monitoring,soft robotics,artificial intelligence,and human-machine interfaces.Piezoelectric flexible strain sensors are key components of wearable devices.However,existing piezoelectric flexible strain sensors have certain limitations in weak signal monitoring due to their large modulus and low sensitivity.To solve this problem,the concept of Kirigami(paper-cutting)was introduced in this study to design the sensor structure.By comparing the Kirigami structures of different basic structures,the serpentine structure was determined as the basic configuration of the sensor.The serpentine structure not only provides excellent tensile properties,but also significantly improves the sensitivity of the sensor,which performs well in monitoring weak signals.On this basis,the adhesion properties of the flexible sensor were analyzed and tested,and the optimal ratio of the substrate was selected for preparation.In addition,a low-cost and rapid prototyping process for stretchable patches was established in this study.Using this technology,we prepared the sensor device and tested its performance.Finally,we successfully developed a flexible sensor with a sensitivity of 0.128 mV/μɛand verified its feasibility for wrist joint motion monitoring applications.This result opens up new avenues for the recovery care of tenosynovitis patients after surgery.展开更多
A wideband monolithic optoelectronic integrated receiver with a high-speed photo-detector,completely compatible with standard CMOS processes,is designed and implemented in 0.6μm standard CMOS technology.The experimen...A wideband monolithic optoelectronic integrated receiver with a high-speed photo-detector,completely compatible with standard CMOS processes,is designed and implemented in 0.6μm standard CMOS technology.The experimental results demonstrate that its performance approaches applicable requirements,where the photo-detector achieves a -3dB frequency of 1.11GHz,and the receiver achieves a 3dB bandwidth of 733MHz and a sensitivity of -9dBm for λ=850nm at BER=10-12.展开更多
A novel lateral Si 0 7 Ge 0.3 /Si p i n photodetector which is suitable for high speed operation with low voltage and at 0 7～1 1μm wavelengths is demonstrated.The fabrication of the device is carried ...A novel lateral Si 0 7 Ge 0.3 /Si p i n photodetector which is suitable for high speed operation with low voltage and at 0 7～1 1μm wavelengths is demonstrated.The fabrication of the device is carried out on a SOI substrate by using a UHV/CVD SiGe/Si heteroepitaxy technology and a CMOS/SOI process.Biased at 3 0V,the photodetector attained a responsivity of 0 38A/W at its peak response wavelength 0 93μm and exhibited extremely low dark current of less than 1nA,small parasitic capacitance of less than 1 0pF,and short rise time of 2 5ns.The distinct characteristics and process compatibility make it applicable to integrate the photodetector with other silicon based devices to meet the needs of high speed near infrared signal detections.展开更多
A novel high voltage detector that can be integrated into SPIC (Smart Power IC) is proposed.The structure is designed on the basis of normal junction terminal technique of FFLR (Floating Field Limiting Rings) system....A novel high voltage detector that can be integrated into SPIC (Smart Power IC) is proposed.The structure is designed on the basis of normal junction terminal technique of FFLR (Floating Field Limiting Rings) system.The field limiting ring as a voltage divider,is used to optimize the surface field.The voltage of main junction increases from 0 to a high value,while the utmost ring is designed to vary within a small range,which can be handled by using low voltage logic circuits.An example of 400V rings system is analyzed and simulated for this structure.The results prove that the high voltage detector can detect high voltage in SPIC.The structure can be integrated into SPIC.Besides,it is compatible with CMOS or BCD(Bipolar CMOS Dmos) technology,without any additional processes required.展开更多
基金National Natural Science Foundation of China(62074056)Fundamental Research Funds for the Central Universities。
文摘In recent years,copper iodide(CuI)is an emerging p-type wide bandgap semiconductor with high intrinsic Hall mobility,high optical absorption and large exciton binding energy.However,the spectral response and the photoelectric conversion efficiency are limited for CuI-based heterostructure devices,which is related to the difficulty in fabrication of high-quality CuI thin films on other semiconductors.In this study,a p-CuI/n-Si photodiode has been fabricated through a facile solid-phase iodination method.Although the CuI thin film is polycrystalline with obvious structural defects,the CuI/Si diode shows a high weak-light sensitivity and a high rectification ratio of 7.6×10^(4),indicating a good defect tolerance.This is because of the unilateral heterojunction behavior of the formation of the p^(+)n diode.In this work,the mechanism of photocurrent of the p^(+)n diode has been studied comprehensively.Different monochromatic lasers with wavelengths of 400,505,635 and 780 nm have been selected for testing the photoresponse.Under zero-bias voltage,the device is a unilateral heterojunction,and only visible light can be absorbed at the Si side.On the other hand,when a bias voltage of-3 V is applied,the photodiode is switched to a broader“UV-visible”band response mode.Therefore,the detection wavelength range can be switched between the“Visible”and“UV-visible”bands by adjusting the bias voltage.Moreover,the obtained CuI/Si diode was very sensitive to weak light illumination.A very high detectivity of 10^(13)-1014 Jones can be achieved with a power density as low as 0.5μW/cm^(2),which is significantly higher than that of other Cu-based diodes.These findings underscore the high application potential of CuI when integrated with the traditional Si industry.
文摘The performance of the photodetector is significantly impacted by the inherent surface faults in GaAs nanowires(NWs).We combined three-dimensional(3D)gallium arsenide nanowires with zero-dimensional(0D)WS_(2)quantum dot(QDs)materials in a simple and convenient way to form a heterogeneous structure.Various performance enhancements have been realized through the formation of typeⅡenergy bands in heterostructures,opening up new research directions for the future development of photodetector devices.This work successfully fabricated a high-sensitivity photodetector based on WS_(2)QDs/GaAs NWs heterostructure.Under 660 nm laser excitation,the photodetector exhibits a responsivity of 368.07 A/W,a detectivity of 2.7×10^(12)Jones,an external quantum efficiency of 6.47×10^(2)%,a low-noise equivalent power of 2.27×10^(-17)W·Hz-1/2,a response time of 0.3 s,and a recovery time of 2.12 s.This study provides a new solution for the preparation of high-performance GaAs detectors and promotes the development of optoelectronic devices for GaAs NWs.
基金supported by National Natural Science Foundation of China(Nos.62301509,62304209)Key Research and Development Program of Shanxi Province(No.202302030201001)Fundamental Research Program of Shanxi Province(Nos.202203021222079,0210302123203,202103021223185).
文摘Wearable devices have great application potential in the next generation of smart portable electronics,especially in the fields of medical monitoring,soft robotics,artificial intelligence,and human-machine interfaces.Piezoelectric flexible strain sensors are key components of wearable devices.However,existing piezoelectric flexible strain sensors have certain limitations in weak signal monitoring due to their large modulus and low sensitivity.To solve this problem,the concept of Kirigami(paper-cutting)was introduced in this study to design the sensor structure.By comparing the Kirigami structures of different basic structures,the serpentine structure was determined as the basic configuration of the sensor.The serpentine structure not only provides excellent tensile properties,but also significantly improves the sensitivity of the sensor,which performs well in monitoring weak signals.On this basis,the adhesion properties of the flexible sensor were analyzed and tested,and the optimal ratio of the substrate was selected for preparation.In addition,a low-cost and rapid prototyping process for stretchable patches was established in this study.Using this technology,we prepared the sensor device and tested its performance.Finally,we successfully developed a flexible sensor with a sensitivity of 0.128 mV/μɛand verified its feasibility for wrist joint motion monitoring applications.This result opens up new avenues for the recovery care of tenosynovitis patients after surgery.
文摘A wideband monolithic optoelectronic integrated receiver with a high-speed photo-detector,completely compatible with standard CMOS processes,is designed and implemented in 0.6μm standard CMOS technology.The experimental results demonstrate that its performance approaches applicable requirements,where the photo-detector achieves a -3dB frequency of 1.11GHz,and the receiver achieves a 3dB bandwidth of 733MHz and a sensitivity of -9dBm for λ=850nm at BER=10-12.
文摘A novel lateral Si 0 7 Ge 0.3 /Si p i n photodetector which is suitable for high speed operation with low voltage and at 0 7～1 1μm wavelengths is demonstrated.The fabrication of the device is carried out on a SOI substrate by using a UHV/CVD SiGe/Si heteroepitaxy technology and a CMOS/SOI process.Biased at 3 0V,the photodetector attained a responsivity of 0 38A/W at its peak response wavelength 0 93μm and exhibited extremely low dark current of less than 1nA,small parasitic capacitance of less than 1 0pF,and short rise time of 2 5ns.The distinct characteristics and process compatibility make it applicable to integrate the photodetector with other silicon based devices to meet the needs of high speed near infrared signal detections.
文摘A novel high voltage detector that can be integrated into SPIC (Smart Power IC) is proposed.The structure is designed on the basis of normal junction terminal technique of FFLR (Floating Field Limiting Rings) system.The field limiting ring as a voltage divider,is used to optimize the surface field.The voltage of main junction increases from 0 to a high value,while the utmost ring is designed to vary within a small range,which can be handled by using low voltage logic circuits.An example of 400V rings system is analyzed and simulated for this structure.The results prove that the high voltage detector can detect high voltage in SPIC.The structure can be integrated into SPIC.Besides,it is compatible with CMOS or BCD(Bipolar CMOS Dmos) technology,without any additional processes required.
